Control of (Al,Ga)P Composition in Self-Catalyzed Nanowire Growth

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Control of (Al,Ga)P Composition in Self-Catalyzed Nanowire Growth. / Bolshakov, Alexey D. ; Berdnikov, Yu.S. ; Sibirev, Nickolay V. ; Fedorov, Vladimir ; Shtrom, Igor V. .

в: ФИЗИКА И МЕХАНИКА МАТЕРИАЛОВ, Том 44, № 3, 2020, стр. 316-323.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Author

Bolshakov, Alexey D. ; Berdnikov, Yu.S. ; Sibirev, Nickolay V. ; Fedorov, Vladimir ; Shtrom, Igor V. . / Control of (Al,Ga)P Composition in Self-Catalyzed Nanowire Growth. в: ФИЗИКА И МЕХАНИКА МАТЕРИАЛОВ. 2020 ; Том 44, № 3. стр. 316-323.

BibTeX

@article{ecac396f202d48baa078b7da9882d78a,

title = "Control of (Al,Ga)P Composition in Self-Catalyzed Nanowire Growth",

abstract = "Composition of ternary III-V nanowires became a subject of recent intensive studies inspired by several optoelectronic applications. Among these nanostructures, phosphide nanowires possess a wider bandgap making it especially promising for applications operating in the green visible range. However, unlike other III-V materials, the growth of AlGaP nanowires remains rather unexplored. In this work, we model the stationary composition of self-catalyzed AlGaP grown by molecular beam epitaxy. We show that under a wide range of growth parameters our theoretical approach does not require any fitting parameter and thus allows direct interpretation of experimental data. The obtained numerical results demonstrate a tendency to Al domination over Ga at rather low fluxes of the first. Interesting phenomena of the rise of Al fraction with an increase of the total group III flux is demonstrated. On the other hand, high tolerance of the chemical composition to the temperature, concentration of phosphorus in the droplet, and adatom kinetics is shown numerically.",

keywords = "gallium arsenide phosphide, ternary nanowire, composition modeling, Composition modeling, Gallium arsenide phosphide, Ternary nanowire, HETEROSTRUCTURES, GA ADATOMS",

author = "Bolshakov, {Alexey D.} and Yu.S. Berdnikov and Sibirev, {Nickolay V.} and Vladimir Fedorov and Shtrom, {Igor V.}",

note = "Publisher Copyright: {\textcopyright} 2020, Peter the Great St. Petersburg Polytechnic University",

year = "2020",

doi = "10.18720/MPM.4432020_4",

language = "English",

volume = "44",

pages = "316--323",

journal = "ФИЗИКА И МЕХАНИКА МАТЕРИАЛОВ",

issn = "1605-8119",

publisher = "Институт проблем машиноведения РАН",

number = "3",

}

RIS

TY - JOUR

T1 - Control of (Al,Ga)P Composition in Self-Catalyzed Nanowire Growth

AU - Bolshakov, Alexey D.

AU - Berdnikov, Yu.S.

AU - Sibirev, Nickolay V.

AU - Fedorov, Vladimir

AU - Shtrom, Igor V.

PY - 2020

Y1 - 2020

N2 - Composition of ternary III-V nanowires became a subject of recent intensive studies inspired by several optoelectronic applications. Among these nanostructures, phosphide nanowires possess a wider bandgap making it especially promising for applications operating in the green visible range. However, unlike other III-V materials, the growth of AlGaP nanowires remains rather unexplored. In this work, we model the stationary composition of self-catalyzed AlGaP grown by molecular beam epitaxy. We show that under a wide range of growth parameters our theoretical approach does not require any fitting parameter and thus allows direct interpretation of experimental data. The obtained numerical results demonstrate a tendency to Al domination over Ga at rather low fluxes of the first. Interesting phenomena of the rise of Al fraction with an increase of the total group III flux is demonstrated. On the other hand, high tolerance of the chemical composition to the temperature, concentration of phosphorus in the droplet, and adatom kinetics is shown numerically.

AB - Composition of ternary III-V nanowires became a subject of recent intensive studies inspired by several optoelectronic applications. Among these nanostructures, phosphide nanowires possess a wider bandgap making it especially promising for applications operating in the green visible range. However, unlike other III-V materials, the growth of AlGaP nanowires remains rather unexplored. In this work, we model the stationary composition of self-catalyzed AlGaP grown by molecular beam epitaxy. We show that under a wide range of growth parameters our theoretical approach does not require any fitting parameter and thus allows direct interpretation of experimental data. The obtained numerical results demonstrate a tendency to Al domination over Ga at rather low fluxes of the first. Interesting phenomena of the rise of Al fraction with an increase of the total group III flux is demonstrated. On the other hand, high tolerance of the chemical composition to the temperature, concentration of phosphorus in the droplet, and adatom kinetics is shown numerically.

KW - gallium arsenide phosphide

KW - ternary nanowire

KW - composition modeling

KW - Composition modeling

KW - Gallium arsenide phosphide

KW - Ternary nanowire

KW - HETEROSTRUCTURES

KW - GA ADATOMS

UR - http://www.scopus.com/inward/record.url?scp=85096751345&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/8d9e5b24-c30d-386d-a723-35993454cbf1/

U2 - 10.18720/MPM.4432020_4

DO - 10.18720/MPM.4432020_4

M3 - Article

VL - 44

SP - 316

EP - 323

JO - ФИЗИКА И МЕХАНИКА МАТЕРИАЛОВ

JF - ФИЗИКА И МЕХАНИКА МАТЕРИАЛОВ

SN - 1605-8119

IS - 3

ER -

ID: 70874725

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