Research output: Contribution to journal › Article › peer-review
EFFECT OF FLUORIDE IONS ON THE PROPERTIES OF AN SI-SiO2 STRUCTURE. / Tarantov, Yu A.; Baraban, A. P.; Konorov, P. P.
In: Soviet Microelectronics (English Translation of Mikroelektronika), Vol. 8, No. 2, 01.01.1979, p. 136-137.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - EFFECT OF FLUORIDE IONS ON THE PROPERTIES OF AN SI-SiO2 STRUCTURE.
AU - Tarantov, Yu A.
AU - Baraban, A. P.
AU - Konorov, P. P.
PY - 1979/1/1
Y1 - 1979/1/1
N2 - A study was conducted of the effect of fluoride ions on the properties of an Si-SiO//2 structure in which the SiO//2 layer is doped with fluoride ions from electrolyte. It was found that fluoride ions have a significant effect on the properties of thermally oxidized Si and this includes the formation of a negative charge in the volume of the oxide. By changing the polarization conditions of the Si-SiO//2 structure in an electrolyte containing fluoride ions, it is possible to control the magnitude and spatial distribution of this charge.
AB - A study was conducted of the effect of fluoride ions on the properties of an Si-SiO//2 structure in which the SiO//2 layer is doped with fluoride ions from electrolyte. It was found that fluoride ions have a significant effect on the properties of thermally oxidized Si and this includes the formation of a negative charge in the volume of the oxide. By changing the polarization conditions of the Si-SiO//2 structure in an electrolyte containing fluoride ions, it is possible to control the magnitude and spatial distribution of this charge.
UR - http://www.scopus.com/inward/record.url?scp=0018446555&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0018446555
VL - 8
SP - 136
EP - 137
JO - МИКРОЭЛЕКТРОНИКА
JF - МИКРОЭЛЕКТРОНИКА
SN - 0544-1269
IS - 2
ER -
ID: 47620469