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EXPLOSIVE EMISSION OF SEMICONDUCTING POINT CATHODES. / Zhukov, V. M.; Fursei, G. N.; Givargizov, E. I.; Ventova, I. D.; Egorov, N. V.

в: Sov Phys Tech Phys, Том 21, № 9, 01.01.1976, стр. 1110-1112.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Zhukov, VM, Fursei, GN, Givargizov, EI, Ventova, ID & Egorov, NV 1976, 'EXPLOSIVE EMISSION OF SEMICONDUCTING POINT CATHODES.', Sov Phys Tech Phys, Том. 21, № 9, стр. 1110-1112.

APA

Zhukov, V. M., Fursei, G. N., Givargizov, E. I., Ventova, I. D., & Egorov, N. V. (1976). EXPLOSIVE EMISSION OF SEMICONDUCTING POINT CATHODES. Sov Phys Tech Phys, 21(9), 1110-1112.

Vancouver

Zhukov VM, Fursei GN, Givargizov EI, Ventova ID, Egorov NV. EXPLOSIVE EMISSION OF SEMICONDUCTING POINT CATHODES. Sov Phys Tech Phys. 1976 Янв. 1;21(9):1110-1112.

Author

Zhukov, V. M. ; Fursei, G. N. ; Givargizov, E. I. ; Ventova, I. D. ; Egorov, N. V. / EXPLOSIVE EMISSION OF SEMICONDUCTING POINT CATHODES. в: Sov Phys Tech Phys. 1976 ; Том 21, № 9. стр. 1110-1112.

BibTeX

@article{0ef7d9f34b1d40619e8d95341f27618d,
title = "EXPLOSIVE EMISSION OF SEMICONDUCTING POINT CATHODES.",
abstract = "Explosive emission of semiconducting points is demonstrated. A large number of electrons in the conduction band are produced by breakdown as the result of avalanche multiplication of carriers in the semiconducting emitter in the strong electric field. The explosive emission for semiconducting points, like that of metal points, has a stage of a rapid current rise and a subsequent saturation. During the explosive emission a large number of submicroscopic protuberances form on the surface of the semiconducting cathode. If several points are to be exploded simultaneously, the geometric parameters must be very nearly the same, and high overvoltages must be provided.",
author = "Zhukov, {V. M.} and Fursei, {G. N.} and Givargizov, {E. I.} and Ventova, {I. D.} and Egorov, {N. V.}",
year = "1976",
month = jan,
day = "1",
language = "English",
volume = "21",
pages = "1110--1112",
journal = "Technical Physics",
issn = "1063-7842",
publisher = "Pleiades Publishing",
number = "9",

}

RIS

TY - JOUR

T1 - EXPLOSIVE EMISSION OF SEMICONDUCTING POINT CATHODES.

AU - Zhukov, V. M.

AU - Fursei, G. N.

AU - Givargizov, E. I.

AU - Ventova, I. D.

AU - Egorov, N. V.

PY - 1976/1/1

Y1 - 1976/1/1

N2 - Explosive emission of semiconducting points is demonstrated. A large number of electrons in the conduction band are produced by breakdown as the result of avalanche multiplication of carriers in the semiconducting emitter in the strong electric field. The explosive emission for semiconducting points, like that of metal points, has a stage of a rapid current rise and a subsequent saturation. During the explosive emission a large number of submicroscopic protuberances form on the surface of the semiconducting cathode. If several points are to be exploded simultaneously, the geometric parameters must be very nearly the same, and high overvoltages must be provided.

AB - Explosive emission of semiconducting points is demonstrated. A large number of electrons in the conduction band are produced by breakdown as the result of avalanche multiplication of carriers in the semiconducting emitter in the strong electric field. The explosive emission for semiconducting points, like that of metal points, has a stage of a rapid current rise and a subsequent saturation. During the explosive emission a large number of submicroscopic protuberances form on the surface of the semiconducting cathode. If several points are to be exploded simultaneously, the geometric parameters must be very nearly the same, and high overvoltages must be provided.

UR - http://www.scopus.com/inward/record.url?scp=0017003348&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0017003348

VL - 21

SP - 1110

EP - 1112

JO - Technical Physics

JF - Technical Physics

SN - 1063-7842

IS - 9

ER -

ID: 49548153