Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Direct observation of amorphous to crystalline phase transitions in Ge–Sb–Te thin films by grazing incidence X-ray diffraction method. / Kozyukhin, Sergey A.; Nikolaev, Ilja I.; Lazarenko, Petr I.; Valkovskiy, Gleb A.; Konovalov, Oleg; Kolobov, Alexander V.; Grigoryeva, Natalia A.
в: Journal of Materials Science: Materials in Electronics, Том 31, № 13, 01.07.2020, стр. 10196-10206.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Direct observation of amorphous to crystalline phase transitions in Ge–Sb–Te thin films by grazing incidence X-ray diffraction method
AU - Kozyukhin, Sergey A.
AU - Nikolaev, Ilja I.
AU - Lazarenko, Petr I.
AU - Valkovskiy, Gleb A.
AU - Konovalov, Oleg
AU - Kolobov, Alexander V.
AU - Grigoryeva, Natalia A.
N1 - Funding Information: The study was carried out with the financial support of a Grant from the Russian Foundation for Basic Research (Project No. 20-03-00379). The authors are grateful to the staff of the Interdisciplinary Resource Center for Nanotechnology and the Center of X-ray diffraction studies at the Research park at the Saint Petersburg State University for preliminary research of Ge–Sb–Te films, as well as Saint Petersburg State University for financial support (Activity 6 - Grant for academic mobility 2018). Special thanks from I. I. Nikolaev for a personal scholarship from Petersburg Nuclear Physics Institute named by B.P. Konstantinov of NRC ≪ \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${\ll }$$\end{document} Kurchatov Institute ≫ \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\gg$$\end{document} (2017-2019). AVK acknowledges partial support of this work by the Ministry of Science and Higher Education of the Russian Federation (Project No. FSZN-2020-0026). The authors are grateful to the European Synchrotron Radiation Facility for the opportunity to carry out of the diffraction measurements. Publisher Copyright: © 2020, Springer Science+Business Media, LLC, part of Springer Nature. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2020/7/1
Y1 - 2020/7/1
N2 - Ge–Sb–Te (GST)-based PCM alloys are currently used in optical data storage. The crystallization of GST materials is the rate-limiting step for these devices, hence a deeper knowledge of the crystallization mechanism is crucial for insightful development of faster devices. In the present work, the diffraction patterns for GST-225 thin films are studied using the in situ Grazing Incidence X-ray Diffraction method upon heating. It is shown that initial amorphous film in the temperature range from 120 to 140 °C is crystallized into two phases-cubic GST-225 (Fm3 ¯ m), and trigonal GST-147 (P3 ¯ m1). The crystallized film is stressed and highly textured, and should be characterized by the value of the lattice parameters averaged over all crystallographic planes. The structural transition of GST-225 from cubic to trigonal phase begins at T > 180 °C. The appearance of large-scale inhomogeneities in GST-225 film at T ≥ 100 °C indicates that the process of rearrangement of atoms Ge, Sb, and Te in the as-deposited amorphous film begins long before the onset of crystallization.
AB - Ge–Sb–Te (GST)-based PCM alloys are currently used in optical data storage. The crystallization of GST materials is the rate-limiting step for these devices, hence a deeper knowledge of the crystallization mechanism is crucial for insightful development of faster devices. In the present work, the diffraction patterns for GST-225 thin films are studied using the in situ Grazing Incidence X-ray Diffraction method upon heating. It is shown that initial amorphous film in the temperature range from 120 to 140 °C is crystallized into two phases-cubic GST-225 (Fm3 ¯ m), and trigonal GST-147 (P3 ¯ m1). The crystallized film is stressed and highly textured, and should be characterized by the value of the lattice parameters averaged over all crystallographic planes. The structural transition of GST-225 from cubic to trigonal phase begins at T > 180 °C. The appearance of large-scale inhomogeneities in GST-225 film at T ≥ 100 °C indicates that the process of rearrangement of atoms Ge, Sb, and Te in the as-deposited amorphous film begins long before the onset of crystallization.
UR - http://www.scopus.com/inward/record.url?scp=85085336086&partnerID=8YFLogxK
U2 - 10.1007/s10854-020-03565-7
DO - 10.1007/s10854-020-03565-7
M3 - Article
AN - SCOPUS:85085336086
VL - 31
SP - 10196
EP - 10206
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
SN - 0957-4522
IS - 13
ER -
ID: 73243527