Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Electrically Active Defects Induced by α-Particle Irradiation in p-Type Si Surface Barrier Detector. / Bakhlanov, Sergey; Bazlov, Nikolay; Chernobrovkin, Ilia; Danilov, Denis; Derbin, Alexander; Drachnev, Ilia; Kotina, Irina; Konkov, Oleg; Kuzmichev, Artem; Mikulich, Maksim; Muratova, Valentina; Trushin, Maxim; Unzhakov, Evgeniy.
в: Physica Status Solidi (A) Applications and Materials Science, Том 218, № 23, 2100212, 12.2021.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Electrically Active Defects Induced by α-Particle Irradiation in p-Type Si Surface Barrier Detector
AU - Bakhlanov, Sergey
AU - Bazlov, Nikolay
AU - Chernobrovkin, Ilia
AU - Danilov, Denis
AU - Derbin, Alexander
AU - Drachnev, Ilia
AU - Kotina, Irina
AU - Konkov, Oleg
AU - Kuzmichev, Artem
AU - Mikulich, Maksim
AU - Muratova, Valentina
AU - Trushin, Maxim
AU - Unzhakov, Evgeniy
N1 - Publisher Copyright: © 2021 Wiley-VCH GmbH
PY - 2021/12
Y1 - 2021/12
N2 - Herein, the investigation of radiation-induced defects generated in the Al/SiO2/p-type FZ Si surface barrier detector upon irradiation with α-particles at room temperature using capacitance−voltage (C−V) and current deep-level transient spectroscopy (IDLTS) methods is conducted. The carried out C−V measurements indicate the formation of at least 8 × 1012 cm−3 radiation-induced acceptor traps at the depth fairly close to that where, according to TRIM simulations, the highest concentration of vacancy-interstitial pairs is created by the incoming α-particles. The studies conducted by the current DLTS technique allow to relate the observed increase in the acceptor concentration with the near-midgap level at E V + 0.56 eV. This level can apparently be associated with V2O defects recognized previously to be responsible for the space−charge sign inversion in the irradiated n-type Si detectors.
AB - Herein, the investigation of radiation-induced defects generated in the Al/SiO2/p-type FZ Si surface barrier detector upon irradiation with α-particles at room temperature using capacitance−voltage (C−V) and current deep-level transient spectroscopy (IDLTS) methods is conducted. The carried out C−V measurements indicate the formation of at least 8 × 1012 cm−3 radiation-induced acceptor traps at the depth fairly close to that where, according to TRIM simulations, the highest concentration of vacancy-interstitial pairs is created by the incoming α-particles. The studies conducted by the current DLTS technique allow to relate the observed increase in the acceptor concentration with the near-midgap level at E V + 0.56 eV. This level can apparently be associated with V2O defects recognized previously to be responsible for the space−charge sign inversion in the irradiated n-type Si detectors.
KW - deep-level transient spectroscopy
KW - radiation-induced defects
KW - semiconductor detectors
KW - silicon
KW - α-particles
KW - SILICON
KW - alpha-particles
KW - DAMAGE
UR - http://www.scopus.com/inward/record.url?scp=85109380067&partnerID=8YFLogxK
UR - https://www.mendeley.com/catalogue/64cc83a4-fa56-3571-885a-909418a7a030/
U2 - 10.1002/pssa.202100212
DO - 10.1002/pssa.202100212
M3 - Article
AN - SCOPUS:85109380067
VL - 218
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
SN - 1862-6300
IS - 23
M1 - 2100212
ER -
ID: 86152377