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Impurity absorption and luminescence of CuGaSe2 crystals. / Ponomareva, I. A.; Serov, A. Yu; Bodnar', I. V.

в: Physics of the Solid State, Том 49, № 1, 01.01.2007, стр. 23-27.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Ponomareva, IA, Serov, AY & Bodnar', IV 2007, 'Impurity absorption and luminescence of CuGaSe2 crystals', Physics of the Solid State, Том. 49, № 1, стр. 23-27. https://doi.org/10.1134/S1063783407010052

APA

Ponomareva, I. A., Serov, A. Y., & Bodnar', I. V. (2007). Impurity absorption and luminescence of CuGaSe2 crystals. Physics of the Solid State, 49(1), 23-27. https://doi.org/10.1134/S1063783407010052

Vancouver

Ponomareva IA, Serov AY, Bodnar' IV. Impurity absorption and luminescence of CuGaSe2 crystals. Physics of the Solid State. 2007 Янв. 1;49(1):23-27. https://doi.org/10.1134/S1063783407010052

Author

Ponomareva, I. A. ; Serov, A. Yu ; Bodnar', I. V. / Impurity absorption and luminescence of CuGaSe2 crystals. в: Physics of the Solid State. 2007 ; Том 49, № 1. стр. 23-27.

BibTeX

@article{c618f5e7409e43c883ab7979a38996c4,
title = "Impurity absorption and luminescence of CuGaSe2 crystals",
abstract = "A comparison of the experimental and calculated absorption spectra of CuGaSe2 crystals revealed the existence of two acceptor levels with ionization energies of 66 and 167 meV in the samples under study. It was found that the luminescence spectra of CuGaSe2 measured at 77 K exhibit four impurity-band transitions with impurity ionization energies of 66, 99, 136, and 190 meV. An analysis of the temperature dependence of the luminescence intensity in the temperature range 11-77 K revealed a band peaking at 1.671 eV due to the radiation of donor-acceptor pairs. The calculated sum of the ionization energies of the impurities responsible for the formation of donor-acceptor pairs and the temperature dependence of the relative intensities of impurity-band emission were used to determine the ionization energies of the corresponding donor and acceptor.",
author = "Ponomareva, {I. A.} and Serov, {A. Yu} and Bodnar', {I. V.}",
year = "2007",
month = jan,
day = "1",
doi = "10.1134/S1063783407010052",
language = "English",
volume = "49",
pages = "23--27",
journal = "Physics of the Solid State",
issn = "1063-7834",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "1",

}

RIS

TY - JOUR

T1 - Impurity absorption and luminescence of CuGaSe2 crystals

AU - Ponomareva, I. A.

AU - Serov, A. Yu

AU - Bodnar', I. V.

PY - 2007/1/1

Y1 - 2007/1/1

N2 - A comparison of the experimental and calculated absorption spectra of CuGaSe2 crystals revealed the existence of two acceptor levels with ionization energies of 66 and 167 meV in the samples under study. It was found that the luminescence spectra of CuGaSe2 measured at 77 K exhibit four impurity-band transitions with impurity ionization energies of 66, 99, 136, and 190 meV. An analysis of the temperature dependence of the luminescence intensity in the temperature range 11-77 K revealed a band peaking at 1.671 eV due to the radiation of donor-acceptor pairs. The calculated sum of the ionization energies of the impurities responsible for the formation of donor-acceptor pairs and the temperature dependence of the relative intensities of impurity-band emission were used to determine the ionization energies of the corresponding donor and acceptor.

AB - A comparison of the experimental and calculated absorption spectra of CuGaSe2 crystals revealed the existence of two acceptor levels with ionization energies of 66 and 167 meV in the samples under study. It was found that the luminescence spectra of CuGaSe2 measured at 77 K exhibit four impurity-band transitions with impurity ionization energies of 66, 99, 136, and 190 meV. An analysis of the temperature dependence of the luminescence intensity in the temperature range 11-77 K revealed a band peaking at 1.671 eV due to the radiation of donor-acceptor pairs. The calculated sum of the ionization energies of the impurities responsible for the formation of donor-acceptor pairs and the temperature dependence of the relative intensities of impurity-band emission were used to determine the ionization energies of the corresponding donor and acceptor.

UR - http://www.scopus.com/inward/record.url?scp=33846240866&partnerID=8YFLogxK

U2 - 10.1134/S1063783407010052

DO - 10.1134/S1063783407010052

M3 - Article

AN - SCOPUS:33846240866

VL - 49

SP - 23

EP - 27

JO - Physics of the Solid State

JF - Physics of the Solid State

SN - 1063-7834

IS - 1

ER -

ID: 36170656