Directional Radiation from GaAs quantum dots in AlGaAs nanowires

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Directional Radiation from GaAs quantum dots in AlGaAs nanowires. / Reznik, R. R.; Morozov, K. M.; Krestnikov, I. L.; Kotlyar, K. P.; Soshnikov, I. P.; Leandro, L.; Akopian, N.; Cirlin, G. E.

в: Technical Physics Letters, Том 47, № 5, 05.2021, стр. 405-408.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Author

Reznik, R. R. ; Morozov, K. M. ; Krestnikov, I. L. ; Kotlyar, K. P. ; Soshnikov, I. P. ; Leandro, L. ; Akopian, N. ; Cirlin, G. E. / Directional Radiation from GaAs quantum dots in AlGaAs nanowires. в: Technical Physics Letters. 2021 ; Том 47, № 5. стр. 405-408.

BibTeX

@article{9df8b21b2d3b4d8f918240f4196ba40c,

title = "Directional Radiation from GaAs quantum dots in AlGaAs nanowires",

abstract = "Abstract: We present the results on experimental studies of the directional radiation from GaAs quantum dots in AlGaAs nanowires grown by molecular beam epitaxy technique on silicon surface. It was shown that the radiation intensity from GaAs quantum dots in the direction of nanowires growth is 2 orders of magnitude higher than the intensity of radiation in the perpendicular direction.",

keywords = "directional radiation, microphotoluminescence, molecular beam epitaxy, nanowires, quantum dots, semiconductors",

author = "Reznik, {R. R.} and Morozov, {K. M.} and Krestnikov, {I. L.} and Kotlyar, {K. P.} and Soshnikov, {I. P.} and L. Leandro and N. Akopian and Cirlin, {G. E.}",

note = "Publisher Copyright: {\textcopyright} 2021, Pleiades Publishing, Ltd.",

year = "2021",

month = may,

doi = "10.1134/S106378502104026X",

language = "English",

volume = "47",

pages = "405--408",

journal = "Technical Physics Letters",

issn = "1063-7850",

publisher = "МАИК {"}Наука/Интерпериодика{"}",

number = "5",

}

RIS

TY - JOUR

T1 - Directional Radiation from GaAs quantum dots in AlGaAs nanowires

AU - Reznik, R. R.

AU - Morozov, K. M.

AU - Krestnikov, I. L.

AU - Kotlyar, K. P.

AU - Soshnikov, I. P.

AU - Leandro, L.

AU - Akopian, N.

AU - Cirlin, G. E.

PY - 2021/5

Y1 - 2021/5

N2 - Abstract: We present the results on experimental studies of the directional radiation from GaAs quantum dots in AlGaAs nanowires grown by molecular beam epitaxy technique on silicon surface. It was shown that the radiation intensity from GaAs quantum dots in the direction of nanowires growth is 2 orders of magnitude higher than the intensity of radiation in the perpendicular direction.

AB - Abstract: We present the results on experimental studies of the directional radiation from GaAs quantum dots in AlGaAs nanowires grown by molecular beam epitaxy technique on silicon surface. It was shown that the radiation intensity from GaAs quantum dots in the direction of nanowires growth is 2 orders of magnitude higher than the intensity of radiation in the perpendicular direction.

KW - directional radiation

KW - microphotoluminescence

KW - molecular beam epitaxy

KW - nanowires

KW - quantum dots

KW - semiconductors

UR - http://www.scopus.com/inward/record.url?scp=85121302918&partnerID=8YFLogxK

U2 - 10.1134/S106378502104026X

DO - 10.1134/S106378502104026X

M3 - Article

AN - SCOPUS:85121302918

VL - 47

SP - 405

EP - 408

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 5

ER -

ID: 97044341

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