Standard
Efficient gating of epitaxial boron nitride monolayers by substrate functionalization. / Fedorov, A.; Praveen, C. S.; Verbitskiy, N. I.; Haberer, D.; Usachov, D.; Vyalikh, D. V.; Nefedov, A.; Woell, C.; Petaccia, L.; Piccinin, S.; Sachdev, H.; Knupfer, M.; Buechner, B.; Fabris, S.; Grueneis, A.
в:
Physical Review B - Condensed Matter and Materials Physics, Том 92, № 12, 2015.
Результаты исследований: Научные публикации в периодических изданиях › статья
Harvard
Fedorov, A, Praveen, CS, Verbitskiy, NI, Haberer, D
, Usachov, D, Vyalikh, DV, Nefedov, A, Woell, C, Petaccia, L, Piccinin, S, Sachdev, H, Knupfer, M, Buechner, B, Fabris, S & Grueneis, A 2015, '
Efficient gating of epitaxial boron nitride monolayers by substrate functionalization',
Physical Review B - Condensed Matter and Materials Physics, Том. 92, № 12.
https://doi.org/10.1103/PhysRevB.92.125440
APA
Fedorov, A., Praveen, C. S., Verbitskiy, N. I., Haberer, D.
, Usachov, D., Vyalikh, D. V., Nefedov, A., Woell, C., Petaccia, L., Piccinin, S., Sachdev, H., Knupfer, M., Buechner, B., Fabris, S., & Grueneis, A. (2015).
Efficient gating of epitaxial boron nitride monolayers by substrate functionalization.
Physical Review B - Condensed Matter and Materials Physics,
92(12).
https://doi.org/10.1103/PhysRevB.92.125440
Vancouver
Author
Fedorov, A. ; Praveen, C. S. ; Verbitskiy, N. I. ; Haberer, D.
; Usachov, D. ; Vyalikh, D. V. ; Nefedov, A. ; Woell, C. ; Petaccia, L. ; Piccinin, S. ; Sachdev, H. ; Knupfer, M. ; Buechner, B. ; Fabris, S. ; Grueneis, A. /
Efficient gating of epitaxial boron nitride monolayers by substrate functionalization. в:
Physical Review B - Condensed Matter and Materials Physics. 2015 ; Том 92, № 12.
BibTeX
@article{6e662031aa364b9e8107035c41677c01,
title = "Efficient gating of epitaxial boron nitride monolayers by substrate functionalization",
author = "A. Fedorov and Praveen, {C. S.} and Verbitskiy, {N. I.} and D. Haberer and D. Usachov and Vyalikh, {D. V.} and A. Nefedov and C. Woell and L. Petaccia and S. Piccinin and H. Sachdev and M. Knupfer and B. Buechner and S. Fabris and A. Grueneis",
year = "2015",
doi = "10.1103/PhysRevB.92.125440",
language = "English",
volume = "92",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "12",
}
RIS
TY - JOUR
T1 - Efficient gating of epitaxial boron nitride monolayers by substrate functionalization
AU - Fedorov, A.
AU - Praveen, C. S.
AU - Verbitskiy, N. I.
AU - Haberer, D.
AU - Usachov, D.
AU - Vyalikh, D. V.
AU - Nefedov, A.
AU - Woell, C.
AU - Petaccia, L.
AU - Piccinin, S.
AU - Sachdev, H.
AU - Knupfer, M.
AU - Buechner, B.
AU - Fabris, S.
AU - Grueneis, A.
PY - 2015
Y1 - 2015
U2 - 10.1103/PhysRevB.92.125440
DO - 10.1103/PhysRevB.92.125440
M3 - Article
VL - 92
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 1098-0121
IS - 12
ER -
