Explosive emission of semiconducting points is demonstrated. A large number of electrons in the conduction band are produced by breakdown as the result of avalanche multiplication of carriers in the semiconducting emitter in the strong electric field. The explosive emission for semiconducting points, like that of metal points, has a stage of a rapid current rise and a subsequent saturation. During the explosive emission a large number of submicroscopic protuberances form on the surface of the semiconducting cathode. If several points are to be exploded simultaneously, the geometric parameters must be very nearly the same, and high overvoltages must be provided.