Electrical levels of dislocation networks in p- and n-type Si

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Electrical levels of dislocation networks in p- and n-type Si. / Isakov, I.; Bondarenko, A.; Vyvenko, O.; Vdovin, V.; Ubyivovk, E.; Kononchuk, O.

In: Journal of Physics: Conference Series, Vol. 281, No. 1, 2011, p. 012010_1-10.

Research output: Contribution to journal › Article › peer-review

Author

Isakov, I. ; Bondarenko, A. ; Vyvenko, O. ; Vdovin, V. ; Ubyivovk, E. ; Kononchuk, O. / Electrical levels of dislocation networks in p- and n-type Si. In: Journal of Physics: Conference Series. 2011 ; Vol. 281, No. 1. pp. 012010_1-10.

BibTeX

@article{206551930f674fcf9af6247917f964b5,

title = "Electrical levels of dislocation networks in p- and n-type Si",

abstract = "The results of deep level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS) investigations on directly bonded n- and p-type silicon wafers with small twist misorientation angles ranging from 1 to 5 degrees are presented and discussed. Both shallow and deep levels in the upper half of a band gap are found and a good correspondence between the DLTS and MCTS data on n- and p-type samples was established. The dependence of DLTS-peak magnitude on twist and tilt misorientation angles (density of dislocations) was investigated and the origin of different levels is suggested. {\textcopyright} Published under licence by IOP Publishing Ltd 2011.",

keywords = "Band gaps, Deep level, Density of dislocation, Dislocation networks, DLTS, Minority carrier transient spectroscopies, Misorientation angle, P-type, P-type silicon wafers",

author = "I. Isakov and A. Bondarenko and O. Vyvenko and V. Vdovin and E. Ubyivovk and O. Kononchuk",

year = "2011",

doi = "DOI: 10.1088/1742-6596/281/1/012010",

language = "English",

volume = "281",

pages = "012010_1--10",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing Ltd.",

number = "1",

}

RIS

TY - JOUR

T1 - Electrical levels of dislocation networks in p- and n-type Si

AU - Isakov, I.

AU - Bondarenko, A.

AU - Vyvenko, O.

AU - Vdovin, V.

AU - Ubyivovk, E.

AU - Kononchuk, O.

PY - 2011

Y1 - 2011

N2 - The results of deep level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS) investigations on directly bonded n- and p-type silicon wafers with small twist misorientation angles ranging from 1 to 5 degrees are presented and discussed. Both shallow and deep levels in the upper half of a band gap are found and a good correspondence between the DLTS and MCTS data on n- and p-type samples was established. The dependence of DLTS-peak magnitude on twist and tilt misorientation angles (density of dislocations) was investigated and the origin of different levels is suggested. © Published under licence by IOP Publishing Ltd 2011.

AB - The results of deep level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS) investigations on directly bonded n- and p-type silicon wafers with small twist misorientation angles ranging from 1 to 5 degrees are presented and discussed. Both shallow and deep levels in the upper half of a band gap are found and a good correspondence between the DLTS and MCTS data on n- and p-type samples was established. The dependence of DLTS-peak magnitude on twist and tilt misorientation angles (density of dislocations) was investigated and the origin of different levels is suggested. © Published under licence by IOP Publishing Ltd 2011.

KW - Band gaps

KW - Deep level

KW - Density of dislocation

KW - Dislocation networks

KW - DLTS

KW - Minority carrier transient spectroscopies

KW - Misorientation angle

KW - P-type

KW - P-type silicon wafers

U2 - DOI: 10.1088/1742-6596/281/1/012010

DO - DOI: 10.1088/1742-6596/281/1/012010

M3 - Article

VL - 281

SP - 012010_1-10

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

ER -

ID: 5205970