HVPE Growth and Characterization of ϵ-Ga2O3 Films on Various Substrates

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HVPE Growth and Characterization of ϵ-Ga₂O₃ Films on Various Substrates. / Nikolaev, V. I.; Stepanov, S. I.; Pechnikov, A. I.; Shapenkov, S. V.; Scheglov, M. P.; Chikiryaka, A. V.; Vyvenko, O. F.

In: ECS Journal of Solid State Science and Technology, Vol. 9, No. 4, 045014, 01.05.2020.

Research output: Contribution to journal › Article › peer-review

Author

Nikolaev, V. I. ; Stepanov, S. I. ; Pechnikov, A. I. ; Shapenkov, S. V. ; Scheglov, M. P. ; Chikiryaka, A. V. ; Vyvenko, O. F. / HVPE Growth and Characterization of ϵ-Ga₂O₃ Films on Various Substrates. In: ECS Journal of Solid State Science and Technology. 2020 ; Vol. 9, No. 4.

BibTeX

@article{5fd9d5ecf19e4dcaaacb3ffa1485a1a6,

title = "HVPE Growth and Characterization of ϵ-Ga2O3 Films on Various Substrates",

abstract = "In this study we compare the growth of gallium oxide films by halide vapor phase epitaxy (HVPE) on various substrates under the same growth conditions. Gallium oxide films were deposited at 500 C-600 C on basal plane (0001) planar and patterned sapphire substrates, (0001) 2H-GaN, 4H-SiC, and bulk β-Ga2O3 substrates. The layers were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and cathodoluminescence (CL) techniques. Most of the films exhibit growth features of hexagonal symmetry. Sn-doped Ga2O3 films exhibit n-type electrical conductivity. Heterojunctions composed of n-type hexagonal Ga2O3:Sn and p-type GaN:Mg demonstrate diode-like I-V characteristics and emit light under forward bias.",

keywords = "Ga2O3, gallium oxide, CVD, Chemical Vapor Deposition, CHEMICAL-VAPOR-DEPOSITION, GALLIUM OXIDE, THIN-FILMS, HETEROEPITAXIAL GROWTH, PLANE SAPPHIRE, C-PLANE, ALPHA, BETA, PHASES, SN",

author = "Nikolaev, {V. I.} and Stepanov, {S. I.} and Pechnikov, {A. I.} and Shapenkov, {S. V.} and Scheglov, {M. P.} and Chikiryaka, {A. V.} and Vyvenko, {O. F.}",

note = "Publisher Copyright: {\textcopyright} 2020 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",

year = "2020",

month = may,

day = "1",

doi = "10.1149/2162-8777/ab8b4c",

language = "English",

volume = "9",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

publisher = "The Electrochemical Society",

number = "4",

}

RIS

TY - JOUR

T1 - HVPE Growth and Characterization of ϵ-Ga2O3 Films on Various Substrates

AU - Nikolaev, V. I.

AU - Stepanov, S. I.

AU - Pechnikov, A. I.

AU - Shapenkov, S. V.

AU - Scheglov, M. P.

AU - Chikiryaka, A. V.

AU - Vyvenko, O. F.

PY - 2020/5/1

Y1 - 2020/5/1

N2 - In this study we compare the growth of gallium oxide films by halide vapor phase epitaxy (HVPE) on various substrates under the same growth conditions. Gallium oxide films were deposited at 500 C-600 C on basal plane (0001) planar and patterned sapphire substrates, (0001) 2H-GaN, 4H-SiC, and bulk β-Ga2O3 substrates. The layers were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and cathodoluminescence (CL) techniques. Most of the films exhibit growth features of hexagonal symmetry. Sn-doped Ga2O3 films exhibit n-type electrical conductivity. Heterojunctions composed of n-type hexagonal Ga2O3:Sn and p-type GaN:Mg demonstrate diode-like I-V characteristics and emit light under forward bias.

AB - In this study we compare the growth of gallium oxide films by halide vapor phase epitaxy (HVPE) on various substrates under the same growth conditions. Gallium oxide films were deposited at 500 C-600 C on basal plane (0001) planar and patterned sapphire substrates, (0001) 2H-GaN, 4H-SiC, and bulk β-Ga2O3 substrates. The layers were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and cathodoluminescence (CL) techniques. Most of the films exhibit growth features of hexagonal symmetry. Sn-doped Ga2O3 films exhibit n-type electrical conductivity. Heterojunctions composed of n-type hexagonal Ga2O3:Sn and p-type GaN:Mg demonstrate diode-like I-V characteristics and emit light under forward bias.

KW - Ga2O3

KW - gallium oxide

KW - CVD

KW - Chemical Vapor Deposition

KW - CHEMICAL-VAPOR-DEPOSITION

KW - GALLIUM OXIDE

KW - THIN-FILMS

KW - HETEROEPITAXIAL GROWTH

KW - PLANE SAPPHIRE

KW - C-PLANE

KW - ALPHA

KW - BETA

KW - PHASES

KW - SN

UR - http://www.scopus.com/inward/record.url?scp=85085273152&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/cf4d6a94-49d0-385e-816d-d62acb700b73/

U2 - 10.1149/2162-8777/ab8b4c

DO - 10.1149/2162-8777/ab8b4c

M3 - Article

AN - SCOPUS:85085273152

VL - 9

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

SN - 2162-8769

IS - 4

M1 - 045014

ER -

ID: 71784961