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Improved performance of InGaAs/GaAs microdisk lasers epi-side down bonded onto a silicon board. / Zubov, Fedor; Maximov, Mikhail; Moiseev, Eduard; Vorobyev, Alexandr; Mozharov, Alexey; Berdnikov, Yuri; Kaluzhnyy, Nikolay; Mintairov, Sergey; Kulagina, Marina; Kryzhanovskaya, Natalia; Zhukov, Alexey.

In: Optics Letters, Vol. 46, No. 16, 15.08.2021, p. 3853-3856.

Research output: Contribution to journal › Article › peer-review

Harvard

Zubov, F, Maximov, M, Moiseev, E, Vorobyev, A, Mozharov, A, Berdnikov, Y, Kaluzhnyy, N, Mintairov, S, Kulagina, M, Kryzhanovskaya, N & Zhukov, A 2021, 'Improved performance of InGaAs/GaAs microdisk lasers epi-side down bonded onto a silicon board', Optics Letters, vol. 46, no. 16, pp. 3853-3856. https://doi.org/10.1364/ol.432920

APA

Zubov, F., Maximov, M., Moiseev, E., Vorobyev, A., Mozharov, A., Berdnikov, Y., Kaluzhnyy, N., Mintairov, S., Kulagina, M., Kryzhanovskaya, N., & Zhukov, A. (2021). Improved performance of InGaAs/GaAs microdisk lasers epi-side down bonded onto a silicon board. Optics Letters, 46(16), 3853-3856. https://doi.org/10.1364/ol.432920

Vancouver

Zubov F, Maximov M, Moiseev E, Vorobyev A, Mozharov A, Berdnikov Y et al. Improved performance of InGaAs/GaAs microdisk lasers epi-side down bonded onto a silicon board. Optics Letters. 2021 Aug 15;46(16):3853-3856. https://doi.org/10.1364/ol.432920

Author

Zubov, Fedor ; Maximov, Mikhail ; Moiseev, Eduard ; Vorobyev, Alexandr ; Mozharov, Alexey ; Berdnikov, Yuri ; Kaluzhnyy, Nikolay ; Mintairov, Sergey ; Kulagina, Marina ; Kryzhanovskaya, Natalia ; Zhukov, Alexey. / Improved performance of InGaAs/GaAs microdisk lasers epi-side down bonded onto a silicon board. In: Optics Letters. 2021 ; Vol. 46, No. 16. pp. 3853-3856.

BibTeX

@article{32f80a988fcf47f0927b392e95073815,
title = "Improved performance of InGaAs/GaAs microdisk lasers epi-side down bonded onto a silicon board",
abstract = "We study the impact of improved heat removal on the performance of InGaAs/GaAs microdisk lasers epi-side down bonded onto a silicon substrate. Unlike the initial characteristics of microlasers on a GaAs substrate, the former{\textquoteright}s bonding results in a decrease in thermal resistance by a factor of 2.3 (1.8) in microdisks with a diameter of 19 (31) µm, attributed to a thinner layered structure between the active region and the substrate and the better thermal conductivity of Si than GaAs. Bonded microdisk lasers show a 2.4–3.4-fold higher maximum output power, up to 21.7 mW, and an approximately 20% reduction in the threshold current. A record high 3 dB small-signal modulation bandwidth of 7.9 GHz for InGaAs/GaAs microdisk lasers is achieved.",
keywords = "QUANTUM-DOT LASERS, MODULATION CHARACTERISTICS, THRESHOLD, GROWTH",
author = "Fedor Zubov and Mikhail Maximov and Eduard Moiseev and Alexandr Vorobyev and Alexey Mozharov and Yuri Berdnikov and Nikolay Kaluzhnyy and Sergey Mintairov and Marina Kulagina and Natalia Kryzhanovskaya and Alexey Zhukov",
note = "Publisher Copyright: {\textcopyright} 2021 Optical Society of America",
year = "2021",
month = aug,
day = "15",
doi = "10.1364/ol.432920",
language = "English",
volume = "46",
pages = "3853--3856",
journal = "Optics Letters",
issn = "0146-9592",
publisher = "American Institute of Physics",
number = "16",

}

RIS

TY - JOUR

T1 - Improved performance of InGaAs/GaAs microdisk lasers epi-side down bonded onto a silicon board

AU - Zubov, Fedor

AU - Maximov, Mikhail

AU - Moiseev, Eduard

AU - Vorobyev, Alexandr

AU - Mozharov, Alexey

AU - Berdnikov, Yuri

AU - Kaluzhnyy, Nikolay

AU - Mintairov, Sergey

AU - Kulagina, Marina

AU - Kryzhanovskaya, Natalia

AU - Zhukov, Alexey

N1 - Publisher Copyright: © 2021 Optical Society of America

PY - 2021/8/15

Y1 - 2021/8/15

N2 - We study the impact of improved heat removal on the performance of InGaAs/GaAs microdisk lasers epi-side down bonded onto a silicon substrate. Unlike the initial characteristics of microlasers on a GaAs substrate, the former’s bonding results in a decrease in thermal resistance by a factor of 2.3 (1.8) in microdisks with a diameter of 19 (31) µm, attributed to a thinner layered structure between the active region and the substrate and the better thermal conductivity of Si than GaAs. Bonded microdisk lasers show a 2.4–3.4-fold higher maximum output power, up to 21.7 mW, and an approximately 20% reduction in the threshold current. A record high 3 dB small-signal modulation bandwidth of 7.9 GHz for InGaAs/GaAs microdisk lasers is achieved.

AB - We study the impact of improved heat removal on the performance of InGaAs/GaAs microdisk lasers epi-side down bonded onto a silicon substrate. Unlike the initial characteristics of microlasers on a GaAs substrate, the former’s bonding results in a decrease in thermal resistance by a factor of 2.3 (1.8) in microdisks with a diameter of 19 (31) µm, attributed to a thinner layered structure between the active region and the substrate and the better thermal conductivity of Si than GaAs. Bonded microdisk lasers show a 2.4–3.4-fold higher maximum output power, up to 21.7 mW, and an approximately 20% reduction in the threshold current. A record high 3 dB small-signal modulation bandwidth of 7.9 GHz for InGaAs/GaAs microdisk lasers is achieved.

KW - QUANTUM-DOT LASERS

KW - MODULATION CHARACTERISTICS

KW - THRESHOLD

KW - GROWTH

UR - http://www.scopus.com/inward/record.url?scp=85111968940&partnerID=8YFLogxK

U2 - 10.1364/ol.432920

DO - 10.1364/ol.432920

M3 - Article

C2 - 34388758

AN - SCOPUS:85111968940

VL - 46

SP - 3853

EP - 3856

JO - Optics Letters

JF - Optics Letters

SN - 0146-9592

IS - 16

ER -

ID: 88772504