Research output: Contribution to journal › Article
Formation of donor centers upon the annealing of silicon light-emitting structures implanted with oxygen ions. / Sobolev, N.A.; Danilov, D.V.; Aleksandrov, O.V.; Loshachenko, A.S.; Sakharov, V.I.; Serenkov, I.T.; Shek, E.I.; Trapeznikova, I.N.
In: Semiconductors, Vol. 49, No. 3, 2015, p. 406-408.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Formation of donor centers upon the annealing of silicon light-emitting structures implanted with oxygen ions
AU - Sobolev, N.A.
AU - Danilov, D.V.
AU - Aleksandrov, O.V.
AU - Loshachenko, A.S.
AU - Sakharov, V.I.
AU - Serenkov, I.T.
AU - Shek, E.I.
AU - Trapeznikova, I.N.
PY - 2015
Y1 - 2015
N2 - © 2015, Pleiades Publishing, Ltd. It is found that the implantation of silicon with oxygen ions and subsequent annealing at high temperatures are accompanied by the formation of electrically active donor centers and by the p-n conversion of the conductivity of silicon. The concentration and spatial distribution of these centers depend on the annealing temperature. The results are accounted for by the interaction of oxygen atoms with intrinsic point defects formed upon the annealing of implantation damages.
AB - © 2015, Pleiades Publishing, Ltd. It is found that the implantation of silicon with oxygen ions and subsequent annealing at high temperatures are accompanied by the formation of electrically active donor centers and by the p-n conversion of the conductivity of silicon. The concentration and spatial distribution of these centers depend on the annealing temperature. The results are accounted for by the interaction of oxygen atoms with intrinsic point defects formed upon the annealing of implantation damages.
U2 - 10.1134/S1063782615030203
DO - 10.1134/S1063782615030203
M3 - Article
VL - 49
SP - 406
EP - 408
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 3
ER -
ID: 3947297