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Exciton spectra and electrical conductivity of epitaxial silicon-doped GaN layers. / Agekyan, V.F.; Vorob'ev, L.E.; Melentyev, G.A.; Nykänen, H.; Serov, A.Y.; Suihkonen, S.; Filosofov, N.G.; Shalygin, V.A.
In:
Physics of the Solid State, Vol. 55, No. 2, 2013, p. 296-300.
Research output: Contribution to journal › Article
Harvard
Agekyan, VF, Vorob'ev, LE, Melentyev, GA, Nykänen, H
, Serov, AY, Suihkonen, S
, Filosofov, NG & Shalygin, VA 2013, '
Exciton spectra and electrical conductivity of epitaxial silicon-doped GaN layers',
Physics of the Solid State, vol. 55, no. 2, pp. 296-300.
https://doi.org/10.1134/S1063783413020029
APA
Agekyan, V. F., Vorob'ev, L. E., Melentyev, G. A., Nykänen, H.
, Serov, A. Y., Suihkonen, S.
, Filosofov, N. G., & Shalygin, V. A. (2013).
Exciton spectra and electrical conductivity of epitaxial silicon-doped GaN layers.
Physics of the Solid State,
55(2), 296-300.
https://doi.org/10.1134/S1063783413020029
Vancouver
Author
BibTeX
@article{83cd4c8a42da4c118df4559a1b86de8c,
title = "Exciton spectra and electrical conductivity of epitaxial silicon-doped GaN layers",
author = "V.F. Agekyan and L.E. Vorob'ev and G.A. Melentyev and H. Nyk{\"a}nen and A.Y. Serov and S. Suihkonen and N.G. Filosofov and V.A. Shalygin",
year = "2013",
doi = "10.1134/S1063783413020029",
language = "English",
volume = "55",
pages = "296--300",
journal = "Physics of the Solid State",
issn = "1063-7834",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "2",
}
RIS
TY - JOUR
T1 - Exciton spectra and electrical conductivity of epitaxial silicon-doped GaN layers
AU - Agekyan, V.F.
AU - Vorob'ev, L.E.
AU - Melentyev, G.A.
AU - Nykänen, H.
AU - Serov, A.Y.
AU - Suihkonen, S.
AU - Filosofov, N.G.
AU - Shalygin, V.A.
PY - 2013
Y1 - 2013
U2 - 10.1134/S1063783413020029
DO - 10.1134/S1063783413020029
M3 - Article
VL - 55
SP - 296
EP - 300
JO - Physics of the Solid State
JF - Physics of the Solid State
SN - 1063-7834
IS - 2
ER -