TY - JOUR

T1 - Electrically-Driven Light Source Embedded in a GaP Nanowaveguide for Visible-Range Photonics on Chip

AU - Lebedev, D.V.

AU - Solomonov, N.A.

AU - Fedorov, V.V.

AU - Sharov, V.A.

AU - Kirilenko, D.A.

AU - Gritchenko, A.S.

AU - Melentiev, P.N.

AU - Balykin, V.I.

AU - Shkoldin, V.A.

AU - Bogdanov, A.A.

AU - Makarov, S.V.

AU - Golubok, A.O.

AU - Mukhin, I.S.

N1 - Export Date: 19 October 2024 Адрес для корреспонденции: Lebedev, D.V.; Alferov University, 8/3 Khlopina, Russian Federation; эл. почта: lebedev_denis@spbau.ru Сведения о финансировании: Russian Science Foundation, RSF, 21‐79‐10346 Сведения о финансировании: Russian Science Foundation, RSF Сведения о финансировании: Ministry of Education and Science of the Russian Federation, Minobrnauka, FSEG‐2024 ‐0017 Сведения о финансировании: Ministry of Education and Science of the Russian Federation, Minobrnauka Текст о финансировании 1: This research was funded by the Russian Science Foundation via grant No. 21\u201079\u201010346. I.M., V.F., and V.S. thanks the Ministry of Science and Higher Education of the Russian Federation (FSEG\u20102024 \u20100017) for financial support of NW synthesis and structure study.

PY - 2024/7/16

Y1 - 2024/7/16

N2 - The key components of photonic integrated circuits are nanoscale optica emitters and nanowaveguides. III-V semiconductor nanostructures are considered as the most promising material platform for these components due to highly efficient luminescence and high refractive index, but the problem of emission coupling with waveguide is to be solved. In this work, the use of GaP nanowires (NWs) with different types of doping (GaP:Si or GaP:Be) is proposed as optical waveguides with directly integrated electrically-driven light sources, solving the problem of emission-to-waveguide coupling. Single NWs are integrated with electrodes and pump electroluminescence by a tunnel junction allowing to study emission properties with nanoscale spatial resolution. Basing on the experiments on scanning tunnelling microscopy (STM), electron microscopy, time-resolved photoluminescence micro-spectroscopy, X-ray diffraction, and STM-induced electroluminescence, it is proven that GaP NWs exhibit different integrated light-source on doping type of NWs. GaP:Be NWs contain inclusion of the crystalline wurtzite phase with a direct bandgap, and, thus, these NW regions can be considered as electrically-driven nanoscale sources of light monolithically integrated into GaP NW-based waveguides. Meanwhile, GaP:Si NWs work as optical waveguides capable of efficient light generation over the entire length of NW. The developed designs are promising for construction of integrated photonic circuits. © 2024 Wiley-VCH GmbH.

AB - The key components of photonic integrated circuits are nanoscale optica emitters and nanowaveguides. III-V semiconductor nanostructures are considered as the most promising material platform for these components due to highly efficient luminescence and high refractive index, but the problem of emission coupling with waveguide is to be solved. In this work, the use of GaP nanowires (NWs) with different types of doping (GaP:Si or GaP:Be) is proposed as optical waveguides with directly integrated electrically-driven light sources, solving the problem of emission-to-waveguide coupling. Single NWs are integrated with electrodes and pump electroluminescence by a tunnel junction allowing to study emission properties with nanoscale spatial resolution. Basing on the experiments on scanning tunnelling microscopy (STM), electron microscopy, time-resolved photoluminescence micro-spectroscopy, X-ray diffraction, and STM-induced electroluminescence, it is proven that GaP NWs exhibit different integrated light-source on doping type of NWs. GaP:Be NWs contain inclusion of the crystalline wurtzite phase with a direct bandgap, and, thus, these NW regions can be considered as electrically-driven nanoscale sources of light monolithically integrated into GaP NW-based waveguides. Meanwhile, GaP:Si NWs work as optical waveguides capable of efficient light generation over the entire length of NW. The developed designs are promising for construction of integrated photonic circuits. © 2024 Wiley-VCH GmbH.

KW - GaP nanowires

KW - light source

KW - nanowaveguide

KW - STM

KW - tunnel junction

KW - Gallium phosphide

KW - III-V semiconductors

KW - Nanowires

KW - Optical waveguides

KW - Refractive index

KW - Scanning electron microscopy

KW - Scanning tunneling microscopy

KW - Semiconductor doping

KW - Semiconductor junctions

KW - Silicon

KW - Silicon compounds

KW - Tunnel junctions

KW - Zinc sulfide

KW - GaP nanowire

KW - High refractive

KW - III/V semiconductors

KW - Nano scale

KW - Nanowaveguides

KW - On chips

KW - Photonics Integrated Circuits

KW - Semiconductor nanostructures

KW - Visible range

KW - Waveguide coupling

KW - Light sources

UR - https://www.mendeley.com/catalogue/021e00a8-d2da-3e02-bb1c-d2f704a15d09/

U2 - 10.1002/adom.202400581

DO - 10.1002/adom.202400581

M3 - статья

VL - 12

JO - Advanced Optical Materials

JF - Advanced Optical Materials

SN - 2195-1071

IS - 25

M1 - 2400581

ER -