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Dislocation luminescence and electrical properties of dislocation network produced by silicon direct wafer bonding. / Bondarenko, Anton; Vyvenko, Oleg; Bazlov, Nikolay; Kononchuk, Oleg.

в: Physica B: Condensed Matter, Том 404, № 23-24, 15.12.2009, стр. 4608-4611.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Bondarenko, A, Vyvenko, O, Bazlov, N & Kononchuk, O 2009, 'Dislocation luminescence and electrical properties of dislocation network produced by silicon direct wafer bonding', Physica B: Condensed Matter, Том. 404, № 23-24, стр. 4608-4611. https://doi.org/10.1016/j.physb.2009.08.143

APA

Bondarenko, A., Vyvenko, O., Bazlov, N., & Kononchuk, O. (2009). Dislocation luminescence and electrical properties of dislocation network produced by silicon direct wafer bonding. Physica B: Condensed Matter, 404(23-24), 4608-4611. https://doi.org/10.1016/j.physb.2009.08.143

Vancouver

Bondarenko A, Vyvenko O, Bazlov N, Kononchuk O. Dislocation luminescence and electrical properties of dislocation network produced by silicon direct wafer bonding. Physica B: Condensed Matter. 2009 Дек. 15;404(23-24):4608-4611. https://doi.org/10.1016/j.physb.2009.08.143

Author

Bondarenko, Anton ; Vyvenko, Oleg ; Bazlov, Nikolay ; Kononchuk, Oleg. / Dislocation luminescence and electrical properties of dislocation network produced by silicon direct wafer bonding. в: Physica B: Condensed Matter. 2009 ; Том 404, № 23-24. стр. 4608-4611.

BibTeX

@article{e30cc02b9d794751bfa9ace0b6d02f97,
title = "Dislocation luminescence and electrical properties of dislocation network produced by silicon direct wafer bonding",
abstract = "Cathodoluminescent (CL) and electrical properties of the dislocation network (DN) produced by direct silicon wafer bonding were investigated. A strong impact of the electric field on the spectrum shape and the intensity of dislocation related CL of the DN built into space charge region (SCR) of Schottky-diode was found. Correlations between the characteristic features of the dependences of CL, dark current, electron beam induced current (EBIC) and capacitance on the applied bias were established. The energy diagram explaining obtained results is proposed.",
keywords = "Cathodoluminescence, Dislocation luminescence, Dislocation networks",
author = "Anton Bondarenko and Oleg Vyvenko and Nikolay Bazlov and Oleg Kononchuk",
year = "2009",
month = dec,
day = "15",
doi = "10.1016/j.physb.2009.08.143",
language = "English",
volume = "404",
pages = "4608--4611",
journal = "Physica B: Condensed Matter",
issn = "0921-4526",
publisher = "Elsevier",
number = "23-24",

}

RIS

TY - JOUR

T1 - Dislocation luminescence and electrical properties of dislocation network produced by silicon direct wafer bonding

AU - Bondarenko, Anton

AU - Vyvenko, Oleg

AU - Bazlov, Nikolay

AU - Kononchuk, Oleg

PY - 2009/12/15

Y1 - 2009/12/15

N2 - Cathodoluminescent (CL) and electrical properties of the dislocation network (DN) produced by direct silicon wafer bonding were investigated. A strong impact of the electric field on the spectrum shape and the intensity of dislocation related CL of the DN built into space charge region (SCR) of Schottky-diode was found. Correlations between the characteristic features of the dependences of CL, dark current, electron beam induced current (EBIC) and capacitance on the applied bias were established. The energy diagram explaining obtained results is proposed.

AB - Cathodoluminescent (CL) and electrical properties of the dislocation network (DN) produced by direct silicon wafer bonding were investigated. A strong impact of the electric field on the spectrum shape and the intensity of dislocation related CL of the DN built into space charge region (SCR) of Schottky-diode was found. Correlations between the characteristic features of the dependences of CL, dark current, electron beam induced current (EBIC) and capacitance on the applied bias were established. The energy diagram explaining obtained results is proposed.

KW - Cathodoluminescence

KW - Dislocation luminescence

KW - Dislocation networks

UR - http://www.scopus.com/inward/record.url?scp=74349100864&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2009.08.143

DO - 10.1016/j.physb.2009.08.143

M3 - Article

AN - SCOPUS:74349100864

VL - 404

SP - 4608

EP - 4611

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

IS - 23-24

ER -

ID: 51104948