Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Improved performance of InGaAs/GaAs microdisk lasers epi-side down bonded onto a silicon board. / Zubov, Fedor; Maximov, Mikhail; Moiseev, Eduard; Vorobyev, Alexandr; Mozharov, Alexey; Berdnikov, Yuri; Kaluzhnyy, Nikolay; Mintairov, Sergey; Kulagina, Marina; Kryzhanovskaya, Natalia; Zhukov, Alexey.
в: Optics Letters, Том 46, № 16, 15.08.2021, стр. 3853-3856.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Improved performance of InGaAs/GaAs microdisk lasers epi-side down bonded onto a silicon board
AU - Zubov, Fedor
AU - Maximov, Mikhail
AU - Moiseev, Eduard
AU - Vorobyev, Alexandr
AU - Mozharov, Alexey
AU - Berdnikov, Yuri
AU - Kaluzhnyy, Nikolay
AU - Mintairov, Sergey
AU - Kulagina, Marina
AU - Kryzhanovskaya, Natalia
AU - Zhukov, Alexey
N1 - Publisher Copyright: © 2021 Optical Society of America
PY - 2021/8/15
Y1 - 2021/8/15
N2 - We study the impact of improved heat removal on the performance of InGaAs/GaAs microdisk lasers epi-side down bonded onto a silicon substrate. Unlike the initial characteristics of microlasers on a GaAs substrate, the former’s bonding results in a decrease in thermal resistance by a factor of 2.3 (1.8) in microdisks with a diameter of 19 (31) µm, attributed to a thinner layered structure between the active region and the substrate and the better thermal conductivity of Si than GaAs. Bonded microdisk lasers show a 2.4–3.4-fold higher maximum output power, up to 21.7 mW, and an approximately 20% reduction in the threshold current. A record high 3 dB small-signal modulation bandwidth of 7.9 GHz for InGaAs/GaAs microdisk lasers is achieved.
AB - We study the impact of improved heat removal on the performance of InGaAs/GaAs microdisk lasers epi-side down bonded onto a silicon substrate. Unlike the initial characteristics of microlasers on a GaAs substrate, the former’s bonding results in a decrease in thermal resistance by a factor of 2.3 (1.8) in microdisks with a diameter of 19 (31) µm, attributed to a thinner layered structure between the active region and the substrate and the better thermal conductivity of Si than GaAs. Bonded microdisk lasers show a 2.4–3.4-fold higher maximum output power, up to 21.7 mW, and an approximately 20% reduction in the threshold current. A record high 3 dB small-signal modulation bandwidth of 7.9 GHz for InGaAs/GaAs microdisk lasers is achieved.
KW - QUANTUM-DOT LASERS
KW - MODULATION CHARACTERISTICS
KW - THRESHOLD
KW - GROWTH
UR - http://www.scopus.com/inward/record.url?scp=85111968940&partnerID=8YFLogxK
U2 - 10.1364/ol.432920
DO - 10.1364/ol.432920
M3 - Article
C2 - 34388758
AN - SCOPUS:85111968940
VL - 46
SP - 3853
EP - 3856
JO - Optics Letters
JF - Optics Letters
SN - 0146-9592
IS - 16
ER -
ID: 88772504