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Effect of postannealing crystallization of FE:HfO2 on dynamics of HfxSi1-xO2 formation at SiO2/FE:HfO2 interface depending on valence of doping impurity. / Konashuk, A.S. ; Filatova, E.O. ; Bugaev, A.V. ; Sakhonenkov, S.S. .

2023. Реферат от 23rd CONFERENCE ON INSULATING FILMS ON SEMICONDUCTORS, Pizzo, Италия.

Результаты исследований: Материалы конференцийтезисыРецензирование

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BibTeX

@conference{0ebe404e953842c29ee809362a8672ea,
title = "Effect of postannealing crystallization of FE:HfO2 on dynamics of HfxSi1-xO2 formation at SiO2/FE:HfO2 interface depending on valence of doping impurity",
author = "A.S. Konashuk and E.O. Filatova and A.V. Bugaev and S.S. Sakhonenkov",
year = "2023",
month = jun,
language = "English",
note = "null ; Conference date: 27-06-2023 Through 30-06-2023",
url = "https://events.dimes.unical.it/infos2023/",

}

RIS

TY - CONF

T1 - Effect of postannealing crystallization of FE:HfO2 on dynamics of HfxSi1-xO2 formation at SiO2/FE:HfO2 interface depending on valence of doping impurity

AU - Konashuk, A.S.

AU - Filatova, E.O.

AU - Bugaev, A.V.

AU - Sakhonenkov, S.S.

N1 - Conference code: 23

PY - 2023/6

Y1 - 2023/6

UR - https://events.dimes.unical.it/infos2023/wp-content/uploads/sites/20/2023/06/Final-program-INFOS-2023.pdf

M3 - Abstract

Y2 - 27 June 2023 through 30 June 2023

ER -

ID: 107329609