Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Elastic fields and physical properties of surface quantum dots. / Bert, N. A.; Kolesnikova, A. L.; Korolev, I. K.; Romanov, A. E.; Freidin, A. B.; Chaldyshev, V. V.; Aifantis, E. C.
в: Physics of the Solid State, Том 53, № 10, 10.2011, стр. 2091-2102.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Elastic fields and physical properties of surface quantum dots
AU - Bert, N. A.
AU - Kolesnikova, A. L.
AU - Korolev, I. K.
AU - Romanov, A. E.
AU - Freidin, A. B.
AU - Chaldyshev, V. V.
AU - Aifantis, E. C.
N1 - Funding Information: ACKNOWLEDGMENTS This study was supported in part by the Russian Foundation for Basic Research (project no. 10 02 91057 NCNI_a) and the EEC (Marie Curie Project).
PY - 2011/10
Y1 - 2011/10
N2 - Elastic fields in a system consisting of a surface coherent axisymmetric quantum dot-island on a massive substrate have been theoretically studied using the finite element method. An analysis of the influence of the quantum dot shape (form factor) and relative size (aspect ratio) δ on the accompanying elastic fields has revealed two critical quantum dot dimensions, δc1 and δc2. For δ & δc1, the fields are independent of the quantum dot shape and aspect ratio. At δ ≥ δc2, the quantum dot top remains almost undistorted. Variation of the stress tensor component σzz (z is the quantum dot axis of symmetry) reveals a region of tensile stresses, which is located in the substrate under the quantum dot at a particular distance from the interface. Using an approximate analytical formula for the radial component of displacements, model electron microscopy images have been calculated for quantum dot islands with δ & δc1 in the InSb/InAs system. The possibility of stress relaxation occurring in the system via the formation of a prismatic interstitial dislocation loop has been considered.
AB - Elastic fields in a system consisting of a surface coherent axisymmetric quantum dot-island on a massive substrate have been theoretically studied using the finite element method. An analysis of the influence of the quantum dot shape (form factor) and relative size (aspect ratio) δ on the accompanying elastic fields has revealed two critical quantum dot dimensions, δc1 and δc2. For δ & δc1, the fields are independent of the quantum dot shape and aspect ratio. At δ ≥ δc2, the quantum dot top remains almost undistorted. Variation of the stress tensor component σzz (z is the quantum dot axis of symmetry) reveals a region of tensile stresses, which is located in the substrate under the quantum dot at a particular distance from the interface. Using an approximate analytical formula for the radial component of displacements, model electron microscopy images have been calculated for quantum dot islands with δ & δc1 in the InSb/InAs system. The possibility of stress relaxation occurring in the system via the formation of a prismatic interstitial dislocation loop has been considered.
UR - http://www.scopus.com/inward/record.url?scp=80053591111&partnerID=8YFLogxK
U2 - 10.1134/S1063783411100052
DO - 10.1134/S1063783411100052
M3 - Article
AN - SCOPUS:80053591111
VL - 53
SP - 2091
EP - 2102
JO - Physics of the Solid State
JF - Physics of the Solid State
SN - 1063-7834
IS - 10
ER -
ID: 97787556