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Efficient gating of epitaxial boron nitride monolayers by substrate functionalization. / Fedorov, A.; Praveen, C. S.; Verbitskiy, N. I.; Haberer, D.; Usachov, D.; Vyalikh, D. V.; Nefedov, A.; Woell, C.; Petaccia, L.; Piccinin, S.; Sachdev, H.; Knupfer, M.; Buechner, B.; Fabris, S.; Grueneis, A.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 92, No. 12, 2015.

Research output: Contribution to journalArticle

Harvard

Fedorov, A, Praveen, CS, Verbitskiy, NI, Haberer, D, Usachov, D, Vyalikh, DV, Nefedov, A, Woell, C, Petaccia, L, Piccinin, S, Sachdev, H, Knupfer, M, Buechner, B, Fabris, S & Grueneis, A 2015, 'Efficient gating of epitaxial boron nitride monolayers by substrate functionalization', Physical Review B - Condensed Matter and Materials Physics, vol. 92, no. 12. https://doi.org/10.1103/PhysRevB.92.125440

APA

Fedorov, A., Praveen, C. S., Verbitskiy, N. I., Haberer, D., Usachov, D., Vyalikh, D. V., Nefedov, A., Woell, C., Petaccia, L., Piccinin, S., Sachdev, H., Knupfer, M., Buechner, B., Fabris, S., & Grueneis, A. (2015). Efficient gating of epitaxial boron nitride monolayers by substrate functionalization. Physical Review B - Condensed Matter and Materials Physics, 92(12). https://doi.org/10.1103/PhysRevB.92.125440

Vancouver

Fedorov A, Praveen CS, Verbitskiy NI, Haberer D, Usachov D, Vyalikh DV et al. Efficient gating of epitaxial boron nitride monolayers by substrate functionalization. Physical Review B - Condensed Matter and Materials Physics. 2015;92(12). https://doi.org/10.1103/PhysRevB.92.125440

Author

Fedorov, A. ; Praveen, C. S. ; Verbitskiy, N. I. ; Haberer, D. ; Usachov, D. ; Vyalikh, D. V. ; Nefedov, A. ; Woell, C. ; Petaccia, L. ; Piccinin, S. ; Sachdev, H. ; Knupfer, M. ; Buechner, B. ; Fabris, S. ; Grueneis, A. / Efficient gating of epitaxial boron nitride monolayers by substrate functionalization. In: Physical Review B - Condensed Matter and Materials Physics. 2015 ; Vol. 92, No. 12.

BibTeX

@article{6e662031aa364b9e8107035c41677c01,
title = "Efficient gating of epitaxial boron nitride monolayers by substrate functionalization",
author = "A. Fedorov and Praveen, {C. S.} and Verbitskiy, {N. I.} and D. Haberer and D. Usachov and Vyalikh, {D. V.} and A. Nefedov and C. Woell and L. Petaccia and S. Piccinin and H. Sachdev and M. Knupfer and B. Buechner and S. Fabris and A. Grueneis",
year = "2015",
doi = "10.1103/PhysRevB.92.125440",
language = "English",
volume = "92",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "12",

}

RIS

TY - JOUR

T1 - Efficient gating of epitaxial boron nitride monolayers by substrate functionalization

AU - Fedorov, A.

AU - Praveen, C. S.

AU - Verbitskiy, N. I.

AU - Haberer, D.

AU - Usachov, D.

AU - Vyalikh, D. V.

AU - Nefedov, A.

AU - Woell, C.

AU - Petaccia, L.

AU - Piccinin, S.

AU - Sachdev, H.

AU - Knupfer, M.

AU - Buechner, B.

AU - Fabris, S.

AU - Grueneis, A.

PY - 2015

Y1 - 2015

U2 - 10.1103/PhysRevB.92.125440

DO - 10.1103/PhysRevB.92.125440

M3 - Article

VL - 92

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 12

ER -

ID: 3924153