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Excitatory and inhibitory optical neuron implementation using lasing wavelength switching in edge-coupled InAs/InGaAs/GaAs quantum dot lasers. / Maximov, M.; Shernyakov, Y.; Kornyshov, G.; Beckman, A.; Kharchenko, A.; Gordeev, N.; Simchuk, O.; Dubrovskiǐ, V.; Vorobyev, A.; Zubov, F.

в: Applied Physics Letters, Том 127, № 13, 29.09.2025.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

Harvard

Maximov, M, Shernyakov, Y, Kornyshov, G, Beckman, A, Kharchenko, A, Gordeev, N, Simchuk, O, Dubrovskiǐ, V, Vorobyev, A & Zubov, F 2025, 'Excitatory and inhibitory optical neuron implementation using lasing wavelength switching in edge-coupled InAs/InGaAs/GaAs quantum dot lasers', Applied Physics Letters, Том. 127, № 13. https://doi.org/10.1063/5.0292377

APA

Maximov, M., Shernyakov, Y., Kornyshov, G., Beckman, A., Kharchenko, A., Gordeev, N., Simchuk, O., Dubrovskiǐ, V., Vorobyev, A., & Zubov, F. (2025). Excitatory and inhibitory optical neuron implementation using lasing wavelength switching in edge-coupled InAs/InGaAs/GaAs quantum dot lasers. Applied Physics Letters, 127(13). https://doi.org/10.1063/5.0292377

Vancouver

Maximov M, Shernyakov Y, Kornyshov G, Beckman A, Kharchenko A, Gordeev N и пр. Excitatory and inhibitory optical neuron implementation using lasing wavelength switching in edge-coupled InAs/InGaAs/GaAs quantum dot lasers. Applied Physics Letters. 2025 Сент. 29;127(13). https://doi.org/10.1063/5.0292377

Author

Maximov, M. ; Shernyakov, Y. ; Kornyshov, G. ; Beckman, A. ; Kharchenko, A. ; Gordeev, N. ; Simchuk, O. ; Dubrovskiǐ, V. ; Vorobyev, A. ; Zubov, F. / Excitatory and inhibitory optical neuron implementation using lasing wavelength switching in edge-coupled InAs/InGaAs/GaAs quantum dot lasers. в: Applied Physics Letters. 2025 ; Том 127, № 13.

BibTeX

@article{0493baca71d941c4b0566db1e06e5cfd,
title = "Excitatory and inhibitory optical neuron implementation using lasing wavelength switching in edge-coupled InAs/InGaAs/GaAs quantum dot lasers",
abstract = "We report on lasing wavelength switching effects in InAs/InGaAs/GaAs quantum dot (QD) edge-emitting lasers activated by electrical and additional optical pumping provided by another edge-coupled QD laser. The lasers under study operate either on the ground state (GS) or on the excited state (ES). Optical pumping is provided by either GS (1260 nm) or ES (1180 nm) emission. Thus, we have evaluated four combinations of lasing modes and pumping wavelengths. Pumping of QD laser operating on ES transition with light from the GS transition results in suppression of ES lasing, with only GS emission detected. In the other three cases, optical pumping does not change the lasing mode. The switching effects resemble the behavior of biological neurons and can be useful for designing neuromorphic photonic integrated circuits. {\textcopyright} 2025 Elsevier B.V., All rights reserved.",
keywords = "Excited states, Gallium compounds, Ground state, III-V semiconductors, Neurons, Optical pumping, Optical switches, Optically pumped lasers, Edge coupled, Excited-states, InAs/InGaAs, InGaAs/GaAs, Lasing modes, Lasing wavelength, Optical-, Quantum-dot lasers, Switching effect, Wavelength-switching, Nanocrystals",
author = "M. Maximov and Y. Shernyakov and G. Kornyshov and A. Beckman and A. Kharchenko and N. Gordeev and O. Simchuk and V. Dubrovskiǐ and A. Vorobyev and F. Zubov",
note = "Export Date: 01 November 2025; Cited By: 0; Correspondence Address: F. Zubov; Alferov University, St. Petersburg, 194021, Russian Federation; email: fedyazu@mail.ru; CODEN: APPLA",
year = "2025",
month = sep,
day = "29",
doi = "10.1063/5.0292377",
language = "Английский",
volume = "127",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "13",

}

RIS

TY - JOUR

T1 - Excitatory and inhibitory optical neuron implementation using lasing wavelength switching in edge-coupled InAs/InGaAs/GaAs quantum dot lasers

AU - Maximov, M.

AU - Shernyakov, Y.

AU - Kornyshov, G.

AU - Beckman, A.

AU - Kharchenko, A.

AU - Gordeev, N.

AU - Simchuk, O.

AU - Dubrovskiǐ, V.

AU - Vorobyev, A.

AU - Zubov, F.

N1 - Export Date: 01 November 2025; Cited By: 0; Correspondence Address: F. Zubov; Alferov University, St. Petersburg, 194021, Russian Federation; email: fedyazu@mail.ru; CODEN: APPLA

PY - 2025/9/29

Y1 - 2025/9/29

N2 - We report on lasing wavelength switching effects in InAs/InGaAs/GaAs quantum dot (QD) edge-emitting lasers activated by electrical and additional optical pumping provided by another edge-coupled QD laser. The lasers under study operate either on the ground state (GS) or on the excited state (ES). Optical pumping is provided by either GS (1260 nm) or ES (1180 nm) emission. Thus, we have evaluated four combinations of lasing modes and pumping wavelengths. Pumping of QD laser operating on ES transition with light from the GS transition results in suppression of ES lasing, with only GS emission detected. In the other three cases, optical pumping does not change the lasing mode. The switching effects resemble the behavior of biological neurons and can be useful for designing neuromorphic photonic integrated circuits. © 2025 Elsevier B.V., All rights reserved.

AB - We report on lasing wavelength switching effects in InAs/InGaAs/GaAs quantum dot (QD) edge-emitting lasers activated by electrical and additional optical pumping provided by another edge-coupled QD laser. The lasers under study operate either on the ground state (GS) or on the excited state (ES). Optical pumping is provided by either GS (1260 nm) or ES (1180 nm) emission. Thus, we have evaluated four combinations of lasing modes and pumping wavelengths. Pumping of QD laser operating on ES transition with light from the GS transition results in suppression of ES lasing, with only GS emission detected. In the other three cases, optical pumping does not change the lasing mode. The switching effects resemble the behavior of biological neurons and can be useful for designing neuromorphic photonic integrated circuits. © 2025 Elsevier B.V., All rights reserved.

KW - Excited states

KW - Gallium compounds

KW - Ground state

KW - III-V semiconductors

KW - Neurons

KW - Optical pumping

KW - Optical switches

KW - Optically pumped lasers

KW - Edge coupled

KW - Excited-states

KW - InAs/InGaAs

KW - InGaAs/GaAs

KW - Lasing modes

KW - Lasing wavelength

KW - Optical-

KW - Quantum-dot lasers

KW - Switching effect

KW - Wavelength-switching

KW - Nanocrystals

UR - https://www.mendeley.com/catalogue/05334bcd-457b-3b34-945b-b330363e4b4c/

U2 - 10.1063/5.0292377

DO - 10.1063/5.0292377

M3 - статья

VL - 127

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

ER -

ID: 143730402