Effect of Arsenic Depletion on the Silicon Doping of Vapor-Liquid-Solid GaAs Nanowires

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Effect of Arsenic Depletion on the Silicon Doping of Vapor-Liquid-Solid GaAs Nanowires. / Dubrovskii, Vladimir G. ; Hijazi, Hadi.

в: Physica Status Solidi - Rapid Research Letetrs, Том 14, № 6, 2000129, 01.06.2020.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

BibTeX

@article{7b2da344006945ac88e7ce47b871e954,

title = "Effect of Arsenic Depletion on the Silicon Doping of Vapor-Liquid-Solid GaAs Nanowires",

abstract = "It is well known that chemical potential driving the vapor–liquid–solid growth of nanowires oscillates in synchronization with the monolayer growth. In III–V nanowires, this occurs due to depletion of group V atoms in a catalyst droplet. The amphoteric behavior of silicon doping, which often changes from n‐type in planar GaAs layers to p‐type in nanowires, is attributed to low arsenic concentrations. Herein, we present an analytical model which quantifies the doping oscillations over the monolayer formation cycle, and its impact on the electron‐to‐hole ratio for the silicon doping of GaAs nanowires. It is shown that arsenic depletion can easily double the amphoteric effect and strongly favor the tendency for p‐type doping. On a more general ground, the nanowire doping process appears highly sensitive to the chemical potential oscillations related to a restricted amount of material in a nanoscale catalyst.",

keywords = "arsenic depletion, chemical potential oscillations, Si doping, vapor–liquid–solid growth, III–V nanowires, CRYSTAL PHASE, III-V nanowires, vapor-liquid-solid growth, GROWTH",

author = "Dubrovskii, {Vladimir G.} and Hadi Hijazi",

note = "Publisher Copyright: {\textcopyright} 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

year = "2020",

month = jun,

day = "1",

doi = "10.1002/pssr.202000129",

language = "English",

volume = "14",

journal = "Physica Status Solidi - Rapid Research Letetrs",

issn = "1862-6254",

publisher = "Wiley-Blackwell",

number = "6",

}

RIS

TY - JOUR

T1 - Effect of Arsenic Depletion on the Silicon Doping of Vapor-Liquid-Solid GaAs Nanowires

AU - Dubrovskii, Vladimir G.

AU - Hijazi, Hadi

PY - 2020/6/1

Y1 - 2020/6/1

N2 - It is well known that chemical potential driving the vapor–liquid–solid growth of nanowires oscillates in synchronization with the monolayer growth. In III–V nanowires, this occurs due to depletion of group V atoms in a catalyst droplet. The amphoteric behavior of silicon doping, which often changes from n‐type in planar GaAs layers to p‐type in nanowires, is attributed to low arsenic concentrations. Herein, we present an analytical model which quantifies the doping oscillations over the monolayer formation cycle, and its impact on the electron‐to‐hole ratio for the silicon doping of GaAs nanowires. It is shown that arsenic depletion can easily double the amphoteric effect and strongly favor the tendency for p‐type doping. On a more general ground, the nanowire doping process appears highly sensitive to the chemical potential oscillations related to a restricted amount of material in a nanoscale catalyst.

AB - It is well known that chemical potential driving the vapor–liquid–solid growth of nanowires oscillates in synchronization with the monolayer growth. In III–V nanowires, this occurs due to depletion of group V atoms in a catalyst droplet. The amphoteric behavior of silicon doping, which often changes from n‐type in planar GaAs layers to p‐type in nanowires, is attributed to low arsenic concentrations. Herein, we present an analytical model which quantifies the doping oscillations over the monolayer formation cycle, and its impact on the electron‐to‐hole ratio for the silicon doping of GaAs nanowires. It is shown that arsenic depletion can easily double the amphoteric effect and strongly favor the tendency for p‐type doping. On a more general ground, the nanowire doping process appears highly sensitive to the chemical potential oscillations related to a restricted amount of material in a nanoscale catalyst.

KW - arsenic depletion

KW - chemical potential oscillations

KW - Si doping

KW - vapor–liquid–solid growth

KW - III–V nanowires

KW - CRYSTAL PHASE

KW - III-V nanowires

KW - vapor-liquid-solid growth

KW - GROWTH

UR - http://www.scopus.com/inward/record.url?scp=85083104845&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/d4f6bd6e-00ca-340e-afbe-7e71ca148bf2/

U2 - 10.1002/pssr.202000129

DO - 10.1002/pssr.202000129

M3 - Article

VL - 14

JO - Physica Status Solidi - Rapid Research Letetrs

JF - Physica Status Solidi - Rapid Research Letetrs

SN - 1862-6254

IS - 6

M1 - 2000129

ER -

ID: 70923881

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