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Formation of Thin GaAs Buffer Layers on Silicon for Light-Emitting Devices. / Lendyashova, V.V.; Il’kiv, I.V.; Borodin, B.R.; Kirilenko, D.A.; Dragunova, A.S.; Shugabaev, T.; Cirlin, G.E.

в: Journal of Surface Investigation X-Ray, Synchrotron and Neutron Techniques, Том 18, № 4, 2024, стр. 796-800.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Lendyashova, VV, Il’kiv, IV, Borodin, BR, Kirilenko, DA, Dragunova, AS, Shugabaev, T & Cirlin, GE 2024, 'Formation of Thin GaAs Buffer Layers on Silicon for Light-Emitting Devices', Journal of Surface Investigation X-Ray, Synchrotron and Neutron Techniques, Том. 18, № 4, стр. 796-800. https://doi.org/10.1134/S1027451024700460

APA

Lendyashova, V. V., Il’kiv, I. V., Borodin, B. R., Kirilenko, D. A., Dragunova, A. S., Shugabaev, T., & Cirlin, G. E. (2024). Formation of Thin GaAs Buffer Layers on Silicon for Light-Emitting Devices. Journal of Surface Investigation X-Ray, Synchrotron and Neutron Techniques, 18(4), 796-800. https://doi.org/10.1134/S1027451024700460

Vancouver

Lendyashova VV, Il’kiv IV, Borodin BR, Kirilenko DA, Dragunova AS, Shugabaev T и пр. Formation of Thin GaAs Buffer Layers on Silicon for Light-Emitting Devices. Journal of Surface Investigation X-Ray, Synchrotron and Neutron Techniques. 2024;18(4):796-800. https://doi.org/10.1134/S1027451024700460

Author

Lendyashova, V.V. ; Il’kiv, I.V. ; Borodin, B.R. ; Kirilenko, D.A. ; Dragunova, A.S. ; Shugabaev, T. ; Cirlin, G.E. / Formation of Thin GaAs Buffer Layers on Silicon for Light-Emitting Devices. в: Journal of Surface Investigation X-Ray, Synchrotron and Neutron Techniques. 2024 ; Том 18, № 4. стр. 796-800.

BibTeX

@article{f25b9a86f76342bd86ac10e52e7f59b7,
title = "Formation of Thin GaAs Buffer Layers on Silicon for Light-Emitting Devices",
abstract = "Abstract: The experimental data on the growth processes of GaAs layers on silicon substrates by molecular beam epitaxy are presented. The formation of a buffer Si layer in a single growth process has been found to significantly improve the crystalline quality of GaAs layers formed on its surface and to prevent the formation of antiphase domains on both off-cut toward the [110] direction and singular Si(100) substrates. It has been demonstrated that the use of cyclic thermal annealing at temperatures 350–660°C in the flow of arsenic atoms makes it possible to reduce the number of threading dislocations and increase the smoothness of the GaAs layers surface. Possible mechanisms that lead to improvement in the quality of the surface layers of GaAs are considered. It is shown that for the thus obtained GaAs layers of submicron thickness on singular Si(100) substrates the mean square surface roughness is 1.9 nm. The principal possibility of using thin GaAs layers on silicon as templates for forming on them light-emitting semiconductor heterostructures with active area based on self-organizing InAs quantum dots and InGaAs quantum well is presented. It is found that the resulting materials exhibit photoluminescence at an emission wavelength of 1.2 µm at room temperature. {\textcopyright} 2024 Elsevier B.V., All rights reserved.",
keywords = "gallium arsenide, indium arsenide, indium gallium arsenide, molecular beam epitaxy, quantum dots, semiconductor heterostructures, semiconductors, silicon, submicron layers, telecommunications, Carrier concentration, Heterojunctions, Indium arsenide, Layered semiconductors, Light emitting diodes, Molecular beam epitaxy, Photoluminescence, Semiconducting indium gallium arsenide, Semiconducting indium phosphide, Semiconducting silicon compounds, Semiconductor quantum wells, Silicon wafers, GaAs, Growth process, Indium gallium arsenide, Light-emitting device, Molecular-beam epitaxy, Quantum dot, Semiconductor heterostructure, Si (100) substrate, Submicron, Submicron layer, Gallium arsenide",
author = "V.V. Lendyashova and I.V. Il{\textquoteright}kiv and B.R. Borodin and D.A. Kirilenko and A.S. Dragunova and T. Shugabaev and G.E. Cirlin",
note = "Export Date: 01 November 2025; Cited By: 0; Correspondence Address: V.V. Lendyashova; St. Petersburg State University, St. Petersburg, 199034, Russian Federation; email: erilerican@gmail.com; I.V. Ilkiv; St. Petersburg State University, St. Petersburg, 199034, Russian Federation; email: fiskerr@ymail.com",
year = "2024",
doi = "10.1134/S1027451024700460",
language = "Английский",
volume = "18",
pages = "796--800",
journal = "ПОВЕРХНОСТЬ. РЕНТГЕНОВСКИЕ, СИНХРОТРОННЫЕ И НЕЙТРОННЫЕ ИССЛЕДОВАНИЯ",
issn = "1027-4510",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "4",

}

RIS

TY - JOUR

T1 - Formation of Thin GaAs Buffer Layers on Silicon for Light-Emitting Devices

AU - Lendyashova, V.V.

AU - Il’kiv, I.V.

AU - Borodin, B.R.

AU - Kirilenko, D.A.

AU - Dragunova, A.S.

AU - Shugabaev, T.

AU - Cirlin, G.E.

N1 - Export Date: 01 November 2025; Cited By: 0; Correspondence Address: V.V. Lendyashova; St. Petersburg State University, St. Petersburg, 199034, Russian Federation; email: erilerican@gmail.com; I.V. Ilkiv; St. Petersburg State University, St. Petersburg, 199034, Russian Federation; email: fiskerr@ymail.com

PY - 2024

Y1 - 2024

N2 - Abstract: The experimental data on the growth processes of GaAs layers on silicon substrates by molecular beam epitaxy are presented. The formation of a buffer Si layer in a single growth process has been found to significantly improve the crystalline quality of GaAs layers formed on its surface and to prevent the formation of antiphase domains on both off-cut toward the [110] direction and singular Si(100) substrates. It has been demonstrated that the use of cyclic thermal annealing at temperatures 350–660°C in the flow of arsenic atoms makes it possible to reduce the number of threading dislocations and increase the smoothness of the GaAs layers surface. Possible mechanisms that lead to improvement in the quality of the surface layers of GaAs are considered. It is shown that for the thus obtained GaAs layers of submicron thickness on singular Si(100) substrates the mean square surface roughness is 1.9 nm. The principal possibility of using thin GaAs layers on silicon as templates for forming on them light-emitting semiconductor heterostructures with active area based on self-organizing InAs quantum dots and InGaAs quantum well is presented. It is found that the resulting materials exhibit photoluminescence at an emission wavelength of 1.2 µm at room temperature. © 2024 Elsevier B.V., All rights reserved.

AB - Abstract: The experimental data on the growth processes of GaAs layers on silicon substrates by molecular beam epitaxy are presented. The formation of a buffer Si layer in a single growth process has been found to significantly improve the crystalline quality of GaAs layers formed on its surface and to prevent the formation of antiphase domains on both off-cut toward the [110] direction and singular Si(100) substrates. It has been demonstrated that the use of cyclic thermal annealing at temperatures 350–660°C in the flow of arsenic atoms makes it possible to reduce the number of threading dislocations and increase the smoothness of the GaAs layers surface. Possible mechanisms that lead to improvement in the quality of the surface layers of GaAs are considered. It is shown that for the thus obtained GaAs layers of submicron thickness on singular Si(100) substrates the mean square surface roughness is 1.9 nm. The principal possibility of using thin GaAs layers on silicon as templates for forming on them light-emitting semiconductor heterostructures with active area based on self-organizing InAs quantum dots and InGaAs quantum well is presented. It is found that the resulting materials exhibit photoluminescence at an emission wavelength of 1.2 µm at room temperature. © 2024 Elsevier B.V., All rights reserved.

KW - gallium arsenide

KW - indium arsenide

KW - indium gallium arsenide

KW - molecular beam epitaxy

KW - quantum dots

KW - semiconductor heterostructures

KW - semiconductors

KW - silicon

KW - submicron layers

KW - telecommunications

KW - Carrier concentration

KW - Heterojunctions

KW - Indium arsenide

KW - Layered semiconductors

KW - Light emitting diodes

KW - Molecular beam epitaxy

KW - Photoluminescence

KW - Semiconducting indium gallium arsenide

KW - Semiconducting indium phosphide

KW - Semiconducting silicon compounds

KW - Semiconductor quantum wells

KW - Silicon wafers

KW - GaAs

KW - Growth process

KW - Indium gallium arsenide

KW - Light-emitting device

KW - Molecular-beam epitaxy

KW - Quantum dot

KW - Semiconductor heterostructure

KW - Si (100) substrate

KW - Submicron

KW - Submicron layer

KW - Gallium arsenide

U2 - 10.1134/S1027451024700460

DO - 10.1134/S1027451024700460

M3 - статья

VL - 18

SP - 796

EP - 800

JO - ПОВЕРХНОСТЬ. РЕНТГЕНОВСКИЕ, СИНХРОТРОННЫЕ И НЕЙТРОННЫЕ ИССЛЕДОВАНИЯ

JF - ПОВЕРХНОСТЬ. РЕНТГЕНОВСКИЕ, СИНХРОТРОННЫЕ И НЕЙТРОННЫЕ ИССЛЕДОВАНИЯ

SN - 1027-4510

IS - 4

ER -

ID: 143423682