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Electroluminescence of ion-implanted Si-SiO2 structures. / Baraban, A. P.; Konorov, P. P.; Malyavka, L. V.; Troshikhin, A. G.

в: Technical Physics, Том 45, № 8, 01.01.2000, стр. 1042-1044.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Baraban, AP, Konorov, PP, Malyavka, LV & Troshikhin, AG 2000, 'Electroluminescence of ion-implanted Si-SiO2 structures', Technical Physics, Том. 45, № 8, стр. 1042-1044. https://doi.org/10.1134/1.1307014

APA

Baraban, A. P., Konorov, P. P., Malyavka, L. V., & Troshikhin, A. G. (2000). Electroluminescence of ion-implanted Si-SiO2 structures. Technical Physics, 45(8), 1042-1044. https://doi.org/10.1134/1.1307014

Vancouver

Baraban AP, Konorov PP, Malyavka LV, Troshikhin AG. Electroluminescence of ion-implanted Si-SiO2 structures. Technical Physics. 2000 Янв. 1;45(8):1042-1044. https://doi.org/10.1134/1.1307014

Author

Baraban, A. P. ; Konorov, P. P. ; Malyavka, L. V. ; Troshikhin, A. G. / Electroluminescence of ion-implanted Si-SiO2 structures. в: Technical Physics. 2000 ; Том 45, № 8. стр. 1042-1044.

BibTeX

@article{ddf8ea100526416ea58bce778c03a356,
title = "Electroluminescence of ion-implanted Si-SiO2 structures",
abstract = "Specific features of the electroluminescence of ion-implanted (Ar ion implantation in oxide layer bulk) and ion-synthesized (SIMOX technology) Si-SiO2 structures were studied. The electroluminescence from the electrolyte-insulator-semiconductor system was registered in the 250-800 nm range at room temperature. It has been found that implantation increases the concentration of centers already present in the oxide layer bulk and creates new luminescent centers. The nature and the models of the centers are discussed.",
author = "Baraban, {A. P.} and Konorov, {P. P.} and Malyavka, {L. V.} and Troshikhin, {A. G.}",
year = "2000",
month = jan,
day = "1",
doi = "10.1134/1.1307014",
language = "English",
volume = "45",
pages = "1042--1044",
journal = "Technical Physics",
issn = "1063-7842",
publisher = "Pleiades Publishing",
number = "8",

}

RIS

TY - JOUR

T1 - Electroluminescence of ion-implanted Si-SiO2 structures

AU - Baraban, A. P.

AU - Konorov, P. P.

AU - Malyavka, L. V.

AU - Troshikhin, A. G.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - Specific features of the electroluminescence of ion-implanted (Ar ion implantation in oxide layer bulk) and ion-synthesized (SIMOX technology) Si-SiO2 structures were studied. The electroluminescence from the electrolyte-insulator-semiconductor system was registered in the 250-800 nm range at room temperature. It has been found that implantation increases the concentration of centers already present in the oxide layer bulk and creates new luminescent centers. The nature and the models of the centers are discussed.

AB - Specific features of the electroluminescence of ion-implanted (Ar ion implantation in oxide layer bulk) and ion-synthesized (SIMOX technology) Si-SiO2 structures were studied. The electroluminescence from the electrolyte-insulator-semiconductor system was registered in the 250-800 nm range at room temperature. It has been found that implantation increases the concentration of centers already present in the oxide layer bulk and creates new luminescent centers. The nature and the models of the centers are discussed.

UR - http://www.scopus.com/inward/record.url?scp=0034338683&partnerID=8YFLogxK

U2 - 10.1134/1.1307014

DO - 10.1134/1.1307014

M3 - Article

AN - SCOPUS:0034338683

VL - 45

SP - 1042

EP - 1044

JO - Technical Physics

JF - Technical Physics

SN - 1063-7842

IS - 8

ER -

ID: 47620347