Результаты исследований: Материалы конференций › тезисы › Рецензирование
Effect of postannealing crystallization of FE:HfO2 on dynamics of HfxSi1-xO2 formation at SiO2/FE:HfO2 interface depending on valence of doping impurity. / Konashuk, A.S. ; Filatova, E.O. ; Bugaev, A.V. ; Sakhonenkov, S.S. .
2023. Реферат от 23rd CONFERENCE ON INSULATING FILMS ON SEMICONDUCTORS, Pizzo, Италия.Результаты исследований: Материалы конференций › тезисы › Рецензирование
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TY - CONF
T1 - Effect of postannealing crystallization of FE:HfO2 on dynamics of HfxSi1-xO2 formation at SiO2/FE:HfO2 interface depending on valence of doping impurity
AU - Konashuk, A.S.
AU - Filatova, E.O.
AU - Bugaev, A.V.
AU - Sakhonenkov, S.S.
N1 - Conference code: 23
PY - 2023/6
Y1 - 2023/6
UR - https://events.dimes.unical.it/infos2023/wp-content/uploads/sites/20/2023/06/Final-program-INFOS-2023.pdf
M3 - Abstract
Y2 - 27 June 2023 through 30 June 2023
ER -
ID: 107329609