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Evaluation of the quality of GaAs epitaxial layers and their interfaces from analysis of the exciton absorption spectra. / Grigorieva, N. R.; Egorov, A. Yu; Zaitsev, D. A.; Nikitina, E. V.; Seisyan, R. P.

в: Semiconductors, Том 48, № 6, 01.01.2014, стр. 754-759.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Grigorieva, NR, Egorov, AY, Zaitsev, DA, Nikitina, EV & Seisyan, RP 2014, 'Evaluation of the quality of GaAs epitaxial layers and their interfaces from analysis of the exciton absorption spectra', Semiconductors, Том. 48, № 6, стр. 754-759. https://doi.org/10.1134/S1063782614060128

APA

Grigorieva, N. R., Egorov, A. Y., Zaitsev, D. A., Nikitina, E. V., & Seisyan, R. P. (2014). Evaluation of the quality of GaAs epitaxial layers and their interfaces from analysis of the exciton absorption spectra. Semiconductors, 48(6), 754-759. https://doi.org/10.1134/S1063782614060128

Vancouver

Grigorieva NR, Egorov AY, Zaitsev DA, Nikitina EV, Seisyan RP. Evaluation of the quality of GaAs epitaxial layers and their interfaces from analysis of the exciton absorption spectra. Semiconductors. 2014 Янв. 1;48(6):754-759. https://doi.org/10.1134/S1063782614060128

Author

Grigorieva, N. R. ; Egorov, A. Yu ; Zaitsev, D. A. ; Nikitina, E. V. ; Seisyan, R. P. / Evaluation of the quality of GaAs epitaxial layers and their interfaces from analysis of the exciton absorption spectra. в: Semiconductors. 2014 ; Том 48, № 6. стр. 754-759.

BibTeX

@article{5a93a141f7b441a6853fda50bf259b96,
title = "Evaluation of the quality of GaAs epitaxial layers and their interfaces from analysis of the exciton absorption spectra",
abstract = "Exciton optical spectra are sensitive to even slight changes in the properties of a solid. The spectra of exciton polaritons can be especially informative, although the spectroscopy of these quasiparticles imposes certain restrictions on the measurement temperature and the quality of the material. Exciton parameters such as the resonance frequency ωT and damping coefficient Γ may vary under the influence of electric fields, defects present in the crystal, or changes in the chemical composition of the film. If the material characteristics vary along the thickness of the film (the z coordinate), so do the resonance frequency and damping coefficient. Here, the spectra of undoped GaAs layers epitaxially grown on GaAs substrates are investigated at T = 1.7 K. Analysis of the spectra at the exciton absorption edge makes it possible to estimate the {"}dead-layer{"} depth, the strength of electric fields, and the concentration of impurities.",
author = "Grigorieva, {N. R.} and Egorov, {A. Yu} and Zaitsev, {D. A.} and Nikitina, {E. V.} and Seisyan, {R. P.}",
year = "2014",
month = jan,
day = "1",
doi = "10.1134/S1063782614060128",
language = "English",
volume = "48",
pages = "754--759",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "6",

}

RIS

TY - JOUR

T1 - Evaluation of the quality of GaAs epitaxial layers and their interfaces from analysis of the exciton absorption spectra

AU - Grigorieva, N. R.

AU - Egorov, A. Yu

AU - Zaitsev, D. A.

AU - Nikitina, E. V.

AU - Seisyan, R. P.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - Exciton optical spectra are sensitive to even slight changes in the properties of a solid. The spectra of exciton polaritons can be especially informative, although the spectroscopy of these quasiparticles imposes certain restrictions on the measurement temperature and the quality of the material. Exciton parameters such as the resonance frequency ωT and damping coefficient Γ may vary under the influence of electric fields, defects present in the crystal, or changes in the chemical composition of the film. If the material characteristics vary along the thickness of the film (the z coordinate), so do the resonance frequency and damping coefficient. Here, the spectra of undoped GaAs layers epitaxially grown on GaAs substrates are investigated at T = 1.7 K. Analysis of the spectra at the exciton absorption edge makes it possible to estimate the "dead-layer" depth, the strength of electric fields, and the concentration of impurities.

AB - Exciton optical spectra are sensitive to even slight changes in the properties of a solid. The spectra of exciton polaritons can be especially informative, although the spectroscopy of these quasiparticles imposes certain restrictions on the measurement temperature and the quality of the material. Exciton parameters such as the resonance frequency ωT and damping coefficient Γ may vary under the influence of electric fields, defects present in the crystal, or changes in the chemical composition of the film. If the material characteristics vary along the thickness of the film (the z coordinate), so do the resonance frequency and damping coefficient. Here, the spectra of undoped GaAs layers epitaxially grown on GaAs substrates are investigated at T = 1.7 K. Analysis of the spectra at the exciton absorption edge makes it possible to estimate the "dead-layer" depth, the strength of electric fields, and the concentration of impurities.

UR - http://www.scopus.com/inward/record.url?scp=84902363060&partnerID=8YFLogxK

U2 - 10.1134/S1063782614060128

DO - 10.1134/S1063782614060128

M3 - Article

AN - SCOPUS:84902363060

VL - 48

SP - 754

EP - 759

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 6

ER -

ID: 45032284