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Helium focused ion beam irradiation with subsequent chemical etching for the fabrication of nanostructures. / Petrov, Yu.V.; Grigoryev, E.A.; Baraban, A.P.

в: Nanotechnology, Том 31, № 21, 215301, 22.05.2020.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Petrov, YV, Grigoryev, EA & Baraban, AP 2020, 'Helium focused ion beam irradiation with subsequent chemical etching for the fabrication of nanostructures', Nanotechnology, Том. 31, № 21, 215301. https://doi.org/10.1088/1361-6528/ab6fe3

APA

Petrov, Y. V., Grigoryev, E. A., & Baraban, A. P. (2020). Helium focused ion beam irradiation with subsequent chemical etching for the fabrication of nanostructures. Nanotechnology, 31(21), [215301]. https://doi.org/10.1088/1361-6528/ab6fe3

Vancouver

Petrov YV, Grigoryev EA, Baraban AP. Helium focused ion beam irradiation with subsequent chemical etching for the fabrication of nanostructures. Nanotechnology. 2020 Май 22;31(21). 215301. https://doi.org/10.1088/1361-6528/ab6fe3

Author

Petrov, Yu.V. ; Grigoryev, E.A. ; Baraban, A.P. / Helium focused ion beam irradiation with subsequent chemical etching for the fabrication of nanostructures. в: Nanotechnology. 2020 ; Том 31, № 21.

BibTeX

@article{0b44cd6dc0d14a63a0bc3914956a1499,
title = "Helium focused ion beam irradiation with subsequent chemical etching for the fabrication of nanostructures",
abstract = "In this paper we demonstrate a nanofabrication technique based on local ion irradiation of silicon dioxide with a focused helium ion beam. The wet etching of silicon dioxide irradiated with a focused helium ion beam is described in a two-dimensional case both numerically and experimentally. We suggest a model for the etching process based on the distribution of ion induced defects in the irradiated material. The profile of the surface of the etched silicon dioxide is simulated and compared with the results from scanning electron microscopy. Fabrication of a suspended nanostring with a diameter of less than 20 nm by means of etching ion-irradiated material is demonstrated.",
keywords = "Helium ion microscope, Ion beam enhanced etching, Nanostring, Silicon dioxide, SAPPHIRE, nanostring, SILICON, helium ion microscope, MICROSCOPY, ion beam enhanced etching, IMPLANTATION, silicon dioxide, SIO2",
author = "Yu.V. Petrov and E.A. Grigoryev and A.P. Baraban",
note = "Publisher Copyright: {\textcopyright} 2020 IOP Publishing Ltd.",
year = "2020",
month = may,
day = "22",
doi = "10.1088/1361-6528/ab6fe3",
language = "English",
volume = "31",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "21",

}

RIS

TY - JOUR

T1 - Helium focused ion beam irradiation with subsequent chemical etching for the fabrication of nanostructures

AU - Petrov, Yu.V.

AU - Grigoryev, E.A.

AU - Baraban, A.P.

N1 - Publisher Copyright: © 2020 IOP Publishing Ltd.

PY - 2020/5/22

Y1 - 2020/5/22

N2 - In this paper we demonstrate a nanofabrication technique based on local ion irradiation of silicon dioxide with a focused helium ion beam. The wet etching of silicon dioxide irradiated with a focused helium ion beam is described in a two-dimensional case both numerically and experimentally. We suggest a model for the etching process based on the distribution of ion induced defects in the irradiated material. The profile of the surface of the etched silicon dioxide is simulated and compared with the results from scanning electron microscopy. Fabrication of a suspended nanostring with a diameter of less than 20 nm by means of etching ion-irradiated material is demonstrated.

AB - In this paper we demonstrate a nanofabrication technique based on local ion irradiation of silicon dioxide with a focused helium ion beam. The wet etching of silicon dioxide irradiated with a focused helium ion beam is described in a two-dimensional case both numerically and experimentally. We suggest a model for the etching process based on the distribution of ion induced defects in the irradiated material. The profile of the surface of the etched silicon dioxide is simulated and compared with the results from scanning electron microscopy. Fabrication of a suspended nanostring with a diameter of less than 20 nm by means of etching ion-irradiated material is demonstrated.

KW - Helium ion microscope

KW - Ion beam enhanced etching

KW - Nanostring

KW - Silicon dioxide

KW - SAPPHIRE

KW - nanostring

KW - SILICON

KW - helium ion microscope

KW - MICROSCOPY

KW - ion beam enhanced etching

KW - IMPLANTATION

KW - silicon dioxide

KW - SIO2

UR - https://www.mendeley.com/catalogue/c469f5f0-e74c-3d91-a95e-e6c2b13f4086/

UR - http://www.scopus.com/inward/record.url?scp=85081946044&partnerID=8YFLogxK

U2 - 10.1088/1361-6528/ab6fe3

DO - 10.1088/1361-6528/ab6fe3

M3 - Article

C2 - 31978916

VL - 31

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 21

M1 - 215301

ER -

ID: 51873719