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Formation of donor centers upon the annealing of silicon light-emitting structures implanted with oxygen ions. / Sobolev, N.A.; Danilov, D.V.; Aleksandrov, O.V.; Loshachenko, A.S.; Sakharov, V.I.; Serenkov, I.T.; Shek, E.I.; Trapeznikova, I.N.

в: Semiconductors, Том 49, № 3, 2015, стр. 406-408.

Результаты исследований: Научные публикации в периодических изданиях › статья

Harvard

Sobolev, NA, Danilov, DV, Aleksandrov, OV, Loshachenko, AS, Sakharov, VI, Serenkov, IT, Shek, EI & Trapeznikova, IN 2015, 'Formation of donor centers upon the annealing of silicon light-emitting structures implanted with oxygen ions', Semiconductors, Том. 49, № 3, стр. 406-408. https://doi.org/10.1134/S1063782615030203

APA

Sobolev, N. A., Danilov, D. V., Aleksandrov, O. V., Loshachenko, A. S., Sakharov, V. I., Serenkov, I. T., Shek, E. I., & Trapeznikova, I. N. (2015). Formation of donor centers upon the annealing of silicon light-emitting structures implanted with oxygen ions. Semiconductors, 49(3), 406-408. https://doi.org/10.1134/S1063782615030203

Vancouver

Sobolev NA, Danilov DV, Aleksandrov OV, Loshachenko AS, Sakharov VI, Serenkov IT и пр. Formation of donor centers upon the annealing of silicon light-emitting structures implanted with oxygen ions. Semiconductors. 2015;49(3):406-408. https://doi.org/10.1134/S1063782615030203

Author

Sobolev, N.A. ; Danilov, D.V. ; Aleksandrov, O.V. ; Loshachenko, A.S. ; Sakharov, V.I. ; Serenkov, I.T. ; Shek, E.I. ; Trapeznikova, I.N. / Formation of donor centers upon the annealing of silicon light-emitting structures implanted with oxygen ions. в: Semiconductors. 2015 ; Том 49, № 3. стр. 406-408.

BibTeX

@article{a93ad6a157094563a1035890911f2e4e,
title = "Formation of donor centers upon the annealing of silicon light-emitting structures implanted with oxygen ions",
abstract = "{\textcopyright} 2015, Pleiades Publishing, Ltd. It is found that the implantation of silicon with oxygen ions and subsequent annealing at high temperatures are accompanied by the formation of electrically active donor centers and by the p-n conversion of the conductivity of silicon. The concentration and spatial distribution of these centers depend on the annealing temperature. The results are accounted for by the interaction of oxygen atoms with intrinsic point defects formed upon the annealing of implantation damages.",
author = "N.A. Sobolev and D.V. Danilov and O.V. Aleksandrov and A.S. Loshachenko and V.I. Sakharov and I.T. Serenkov and E.I. Shek and I.N. Trapeznikova",
year = "2015",
doi = "10.1134/S1063782615030203",
language = "English",
volume = "49",
pages = "406--408",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "3",

}

RIS

TY - JOUR

T1 - Formation of donor centers upon the annealing of silicon light-emitting structures implanted with oxygen ions

AU - Sobolev, N.A.

AU - Danilov, D.V.

AU - Aleksandrov, O.V.

AU - Loshachenko, A.S.

AU - Sakharov, V.I.

AU - Serenkov, I.T.

AU - Shek, E.I.

AU - Trapeznikova, I.N.

PY - 2015

Y1 - 2015

N2 - © 2015, Pleiades Publishing, Ltd. It is found that the implantation of silicon with oxygen ions and subsequent annealing at high temperatures are accompanied by the formation of electrically active donor centers and by the p-n conversion of the conductivity of silicon. The concentration and spatial distribution of these centers depend on the annealing temperature. The results are accounted for by the interaction of oxygen atoms with intrinsic point defects formed upon the annealing of implantation damages.

AB - © 2015, Pleiades Publishing, Ltd. It is found that the implantation of silicon with oxygen ions and subsequent annealing at high temperatures are accompanied by the formation of electrically active donor centers and by the p-n conversion of the conductivity of silicon. The concentration and spatial distribution of these centers depend on the annealing temperature. The results are accounted for by the interaction of oxygen atoms with intrinsic point defects formed upon the annealing of implantation damages.

U2 - 10.1134/S1063782615030203

DO - 10.1134/S1063782615030203

M3 - Article

VL - 49

SP - 406

EP - 408

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 3

ER -

ID: 3947297