Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Half-ring microlasers based on InGaAs quantum well-dots with high material gain. / Zubov , Fedor ; Moiseev, Eduard ; Maximov , Mikhail ; Vorobyev , Alexander ; Mozharov , Alexey ; Shernyakov, Yuri ; Kalyuzhnyy, Nikolay ; Mintairov, Sergey ; Kulagina, Marina ; Dubrovskii , Vladimir ; Kryzhanovskaya , Natalia ; Zhukov , Alexey .
в: Photonics, Том 10, № 3, 290, 2023.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Half-ring microlasers based on InGaAs quantum well-dots with high material gain
AU - Zubov , Fedor
AU - Moiseev, Eduard
AU - Maximov , Mikhail
AU - Vorobyev , Alexander
AU - Mozharov , Alexey
AU - Shernyakov, Yuri
AU - Kalyuzhnyy, Nikolay
AU - Mintairov, Sergey
AU - Kulagina, Marina
AU - Dubrovskii , Vladimir
AU - Kryzhanovskaya , Natalia
AU - Zhukov , Alexey
N1 - Zubov, F.; Moiseev, E.; Maximov, M.; Vorobyev, A.; Mozharov, A.; Shernyakov, Y.; Kalyuzhnyy, N.; Mintairov, S.; Kulagina, M.; Dubrovskii, V.; et al. Half-Ring Microlasers Based on InGaAs Quantum Well-Dots with High Material Gain. Photonics 2023, 10, 290. https://doi.org/10.3390/photonics10030290
PY - 2023
Y1 - 2023
N2 - We report on half-ring lasers that are 100–200 µm in diameter and are fabricated by cleaving the initial full rings into halves. Characteristics of the half-ring and half-disk lasers fabricated from the same wafer are compared. The active area of the microlasers is based on the quantum heterostructures of mixed (0D/2D) dimensionality, referred to as quantum well-dots with very high material gain. Half-ring lasers show directional light emission and single-mode lasing near the threshold. A maximal continuous-wave output power of 76 mW is achieved for a half-ring that is 200 µm in diameter. Half-rings demonstrate better wall-plug efficiency as compared to half-disks. Lasing in pulse mode is observed up to 140 °C, the characteristic temperature is 100–125 K, depending on the half-ring size. P-side down bonding onto Si-board significantly improves power and temperature characteristics. In CW mode, lasing is maintained up to 97 °C, limited by active-area overheating.
AB - We report on half-ring lasers that are 100–200 µm in diameter and are fabricated by cleaving the initial full rings into halves. Characteristics of the half-ring and half-disk lasers fabricated from the same wafer are compared. The active area of the microlasers is based on the quantum heterostructures of mixed (0D/2D) dimensionality, referred to as quantum well-dots with very high material gain. Half-ring lasers show directional light emission and single-mode lasing near the threshold. A maximal continuous-wave output power of 76 mW is achieved for a half-ring that is 200 µm in diameter. Half-rings demonstrate better wall-plug efficiency as compared to half-disks. Lasing in pulse mode is observed up to 140 °C, the characteristic temperature is 100–125 K, depending on the half-ring size. P-side down bonding onto Si-board significantly improves power and temperature characteristics. In CW mode, lasing is maintained up to 97 °C, limited by active-area overheating.
KW - diode microlasers
KW - half-rings
KW - half-disks
KW - microdisks
KW - quantum well-dots
UR - https://www.mdpi.com/2304-6732/10/3/290
UR - https://publications.hse.ru/en/articles/842903190
M3 - Article
VL - 10
JO - Photonics
JF - Photonics
SN - 2304-6732
IS - 3
M1 - 290
ER -
ID: 107027335