Standard

Effect of deposition technique on chemical bonding and amount of porogen residues in organosilicate glass. / Konashuk, A.; Filatova, E.; Sakhonenkov, S.; Afanas'ev, V.

в: Microelectronic Engineering, Том 178, 25.06.2017, стр. 209-212.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Konashuk, A, Filatova, E, Sakhonenkov, S & Afanas'ev, V 2017, 'Effect of deposition technique on chemical bonding and amount of porogen residues in organosilicate glass', Microelectronic Engineering, Том. 178, стр. 209-212. https://doi.org/10.1016/j.mee.2017.05.038

APA

Konashuk, A., Filatova, E., Sakhonenkov, S., & Afanas'ev, V. (2017). Effect of deposition technique on chemical bonding and amount of porogen residues in organosilicate glass. Microelectronic Engineering, 178, 209-212. https://doi.org/10.1016/j.mee.2017.05.038

Vancouver

Konashuk A, Filatova E, Sakhonenkov S, Afanas'ev V. Effect of deposition technique on chemical bonding and amount of porogen residues in organosilicate glass. Microelectronic Engineering. 2017 Июнь 25;178:209-212. https://doi.org/10.1016/j.mee.2017.05.038

Author

Konashuk, A. ; Filatova, E. ; Sakhonenkov, S. ; Afanas'ev, V. / Effect of deposition technique on chemical bonding and amount of porogen residues in organosilicate glass. в: Microelectronic Engineering. 2017 ; Том 178. стр. 209-212.

BibTeX

@article{e4651ab887e445fe9356d27342661e33,
title = "Effect of deposition technique on chemical bonding and amount of porogen residues in organosilicate glass",
abstract = "Impact of deposition technique on the chemical bonding in low-κ organosilicate glass (OSG) films and on porogen residues was studied using near edge X-ray absorption fine structure (NEXAFS) and internal photoemission (IPE) spectroscopy. The carried analysis reveals that self-assembly technology (SAT) allows one to obtain OSG-films without carbon residues, i.e. with “a clean bandgap”. Conventional PECVD film contains appreciable amount of carbon clusters, which account for gap states responsible for charge trapping and leakage current.",
keywords = "Internal photoemission, Leakage current, NEXAFS, Organosilicate glass, Porogen residues",
author = "A. Konashuk and E. Filatova and S. Sakhonenkov and V. Afanas'ev",
year = "2017",
month = jun,
day = "25",
doi = "10.1016/j.mee.2017.05.038",
language = "English",
volume = "178",
pages = "209--212",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Effect of deposition technique on chemical bonding and amount of porogen residues in organosilicate glass

AU - Konashuk, A.

AU - Filatova, E.

AU - Sakhonenkov, S.

AU - Afanas'ev, V.

PY - 2017/6/25

Y1 - 2017/6/25

N2 - Impact of deposition technique on the chemical bonding in low-κ organosilicate glass (OSG) films and on porogen residues was studied using near edge X-ray absorption fine structure (NEXAFS) and internal photoemission (IPE) spectroscopy. The carried analysis reveals that self-assembly technology (SAT) allows one to obtain OSG-films without carbon residues, i.e. with “a clean bandgap”. Conventional PECVD film contains appreciable amount of carbon clusters, which account for gap states responsible for charge trapping and leakage current.

AB - Impact of deposition technique on the chemical bonding in low-κ organosilicate glass (OSG) films and on porogen residues was studied using near edge X-ray absorption fine structure (NEXAFS) and internal photoemission (IPE) spectroscopy. The carried analysis reveals that self-assembly technology (SAT) allows one to obtain OSG-films without carbon residues, i.e. with “a clean bandgap”. Conventional PECVD film contains appreciable amount of carbon clusters, which account for gap states responsible for charge trapping and leakage current.

KW - Internal photoemission

KW - Leakage current

KW - NEXAFS

KW - Organosilicate glass

KW - Porogen residues

UR - http://www.mendeley.com/research/effect-deposition-technique-chemical-bonding-amount-porogen-residues-organosilicate-glass

U2 - 10.1016/j.mee.2017.05.038

DO - 10.1016/j.mee.2017.05.038

M3 - Article

VL - 178

SP - 209

EP - 212

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -

ID: 7747008