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Elastic fields and physical properties of surface quantum dots. / Bert, N. A.; Kolesnikova, A. L.; Korolev, I. K.; Romanov, A. E.; Freidin, A. B.; Chaldyshev, V. V.; Aifantis, E. C.

In: Physics of the Solid State, Vol. 53, No. 10, 10.2011, p. 2091-2102.

Research output: Contribution to journalArticlepeer-review

Harvard

Bert, NA, Kolesnikova, AL, Korolev, IK, Romanov, AE, Freidin, AB, Chaldyshev, VV & Aifantis, EC 2011, 'Elastic fields and physical properties of surface quantum dots', Physics of the Solid State, vol. 53, no. 10, pp. 2091-2102. https://doi.org/10.1134/S1063783411100052

APA

Bert, N. A., Kolesnikova, A. L., Korolev, I. K., Romanov, A. E., Freidin, A. B., Chaldyshev, V. V., & Aifantis, E. C. (2011). Elastic fields and physical properties of surface quantum dots. Physics of the Solid State, 53(10), 2091-2102. https://doi.org/10.1134/S1063783411100052

Vancouver

Bert NA, Kolesnikova AL, Korolev IK, Romanov AE, Freidin AB, Chaldyshev VV et al. Elastic fields and physical properties of surface quantum dots. Physics of the Solid State. 2011 Oct;53(10):2091-2102. https://doi.org/10.1134/S1063783411100052

Author

Bert, N. A. ; Kolesnikova, A. L. ; Korolev, I. K. ; Romanov, A. E. ; Freidin, A. B. ; Chaldyshev, V. V. ; Aifantis, E. C. / Elastic fields and physical properties of surface quantum dots. In: Physics of the Solid State. 2011 ; Vol. 53, No. 10. pp. 2091-2102.

BibTeX

@article{588937e746324eb0ad4f2964f0e669ea,
title = "Elastic fields and physical properties of surface quantum dots",
abstract = "Elastic fields in a system consisting of a surface coherent axisymmetric quantum dot-island on a massive substrate have been theoretically studied using the finite element method. An analysis of the influence of the quantum dot shape (form factor) and relative size (aspect ratio) δ on the accompanying elastic fields has revealed two critical quantum dot dimensions, δc1 and δc2. For δ & δc1, the fields are independent of the quantum dot shape and aspect ratio. At δ ≥ δc2, the quantum dot top remains almost undistorted. Variation of the stress tensor component σzz (z is the quantum dot axis of symmetry) reveals a region of tensile stresses, which is located in the substrate under the quantum dot at a particular distance from the interface. Using an approximate analytical formula for the radial component of displacements, model electron microscopy images have been calculated for quantum dot islands with δ & δc1 in the InSb/InAs system. The possibility of stress relaxation occurring in the system via the formation of a prismatic interstitial dislocation loop has been considered.",
author = "Bert, {N. A.} and Kolesnikova, {A. L.} and Korolev, {I. K.} and Romanov, {A. E.} and Freidin, {A. B.} and Chaldyshev, {V. V.} and Aifantis, {E. C.}",
note = "Funding Information: ACKNOWLEDGMENTS This study was supported in part by the Russian Foundation for Basic Research (project no. 10 02 91057 NCNI_a) and the EEC (Marie Curie Project).",
year = "2011",
month = oct,
doi = "10.1134/S1063783411100052",
language = "English",
volume = "53",
pages = "2091--2102",
journal = "Physics of the Solid State",
issn = "1063-7834",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "10",

}

RIS

TY - JOUR

T1 - Elastic fields and physical properties of surface quantum dots

AU - Bert, N. A.

AU - Kolesnikova, A. L.

AU - Korolev, I. K.

AU - Romanov, A. E.

AU - Freidin, A. B.

AU - Chaldyshev, V. V.

AU - Aifantis, E. C.

N1 - Funding Information: ACKNOWLEDGMENTS This study was supported in part by the Russian Foundation for Basic Research (project no. 10 02 91057 NCNI_a) and the EEC (Marie Curie Project).

PY - 2011/10

Y1 - 2011/10

N2 - Elastic fields in a system consisting of a surface coherent axisymmetric quantum dot-island on a massive substrate have been theoretically studied using the finite element method. An analysis of the influence of the quantum dot shape (form factor) and relative size (aspect ratio) δ on the accompanying elastic fields has revealed two critical quantum dot dimensions, δc1 and δc2. For δ & δc1, the fields are independent of the quantum dot shape and aspect ratio. At δ ≥ δc2, the quantum dot top remains almost undistorted. Variation of the stress tensor component σzz (z is the quantum dot axis of symmetry) reveals a region of tensile stresses, which is located in the substrate under the quantum dot at a particular distance from the interface. Using an approximate analytical formula for the radial component of displacements, model electron microscopy images have been calculated for quantum dot islands with δ & δc1 in the InSb/InAs system. The possibility of stress relaxation occurring in the system via the formation of a prismatic interstitial dislocation loop has been considered.

AB - Elastic fields in a system consisting of a surface coherent axisymmetric quantum dot-island on a massive substrate have been theoretically studied using the finite element method. An analysis of the influence of the quantum dot shape (form factor) and relative size (aspect ratio) δ on the accompanying elastic fields has revealed two critical quantum dot dimensions, δc1 and δc2. For δ & δc1, the fields are independent of the quantum dot shape and aspect ratio. At δ ≥ δc2, the quantum dot top remains almost undistorted. Variation of the stress tensor component σzz (z is the quantum dot axis of symmetry) reveals a region of tensile stresses, which is located in the substrate under the quantum dot at a particular distance from the interface. Using an approximate analytical formula for the radial component of displacements, model electron microscopy images have been calculated for quantum dot islands with δ & δc1 in the InSb/InAs system. The possibility of stress relaxation occurring in the system via the formation of a prismatic interstitial dislocation loop has been considered.

UR - http://www.scopus.com/inward/record.url?scp=80053591111&partnerID=8YFLogxK

U2 - 10.1134/S1063783411100052

DO - 10.1134/S1063783411100052

M3 - Article

AN - SCOPUS:80053591111

VL - 53

SP - 2091

EP - 2102

JO - Physics of the Solid State

JF - Physics of the Solid State

SN - 1063-7834

IS - 10

ER -

ID: 97787556