Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
HVPE Growth and Characterization of ϵ-Ga2O3 Films on Various Substrates. / Nikolaev, V. I.; Stepanov, S. I.; Pechnikov, A. I.; Shapenkov, S. V.; Scheglov, M. P.; Chikiryaka, A. V.; Vyvenko, O. F.
в: ECS Journal of Solid State Science and Technology, Том 9, № 4, 045014, 01.05.2020.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - HVPE Growth and Characterization of ϵ-Ga2O3 Films on Various Substrates
AU - Nikolaev, V. I.
AU - Stepanov, S. I.
AU - Pechnikov, A. I.
AU - Shapenkov, S. V.
AU - Scheglov, M. P.
AU - Chikiryaka, A. V.
AU - Vyvenko, O. F.
N1 - Publisher Copyright: © 2020 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2020/5/1
Y1 - 2020/5/1
N2 - In this study we compare the growth of gallium oxide films by halide vapor phase epitaxy (HVPE) on various substrates under the same growth conditions. Gallium oxide films were deposited at 500 C-600 C on basal plane (0001) planar and patterned sapphire substrates, (0001) 2H-GaN, 4H-SiC, and bulk β-Ga2O3 substrates. The layers were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and cathodoluminescence (CL) techniques. Most of the films exhibit growth features of hexagonal symmetry. Sn-doped Ga2O3 films exhibit n-type electrical conductivity. Heterojunctions composed of n-type hexagonal Ga2O3:Sn and p-type GaN:Mg demonstrate diode-like I-V characteristics and emit light under forward bias.
AB - In this study we compare the growth of gallium oxide films by halide vapor phase epitaxy (HVPE) on various substrates under the same growth conditions. Gallium oxide films were deposited at 500 C-600 C on basal plane (0001) planar and patterned sapphire substrates, (0001) 2H-GaN, 4H-SiC, and bulk β-Ga2O3 substrates. The layers were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and cathodoluminescence (CL) techniques. Most of the films exhibit growth features of hexagonal symmetry. Sn-doped Ga2O3 films exhibit n-type electrical conductivity. Heterojunctions composed of n-type hexagonal Ga2O3:Sn and p-type GaN:Mg demonstrate diode-like I-V characteristics and emit light under forward bias.
KW - Ga2O3
KW - gallium oxide
KW - CVD
KW - Chemical Vapor Deposition
KW - CHEMICAL-VAPOR-DEPOSITION
KW - GALLIUM OXIDE
KW - THIN-FILMS
KW - HETEROEPITAXIAL GROWTH
KW - PLANE SAPPHIRE
KW - C-PLANE
KW - ALPHA
KW - BETA
KW - PHASES
KW - SN
UR - http://www.scopus.com/inward/record.url?scp=85085273152&partnerID=8YFLogxK
UR - https://www.mendeley.com/catalogue/cf4d6a94-49d0-385e-816d-d62acb700b73/
U2 - 10.1149/2162-8777/ab8b4c
DO - 10.1149/2162-8777/ab8b4c
M3 - Article
AN - SCOPUS:85085273152
VL - 9
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
SN - 2162-8769
IS - 4
M1 - 045014
ER -
ID: 71784961