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EFFECT OF THE POTENTIAL BARRIER SHAPE ON HOLE TRANSPORT IN A SURFACE INVERSION CHANNEL. / Romanov, O. V.; Yafyasov, A. M.

в: Soviet Microelectronics (English Translation of Mikroelektronika), Том 8, № 3, 01.01.1979, стр. 198-202.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Romanov, OV & Yafyasov, AM 1979, 'EFFECT OF THE POTENTIAL BARRIER SHAPE ON HOLE TRANSPORT IN A SURFACE INVERSION CHANNEL.', Soviet Microelectronics (English Translation of Mikroelektronika), Том. 8, № 3, стр. 198-202.

APA

Romanov, O. V., & Yafyasov, A. M. (1979). EFFECT OF THE POTENTIAL BARRIER SHAPE ON HOLE TRANSPORT IN A SURFACE INVERSION CHANNEL. Soviet Microelectronics (English Translation of Mikroelektronika), 8(3), 198-202.

Vancouver

Romanov OV, Yafyasov AM. EFFECT OF THE POTENTIAL BARRIER SHAPE ON HOLE TRANSPORT IN A SURFACE INVERSION CHANNEL. Soviet Microelectronics (English Translation of Mikroelektronika). 1979 Янв. 1;8(3):198-202.

Author

Romanov, O. V. ; Yafyasov, A. M. / EFFECT OF THE POTENTIAL BARRIER SHAPE ON HOLE TRANSPORT IN A SURFACE INVERSION CHANNEL. в: Soviet Microelectronics (English Translation of Mikroelektronika). 1979 ; Том 8, № 3. стр. 198-202.

BibTeX

@article{d1de31f2a4714571b6ea7bb76d91f1df,
title = "EFFECT OF THE POTENTIAL BARRIER SHAPE ON HOLE TRANSPORT IN A SURFACE INVERSION CHANNEL.",
abstract = "The results are given of experimental and theoretical investigation of surface transport processes in the valence band of silicon in MIS transistor inversion channels.",
author = "Romanov, {O. V.} and Yafyasov, {A. M.}",
year = "1979",
month = jan,
day = "1",
language = "English",
volume = "8",
pages = "198--202",
journal = "МИКРОЭЛЕКТРОНИКА",
issn = "0544-1269",
publisher = "Издательство {"}Наука{"}",
number = "3",

}

RIS

TY - JOUR

T1 - EFFECT OF THE POTENTIAL BARRIER SHAPE ON HOLE TRANSPORT IN A SURFACE INVERSION CHANNEL.

AU - Romanov, O. V.

AU - Yafyasov, A. M.

PY - 1979/1/1

Y1 - 1979/1/1

N2 - The results are given of experimental and theoretical investigation of surface transport processes in the valence band of silicon in MIS transistor inversion channels.

AB - The results are given of experimental and theoretical investigation of surface transport processes in the valence band of silicon in MIS transistor inversion channels.

UR - http://www.scopus.com/inward/record.url?scp=0018469938&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0018469938

VL - 8

SP - 198

EP - 202

JO - МИКРОЭЛЕКТРОНИКА

JF - МИКРОЭЛЕКТРОНИКА

SN - 0544-1269

IS - 3

ER -

ID: 42242993