Specific features of the electroluminescence of ion-implanted (Ar ion implantation in oxide layer bulk) and ion-synthesized (SIMOX technology) Si-SiO₂ structures were studied. The electroluminescence from the electrolyte-insulator-semiconductor system was registered in the 250-800 nm range at room temperature. It has been found that implantation increases the concentration of centers already present in the oxide layer bulk and creates new luminescent centers. The nature and the models of the centers are discussed.