Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Electrical levels of dislocation networks in p- and n-type Si. / Isakov, I.; Bondarenko, A.; Vyvenko, O.; Vdovin, V.; Ubyivovk, E.; Kononchuk, O.
в: Journal of Physics: Conference Series, Том 281, № 1, 2011, стр. 012010_1-10.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Electrical levels of dislocation networks in p- and n-type Si
AU - Isakov, I.
AU - Bondarenko, A.
AU - Vyvenko, O.
AU - Vdovin, V.
AU - Ubyivovk, E.
AU - Kononchuk, O.
PY - 2011
Y1 - 2011
N2 - The results of deep level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS) investigations on directly bonded n- and p-type silicon wafers with small twist misorientation angles ranging from 1 to 5 degrees are presented and discussed. Both shallow and deep levels in the upper half of a band gap are found and a good correspondence between the DLTS and MCTS data on n- and p-type samples was established. The dependence of DLTS-peak magnitude on twist and tilt misorientation angles (density of dislocations) was investigated and the origin of different levels is suggested. © Published under licence by IOP Publishing Ltd 2011.
AB - The results of deep level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS) investigations on directly bonded n- and p-type silicon wafers with small twist misorientation angles ranging from 1 to 5 degrees are presented and discussed. Both shallow and deep levels in the upper half of a band gap are found and a good correspondence between the DLTS and MCTS data on n- and p-type samples was established. The dependence of DLTS-peak magnitude on twist and tilt misorientation angles (density of dislocations) was investigated and the origin of different levels is suggested. © Published under licence by IOP Publishing Ltd 2011.
KW - Band gaps
KW - Deep level
KW - Density of dislocation
KW - Dislocation networks
KW - DLTS
KW - Minority carrier transient spectroscopies
KW - Misorientation angle
KW - P-type
KW - P-type silicon wafers
U2 - DOI: 10.1088/1742-6596/281/1/012010
DO - DOI: 10.1088/1742-6596/281/1/012010
M3 - Article
VL - 281
SP - 012010_1-10
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
IS - 1
ER -
ID: 5205970