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EFFECT OF FLUORIDE IONS ON THE PROPERTIES OF AN SI-SiO2 STRUCTURE. / Tarantov, Yu A.; Baraban, A. P.; Konorov, P. P.

в: Soviet Microelectronics (English Translation of Mikroelektronika), Том 8, № 2, 01.01.1979, стр. 136-137.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Tarantov, YA, Baraban, AP & Konorov, PP 1979, 'EFFECT OF FLUORIDE IONS ON THE PROPERTIES OF AN SI-SiO2 STRUCTURE.', Soviet Microelectronics (English Translation of Mikroelektronika), Том. 8, № 2, стр. 136-137.

APA

Tarantov, Y. A., Baraban, A. P., & Konorov, P. P. (1979). EFFECT OF FLUORIDE IONS ON THE PROPERTIES OF AN SI-SiO2 STRUCTURE. Soviet Microelectronics (English Translation of Mikroelektronika), 8(2), 136-137.

Vancouver

Tarantov YA, Baraban AP, Konorov PP. EFFECT OF FLUORIDE IONS ON THE PROPERTIES OF AN SI-SiO2 STRUCTURE. Soviet Microelectronics (English Translation of Mikroelektronika). 1979 Янв. 1;8(2):136-137.

Author

Tarantov, Yu A. ; Baraban, A. P. ; Konorov, P. P. / EFFECT OF FLUORIDE IONS ON THE PROPERTIES OF AN SI-SiO2 STRUCTURE. в: Soviet Microelectronics (English Translation of Mikroelektronika). 1979 ; Том 8, № 2. стр. 136-137.

BibTeX

@article{c694d37dc1304a13acb953826aa6aea8,
title = "EFFECT OF FLUORIDE IONS ON THE PROPERTIES OF AN SI-SiO2 STRUCTURE.",
abstract = "A study was conducted of the effect of fluoride ions on the properties of an Si-SiO//2 structure in which the SiO//2 layer is doped with fluoride ions from electrolyte. It was found that fluoride ions have a significant effect on the properties of thermally oxidized Si and this includes the formation of a negative charge in the volume of the oxide. By changing the polarization conditions of the Si-SiO//2 structure in an electrolyte containing fluoride ions, it is possible to control the magnitude and spatial distribution of this charge.",
author = "Tarantov, {Yu A.} and Baraban, {A. P.} and Konorov, {P. P.}",
year = "1979",
month = jan,
day = "1",
language = "English",
volume = "8",
pages = "136--137",
journal = "МИКРОЭЛЕКТРОНИКА",
issn = "0544-1269",
publisher = "Издательство {"}Наука{"}",
number = "2",

}

RIS

TY - JOUR

T1 - EFFECT OF FLUORIDE IONS ON THE PROPERTIES OF AN SI-SiO2 STRUCTURE.

AU - Tarantov, Yu A.

AU - Baraban, A. P.

AU - Konorov, P. P.

PY - 1979/1/1

Y1 - 1979/1/1

N2 - A study was conducted of the effect of fluoride ions on the properties of an Si-SiO//2 structure in which the SiO//2 layer is doped with fluoride ions from electrolyte. It was found that fluoride ions have a significant effect on the properties of thermally oxidized Si and this includes the formation of a negative charge in the volume of the oxide. By changing the polarization conditions of the Si-SiO//2 structure in an electrolyte containing fluoride ions, it is possible to control the magnitude and spatial distribution of this charge.

AB - A study was conducted of the effect of fluoride ions on the properties of an Si-SiO//2 structure in which the SiO//2 layer is doped with fluoride ions from electrolyte. It was found that fluoride ions have a significant effect on the properties of thermally oxidized Si and this includes the formation of a negative charge in the volume of the oxide. By changing the polarization conditions of the Si-SiO//2 structure in an electrolyte containing fluoride ions, it is possible to control the magnitude and spatial distribution of this charge.

UR - http://www.scopus.com/inward/record.url?scp=0018446555&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0018446555

VL - 8

SP - 136

EP - 137

JO - МИКРОЭЛЕКТРОНИКА

JF - МИКРОЭЛЕКТРОНИКА

SN - 0544-1269

IS - 2

ER -

ID: 47620469