Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Abstract: The structural and electronic characteristics of epitaxial graphene films grown by thermal decomposition of the Si face of a semi-insulating 4H-SiC substrate in an argon environment have been studied by a large set of analytical techniques. It is shown that the results of a complex study make it possible to optimize the growth parameters and develop a reliable technology for the growth of high-quality single-layer graphene films. The charge-carrier concentration in the graphene layer was within 7 × 1011–1 × 1012 cm–2, and the maximum mobility of electrons at room temperature approached 6000 cm2/(V s).
Язык оригинала | английский |
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Страницы (с-по) | 1882-1885 |
Число страниц | 4 |
Журнал | Semiconductors |
Том | 52 |
Номер выпуска | 14 |
DOI | |
Состояние | Опубликовано - 1 дек 2018 |
ID: 38759219