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Exciton spectra and electrical conductivity of epitaxial silicon-doped GaN layers. / Agekyan, V.F.; Vorob'ev, L.E.; Melentyev, G.A.; Nykänen, H.; Serov, A.Y.; Suihkonen, S.; Filosofov, N.G.; Shalygin, V.A.

в: Physics of the Solid State, Том 55, № 2, 2013, стр. 296-300.

Результаты исследований: Научные публикации в периодических изданиях › статья

Harvard

Agekyan, VF, Vorob'ev, LE, Melentyev, GA, Nykänen, H, Serov, AY, Suihkonen, S, Filosofov, NG & Shalygin, VA 2013, 'Exciton spectra and electrical conductivity of epitaxial silicon-doped GaN layers', Physics of the Solid State, Том. 55, № 2, стр. 296-300. https://doi.org/10.1134/S1063783413020029

APA

Agekyan, V. F., Vorob'ev, L. E., Melentyev, G. A., Nykänen, H., Serov, A. Y., Suihkonen, S., Filosofov, N. G., & Shalygin, V. A. (2013). Exciton spectra and electrical conductivity of epitaxial silicon-doped GaN layers. Physics of the Solid State, 55(2), 296-300. https://doi.org/10.1134/S1063783413020029

Vancouver

Agekyan VF, Vorob'ev LE, Melentyev GA, Nykänen H, Serov AY, Suihkonen S и пр. Exciton spectra and electrical conductivity of epitaxial silicon-doped GaN layers. Physics of the Solid State. 2013;55(2):296-300. https://doi.org/10.1134/S1063783413020029

Author

Agekyan, V.F. ; Vorob'ev, L.E. ; Melentyev, G.A. ; Nykänen, H. ; Serov, A.Y. ; Suihkonen, S. ; Filosofov, N.G. ; Shalygin, V.A. / Exciton spectra and electrical conductivity of epitaxial silicon-doped GaN layers. в: Physics of the Solid State. 2013 ; Том 55, № 2. стр. 296-300.

BibTeX

@article{83cd4c8a42da4c118df4559a1b86de8c,
title = "Exciton spectra and electrical conductivity of epitaxial silicon-doped GaN layers",
author = "V.F. Agekyan and L.E. Vorob'ev and G.A. Melentyev and H. Nyk{\"a}nen and A.Y. Serov and S. Suihkonen and N.G. Filosofov and V.A. Shalygin",
year = "2013",
doi = "10.1134/S1063783413020029",
language = "English",
volume = "55",
pages = "296--300",
journal = "Physics of the Solid State",
issn = "1063-7834",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "2",

}

RIS

TY - JOUR

T1 - Exciton spectra and electrical conductivity of epitaxial silicon-doped GaN layers

AU - Agekyan, V.F.

AU - Vorob'ev, L.E.

AU - Melentyev, G.A.

AU - Nykänen, H.

AU - Serov, A.Y.

AU - Suihkonen, S.

AU - Filosofov, N.G.

AU - Shalygin, V.A.

PY - 2013

Y1 - 2013

U2 - 10.1134/S1063783413020029

DO - 10.1134/S1063783413020029

M3 - Article

VL - 55

SP - 296

EP - 300

JO - Physics of the Solid State

JF - Physics of the Solid State

SN - 1063-7834

IS - 2

ER -

ID: 7381151