Research output: Contribution to journal › Article › peer-review
Evaluation of the quality of GaAs epitaxial layers and their interfaces from analysis of the exciton absorption spectra. / Grigorieva, N. R.; Egorov, A. Yu; Zaitsev, D. A.; Nikitina, E. V.; Seisyan, R. P.
In: Semiconductors, Vol. 48, No. 6, 01.01.2014, p. 754-759.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Evaluation of the quality of GaAs epitaxial layers and their interfaces from analysis of the exciton absorption spectra
AU - Grigorieva, N. R.
AU - Egorov, A. Yu
AU - Zaitsev, D. A.
AU - Nikitina, E. V.
AU - Seisyan, R. P.
PY - 2014/1/1
Y1 - 2014/1/1
N2 - Exciton optical spectra are sensitive to even slight changes in the properties of a solid. The spectra of exciton polaritons can be especially informative, although the spectroscopy of these quasiparticles imposes certain restrictions on the measurement temperature and the quality of the material. Exciton parameters such as the resonance frequency ωT and damping coefficient Γ may vary under the influence of electric fields, defects present in the crystal, or changes in the chemical composition of the film. If the material characteristics vary along the thickness of the film (the z coordinate), so do the resonance frequency and damping coefficient. Here, the spectra of undoped GaAs layers epitaxially grown on GaAs substrates are investigated at T = 1.7 K. Analysis of the spectra at the exciton absorption edge makes it possible to estimate the "dead-layer" depth, the strength of electric fields, and the concentration of impurities.
AB - Exciton optical spectra are sensitive to even slight changes in the properties of a solid. The spectra of exciton polaritons can be especially informative, although the spectroscopy of these quasiparticles imposes certain restrictions on the measurement temperature and the quality of the material. Exciton parameters such as the resonance frequency ωT and damping coefficient Γ may vary under the influence of electric fields, defects present in the crystal, or changes in the chemical composition of the film. If the material characteristics vary along the thickness of the film (the z coordinate), so do the resonance frequency and damping coefficient. Here, the spectra of undoped GaAs layers epitaxially grown on GaAs substrates are investigated at T = 1.7 K. Analysis of the spectra at the exciton absorption edge makes it possible to estimate the "dead-layer" depth, the strength of electric fields, and the concentration of impurities.
UR - http://www.scopus.com/inward/record.url?scp=84902363060&partnerID=8YFLogxK
U2 - 10.1134/S1063782614060128
DO - 10.1134/S1063782614060128
M3 - Article
AN - SCOPUS:84902363060
VL - 48
SP - 754
EP - 759
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 6
ER -
ID: 45032284