Standard

High Quality Graphene Grown by Sublimation on 4H-SiC (0001). / Lebedev, A. A.; Davydov, V. Yu; Usachov, D. Yu; Lebedev, S. P.; Smirnov, A. N.; Eliseyev, I. A.; Dunaevskiy, M. S.; Gushchina, E. V.; Bokai, K. A.; Pezoldt, J.

в: Semiconductors, Том 52, № 14, 01.12.2018, стр. 1882-1885.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Lebedev, AA, Davydov, VY, Usachov, DY, Lebedev, SP, Smirnov, AN, Eliseyev, IA, Dunaevskiy, MS, Gushchina, EV, Bokai, KA & Pezoldt, J 2018, 'High Quality Graphene Grown by Sublimation on 4H-SiC (0001)', Semiconductors, Том. 52, № 14, стр. 1882-1885. https://doi.org/10.1134/S1063782618140154

APA

Lebedev, A. A., Davydov, V. Y., Usachov, D. Y., Lebedev, S. P., Smirnov, A. N., Eliseyev, I. A., Dunaevskiy, M. S., Gushchina, E. V., Bokai, K. A., & Pezoldt, J. (2018). High Quality Graphene Grown by Sublimation on 4H-SiC (0001). Semiconductors, 52(14), 1882-1885. https://doi.org/10.1134/S1063782618140154

Vancouver

Lebedev AA, Davydov VY, Usachov DY, Lebedev SP, Smirnov AN, Eliseyev IA и пр. High Quality Graphene Grown by Sublimation on 4H-SiC (0001). Semiconductors. 2018 Дек. 1;52(14):1882-1885. https://doi.org/10.1134/S1063782618140154

Author

Lebedev, A. A. ; Davydov, V. Yu ; Usachov, D. Yu ; Lebedev, S. P. ; Smirnov, A. N. ; Eliseyev, I. A. ; Dunaevskiy, M. S. ; Gushchina, E. V. ; Bokai, K. A. ; Pezoldt, J. / High Quality Graphene Grown by Sublimation on 4H-SiC (0001). в: Semiconductors. 2018 ; Том 52, № 14. стр. 1882-1885.

BibTeX

@article{03527c03515144e39ef042a945bc3c5e,
title = "High Quality Graphene Grown by Sublimation on 4H-SiC (0001)",
abstract = "Abstract: The structural and electronic characteristics of epitaxial graphene films grown by thermal decomposition of the Si face of a semi-insulating 4H-SiC substrate in an argon environment have been studied by a large set of analytical techniques. It is shown that the results of a complex study make it possible to optimize the growth parameters and develop a reliable technology for the growth of high-quality single-layer graphene films. The charge-carrier concentration in the graphene layer was within 7 × 1011–1 × 1012 cm–2, and the maximum mobility of electrons at room temperature approached 6000 cm2/(V s).",
author = "Lebedev, {A. A.} and Davydov, {V. Yu} and Usachov, {D. Yu} and Lebedev, {S. P.} and Smirnov, {A. N.} and Eliseyev, {I. A.} and Dunaevskiy, {M. S.} and Gushchina, {E. V.} and Bokai, {K. A.} and J. Pezoldt",
year = "2018",
month = dec,
day = "1",
doi = "10.1134/S1063782618140154",
language = "English",
volume = "52",
pages = "1882--1885",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "14",

}

RIS

TY - JOUR

T1 - High Quality Graphene Grown by Sublimation on 4H-SiC (0001)

AU - Lebedev, A. A.

AU - Davydov, V. Yu

AU - Usachov, D. Yu

AU - Lebedev, S. P.

AU - Smirnov, A. N.

AU - Eliseyev, I. A.

AU - Dunaevskiy, M. S.

AU - Gushchina, E. V.

AU - Bokai, K. A.

AU - Pezoldt, J.

PY - 2018/12/1

Y1 - 2018/12/1

N2 - Abstract: The structural and electronic characteristics of epitaxial graphene films grown by thermal decomposition of the Si face of a semi-insulating 4H-SiC substrate in an argon environment have been studied by a large set of analytical techniques. It is shown that the results of a complex study make it possible to optimize the growth parameters and develop a reliable technology for the growth of high-quality single-layer graphene films. The charge-carrier concentration in the graphene layer was within 7 × 1011–1 × 1012 cm–2, and the maximum mobility of electrons at room temperature approached 6000 cm2/(V s).

AB - Abstract: The structural and electronic characteristics of epitaxial graphene films grown by thermal decomposition of the Si face of a semi-insulating 4H-SiC substrate in an argon environment have been studied by a large set of analytical techniques. It is shown that the results of a complex study make it possible to optimize the growth parameters and develop a reliable technology for the growth of high-quality single-layer graphene films. The charge-carrier concentration in the graphene layer was within 7 × 1011–1 × 1012 cm–2, and the maximum mobility of electrons at room temperature approached 6000 cm2/(V s).

UR - http://www.scopus.com/inward/record.url?scp=85059448321&partnerID=8YFLogxK

U2 - 10.1134/S1063782618140154

DO - 10.1134/S1063782618140154

M3 - Article

AN - SCOPUS:85059448321

VL - 52

SP - 1882

EP - 1885

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 14

ER -

ID: 38759219