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Direct observation of amorphous to crystalline phase transitions in Ge–Sb–Te thin films by grazing incidence X-ray diffraction method. / Kozyukhin, Sergey A.; Nikolaev, Ilja I.; Lazarenko, Petr I.; Valkovskiy, Gleb A.; Konovalov, Oleg; Kolobov, Alexander V.; Grigoryeva, Natalia A.

In: Journal of Materials Science: Materials in Electronics, Vol. 31, No. 13, 01.07.2020, p. 10196-10206.

Research output: Contribution to journal › Article › peer-review

Harvard

Kozyukhin, SA, Nikolaev, II, Lazarenko, PI, Valkovskiy, GA, Konovalov, O, Kolobov, AV & Grigoryeva, NA 2020, 'Direct observation of amorphous to crystalline phase transitions in Ge–Sb–Te thin films by grazing incidence X-ray diffraction method', Journal of Materials Science: Materials in Electronics, vol. 31, no. 13, pp. 10196-10206. https://doi.org/10.1007/s10854-020-03565-7

APA

Kozyukhin, S. A., Nikolaev, I. I., Lazarenko, P. I., Valkovskiy, G. A., Konovalov, O., Kolobov, A. V., & Grigoryeva, N. A. (2020). Direct observation of amorphous to crystalline phase transitions in Ge–Sb–Te thin films by grazing incidence X-ray diffraction method. Journal of Materials Science: Materials in Electronics, 31(13), 10196-10206. https://doi.org/10.1007/s10854-020-03565-7

Vancouver

Kozyukhin SA, Nikolaev II, Lazarenko PI, Valkovskiy GA, Konovalov O, Kolobov AV et al. Direct observation of amorphous to crystalline phase transitions in Ge–Sb–Te thin films by grazing incidence X-ray diffraction method. Journal of Materials Science: Materials in Electronics. 2020 Jul 1;31(13):10196-10206. https://doi.org/10.1007/s10854-020-03565-7

Author

Kozyukhin, Sergey A. ; Nikolaev, Ilja I. ; Lazarenko, Petr I. ; Valkovskiy, Gleb A. ; Konovalov, Oleg ; Kolobov, Alexander V. ; Grigoryeva, Natalia A. / Direct observation of amorphous to crystalline phase transitions in Ge–Sb–Te thin films by grazing incidence X-ray diffraction method. In: Journal of Materials Science: Materials in Electronics. 2020 ; Vol. 31, No. 13. pp. 10196-10206.

BibTeX

@article{7df24e2dcd5c4d0e9e10638d26b6ec65,
title = "Direct observation of amorphous to crystalline phase transitions in Ge–Sb–Te thin films by grazing incidence X-ray diffraction method",
abstract = "Ge–Sb–Te (GST)-based PCM alloys are currently used in optical data storage. The crystallization of GST materials is the rate-limiting step for these devices, hence a deeper knowledge of the crystallization mechanism is crucial for insightful development of faster devices. In the present work, the diffraction patterns for GST-225 thin films are studied using the in situ Grazing Incidence X-ray Diffraction method upon heating. It is shown that initial amorphous film in the temperature range from 120 to 140 °C is crystallized into two phases-cubic GST-225 (Fm3 ¯ m), and trigonal GST-147 (P3 ¯ m1). The crystallized film is stressed and highly textured, and should be characterized by the value of the lattice parameters averaged over all crystallographic planes. The structural transition of GST-225 from cubic to trigonal phase begins at T > 180 °C. The appearance of large-scale inhomogeneities in GST-225 film at T ≥ 100 °C indicates that the process of rearrangement of atoms Ge, Sb, and Te in the as-deposited amorphous film begins long before the onset of crystallization.",
author = "Kozyukhin, {Sergey A.} and Nikolaev, {Ilja I.} and Lazarenko, {Petr I.} and Valkovskiy, {Gleb A.} and Oleg Konovalov and Kolobov, {Alexander V.} and Grigoryeva, {Natalia A.}",
note = "Funding Information: The study was carried out with the financial support of a Grant from the Russian Foundation for Basic Research (Project No. 20-03-00379). The authors are grateful to the staff of the Interdisciplinary Resource Center for Nanotechnology and the Center of X-ray diffraction studies at the Research park at the Saint Petersburg State University for preliminary research of Ge–Sb–Te films, as well as Saint Petersburg State University for financial support (Activity 6 - Grant for academic mobility 2018). Special thanks from I. I. Nikolaev for a personal scholarship from Petersburg Nuclear Physics Institute named by B.P. Konstantinov of NRC ≪ \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${\ll }$$\end{document} Kurchatov Institute ≫ \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\gg$$\end{document} (2017-2019). AVK acknowledges partial support of this work by the Ministry of Science and Higher Education of the Russian Federation (Project No. FSZN-2020-0026). The authors are grateful to the European Synchrotron Radiation Facility for the opportunity to carry out of the diffraction measurements. Publisher Copyright: {\textcopyright} 2020, Springer Science+Business Media, LLC, part of Springer Nature. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",
year = "2020",
month = jul,
day = "1",
doi = "10.1007/s10854-020-03565-7",
language = "English",
volume = "31",
pages = "10196--10206",
journal = "Journal of Materials Science: Materials in Electronics",
issn = "0957-4522",
publisher = "Springer Nature",
number = "13",

}

RIS

TY - JOUR

T1 - Direct observation of amorphous to crystalline phase transitions in Ge–Sb–Te thin films by grazing incidence X-ray diffraction method

AU - Kozyukhin, Sergey A.

AU - Nikolaev, Ilja I.

AU - Lazarenko, Petr I.

AU - Valkovskiy, Gleb A.

AU - Konovalov, Oleg

AU - Kolobov, Alexander V.

AU - Grigoryeva, Natalia A.

N1 - Funding Information: The study was carried out with the financial support of a Grant from the Russian Foundation for Basic Research (Project No. 20-03-00379). The authors are grateful to the staff of the Interdisciplinary Resource Center for Nanotechnology and the Center of X-ray diffraction studies at the Research park at the Saint Petersburg State University for preliminary research of Ge–Sb–Te films, as well as Saint Petersburg State University for financial support (Activity 6 - Grant for academic mobility 2018). Special thanks from I. I. Nikolaev for a personal scholarship from Petersburg Nuclear Physics Institute named by B.P. Konstantinov of NRC ≪ \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${\ll }$$\end{document} Kurchatov Institute ≫ \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\gg$$\end{document} (2017-2019). AVK acknowledges partial support of this work by the Ministry of Science and Higher Education of the Russian Federation (Project No. FSZN-2020-0026). The authors are grateful to the European Synchrotron Radiation Facility for the opportunity to carry out of the diffraction measurements. Publisher Copyright: © 2020, Springer Science+Business Media, LLC, part of Springer Nature. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2020/7/1

Y1 - 2020/7/1

N2 - Ge–Sb–Te (GST)-based PCM alloys are currently used in optical data storage. The crystallization of GST materials is the rate-limiting step for these devices, hence a deeper knowledge of the crystallization mechanism is crucial for insightful development of faster devices. In the present work, the diffraction patterns for GST-225 thin films are studied using the in situ Grazing Incidence X-ray Diffraction method upon heating. It is shown that initial amorphous film in the temperature range from 120 to 140 °C is crystallized into two phases-cubic GST-225 (Fm3 ¯ m), and trigonal GST-147 (P3 ¯ m1). The crystallized film is stressed and highly textured, and should be characterized by the value of the lattice parameters averaged over all crystallographic planes. The structural transition of GST-225 from cubic to trigonal phase begins at T > 180 °C. The appearance of large-scale inhomogeneities in GST-225 film at T ≥ 100 °C indicates that the process of rearrangement of atoms Ge, Sb, and Te in the as-deposited amorphous film begins long before the onset of crystallization.

AB - Ge–Sb–Te (GST)-based PCM alloys are currently used in optical data storage. The crystallization of GST materials is the rate-limiting step for these devices, hence a deeper knowledge of the crystallization mechanism is crucial for insightful development of faster devices. In the present work, the diffraction patterns for GST-225 thin films are studied using the in situ Grazing Incidence X-ray Diffraction method upon heating. It is shown that initial amorphous film in the temperature range from 120 to 140 °C is crystallized into two phases-cubic GST-225 (Fm3 ¯ m), and trigonal GST-147 (P3 ¯ m1). The crystallized film is stressed and highly textured, and should be characterized by the value of the lattice parameters averaged over all crystallographic planes. The structural transition of GST-225 from cubic to trigonal phase begins at T > 180 °C. The appearance of large-scale inhomogeneities in GST-225 film at T ≥ 100 °C indicates that the process of rearrangement of atoms Ge, Sb, and Te in the as-deposited amorphous film begins long before the onset of crystallization.

UR - http://www.scopus.com/inward/record.url?scp=85085336086&partnerID=8YFLogxK

U2 - 10.1007/s10854-020-03565-7

DO - 10.1007/s10854-020-03565-7

M3 - Article

AN - SCOPUS:85085336086

VL - 31

SP - 10196

EP - 10206

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

SN - 0957-4522

IS - 13

ER -

ID: 73243527