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Increasing of AlGaAs/GaAs quantum well robustness to resonant excitation by lowering Al concentration in barriers. / Solovev, I.A.; Davydov, V.G.; Kapitonov, Yu.V.; Shapochkin, P.Yu.; Efimov, Yu.P.; Lovcjus, V.A.; Eliseev, S.A.; Petrov, V.V.; Ovsyankin, V.V.

Increasing of AlGaAs/GaAs quantum well robustness to resonant excitation by lowering Al concentration in barriers. 2015. стр. 012085.

Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › Рецензирование

Harvard

Solovev, IA, Davydov, VG, Kapitonov, YV, Shapochkin, PY, Efimov, YP, Lovcjus, VA, Eliseev, SA, Petrov, VV & Ovsyankin, VV 2015, Increasing of AlGaAs/GaAs quantum well robustness to resonant excitation by lowering Al concentration in barriers. в Increasing of AlGaAs/GaAs quantum well robustness to resonant excitation by lowering Al concentration in barriers. стр. 012085. https://doi.org/10.1088/1742-6596/643/1/012085

APA

Solovev, I. A., Davydov, V. G., Kapitonov, Y. V., Shapochkin, P. Y., Efimov, Y. P., Lovcjus, V. A., Eliseev, S. A., Petrov, V. V., & Ovsyankin, V. V. (2015). Increasing of AlGaAs/GaAs quantum well robustness to resonant excitation by lowering Al concentration in barriers. в Increasing of AlGaAs/GaAs quantum well robustness to resonant excitation by lowering Al concentration in barriers (стр. 012085) https://doi.org/10.1088/1742-6596/643/1/012085

Vancouver

Solovev IA, Davydov VG, Kapitonov YV, Shapochkin PY, Efimov YP, Lovcjus VA и пр. Increasing of AlGaAs/GaAs quantum well robustness to resonant excitation by lowering Al concentration in barriers. в Increasing of AlGaAs/GaAs quantum well robustness to resonant excitation by lowering Al concentration in barriers. 2015. стр. 012085 https://doi.org/10.1088/1742-6596/643/1/012085

Author

Solovev, I.A. ; Davydov, V.G. ; Kapitonov, Yu.V. ; Shapochkin, P.Yu. ; Efimov, Yu.P. ; Lovcjus, V.A. ; Eliseev, S.A. ; Petrov, V.V. ; Ovsyankin, V.V. / Increasing of AlGaAs/GaAs quantum well robustness to resonant excitation by lowering Al concentration in barriers. Increasing of AlGaAs/GaAs quantum well robustness to resonant excitation by lowering Al concentration in barriers. 2015. стр. 012085

BibTeX

@inproceedings{4b8cf1e7119848e9836f5b2acbc58737,
title = "Increasing of AlGaAs/GaAs quantum well robustness to resonant excitation by lowering Al concentration in barriers",
abstract = "The robustness of AlGaAs/GaAs quantum well to strong resonant excitation is studied. It was found that lowering Al concentration in barriers to 3% does not influence the measured radiative linewidth of exciton resonance in the sample at low intensities. At the same time parasitic broadening of the resonance by an additional resonant illumination is strongly suppressed as compared to the quantum well with 30% of Al in barriers.",
author = "I.A. Solovev and V.G. Davydov and Yu.V. Kapitonov and P.Yu. Shapochkin and Yu.P. Efimov and V.A. Lovcjus and S.A. Eliseev and V.V. Petrov and V.V. Ovsyankin",
year = "2015",
doi = "10.1088/1742-6596/643/1/012085",
language = "English",
pages = "012085",
booktitle = "Increasing of AlGaAs/GaAs quantum well robustness to resonant excitation by lowering Al concentration in barriers",

}

RIS

TY - GEN

T1 - Increasing of AlGaAs/GaAs quantum well robustness to resonant excitation by lowering Al concentration in barriers

AU - Solovev, I.A.

AU - Davydov, V.G.

AU - Kapitonov, Yu.V.

AU - Shapochkin, P.Yu.

AU - Efimov, Yu.P.

AU - Lovcjus, V.A.

AU - Eliseev, S.A.

AU - Petrov, V.V.

AU - Ovsyankin, V.V.

PY - 2015

Y1 - 2015

N2 - The robustness of AlGaAs/GaAs quantum well to strong resonant excitation is studied. It was found that lowering Al concentration in barriers to 3% does not influence the measured radiative linewidth of exciton resonance in the sample at low intensities. At the same time parasitic broadening of the resonance by an additional resonant illumination is strongly suppressed as compared to the quantum well with 30% of Al in barriers.

AB - The robustness of AlGaAs/GaAs quantum well to strong resonant excitation is studied. It was found that lowering Al concentration in barriers to 3% does not influence the measured radiative linewidth of exciton resonance in the sample at low intensities. At the same time parasitic broadening of the resonance by an additional resonant illumination is strongly suppressed as compared to the quantum well with 30% of Al in barriers.

U2 - 10.1088/1742-6596/643/1/012085

DO - 10.1088/1742-6596/643/1/012085

M3 - Conference contribution

SP - 012085

BT - Increasing of AlGaAs/GaAs quantum well robustness to resonant excitation by lowering Al concentration in barriers

ER -

ID: 3977142