Comprehensive model toward optimization of SAG In-rich InGaN nanorods by hydride vapor phase epitaxy

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Comprehensive model toward optimization of SAG In-rich InGaN nanorods by hydride vapor phase epitaxy. / Hijazi, Hadi; Zeghouane, Mohammed; Jridi, Jihen; Gil, Evelyne; Castelluci, Dominique; Dubrovskii, Vladimir G.; Bougerol, Catherine; Andre, Yamina; Trassoudaine, Agnes.

в: Nanotechnology, Том 32, № 15, 155601, 09.04.2021.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Author

Hijazi, Hadi ; Zeghouane, Mohammed ; Jridi, Jihen ; Gil, Evelyne ; Castelluci, Dominique ; Dubrovskii, Vladimir G. ; Bougerol, Catherine ; Andre, Yamina ; Trassoudaine, Agnes. / Comprehensive model toward optimization of SAG In-rich InGaN nanorods by hydride vapor phase epitaxy. в: Nanotechnology. 2021 ; Том 32, № 15.

BibTeX

@article{98470131e8b04b5788caa0f816efb186,

title = "Comprehensive model toward optimization of SAG In-rich InGaN nanorods by hydride vapor phase epitaxy",

abstract = "Controlled growth of In-rich InGaN nanowires/nanorods (NRs) has long been considered as a very challenging task. Here, we present the first attempt to fabricate InGaN NRs by selective area growth using hydride vapor phase epitaxy. It is shown that InGaN NRs with different indium contents up to 90% can be grown by varying the In/Ga flow ratio. Furthermore, nanowires are observed on the surface of the grown NRs with a density that is proportional to the Ga content. The impact of varying the NH3 partial pressure is investigated to suppress the growth of these nanowires. It is shown that the nanowire density is considerably reduced by increasing the NH3 content in the vapor phase. We attribute the emergence of the nanowires to the final step of growth occurring after stopping the NH3 flow and cooling down the substrate. This is supported by a theoretical model based on the calculation of the supersaturation of the ternary InGaN alloy in interaction with the vapor phase as a function of different parameters assessed at the end of growth. It is shown that the decomposition of the InGaN solid alloy indeed becomes favorable below a critical value of the NH3 partial pressure. The time needed to reach this value increases with increasing the input flow of NH3, and therefore the alloy decomposition leading to the formation of nanowires becomes less effective. These results should be useful for fundamental understanding of the growth of InGaN nanostructures and may help to control their morphology and chemical composition required for device applications. ",

keywords = "HVPE, InGaN nanorods, Model, Selective area growth, LIGHT-EMITTING-DIODES, GAN, HETEROSTRUCTURES, GROWTH, model, selective area growth, NANOWIRES",

author = "Hadi Hijazi and Mohammed Zeghouane and Jihen Jridi and Evelyne Gil and Dominique Castelluci and Dubrovskii, {Vladimir G.} and Catherine Bougerol and Yamina Andre and Agnes Trassoudaine",

note = "Publisher Copyright: {\textcopyright} 2021 IOP Publishing Ltd.",

year = "2021",

month = apr,

day = "9",

doi = "10.1088/1361-6528/abdb16",

language = "English",

volume = "32",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "15",

}

RIS

TY - JOUR

T1 - Comprehensive model toward optimization of SAG In-rich InGaN nanorods by hydride vapor phase epitaxy

AU - Hijazi, Hadi

AU - Zeghouane, Mohammed

AU - Jridi, Jihen

AU - Gil, Evelyne

AU - Castelluci, Dominique

AU - Dubrovskii, Vladimir G.

AU - Bougerol, Catherine

AU - Andre, Yamina

AU - Trassoudaine, Agnes

PY - 2021/4/9

Y1 - 2021/4/9

N2 - Controlled growth of In-rich InGaN nanowires/nanorods (NRs) has long been considered as a very challenging task. Here, we present the first attempt to fabricate InGaN NRs by selective area growth using hydride vapor phase epitaxy. It is shown that InGaN NRs with different indium contents up to 90% can be grown by varying the In/Ga flow ratio. Furthermore, nanowires are observed on the surface of the grown NRs with a density that is proportional to the Ga content. The impact of varying the NH3 partial pressure is investigated to suppress the growth of these nanowires. It is shown that the nanowire density is considerably reduced by increasing the NH3 content in the vapor phase. We attribute the emergence of the nanowires to the final step of growth occurring after stopping the NH3 flow and cooling down the substrate. This is supported by a theoretical model based on the calculation of the supersaturation of the ternary InGaN alloy in interaction with the vapor phase as a function of different parameters assessed at the end of growth. It is shown that the decomposition of the InGaN solid alloy indeed becomes favorable below a critical value of the NH3 partial pressure. The time needed to reach this value increases with increasing the input flow of NH3, and therefore the alloy decomposition leading to the formation of nanowires becomes less effective. These results should be useful for fundamental understanding of the growth of InGaN nanostructures and may help to control their morphology and chemical composition required for device applications.

AB - Controlled growth of In-rich InGaN nanowires/nanorods (NRs) has long been considered as a very challenging task. Here, we present the first attempt to fabricate InGaN NRs by selective area growth using hydride vapor phase epitaxy. It is shown that InGaN NRs with different indium contents up to 90% can be grown by varying the In/Ga flow ratio. Furthermore, nanowires are observed on the surface of the grown NRs with a density that is proportional to the Ga content. The impact of varying the NH3 partial pressure is investigated to suppress the growth of these nanowires. It is shown that the nanowire density is considerably reduced by increasing the NH3 content in the vapor phase. We attribute the emergence of the nanowires to the final step of growth occurring after stopping the NH3 flow and cooling down the substrate. This is supported by a theoretical model based on the calculation of the supersaturation of the ternary InGaN alloy in interaction with the vapor phase as a function of different parameters assessed at the end of growth. It is shown that the decomposition of the InGaN solid alloy indeed becomes favorable below a critical value of the NH3 partial pressure. The time needed to reach this value increases with increasing the input flow of NH3, and therefore the alloy decomposition leading to the formation of nanowires becomes less effective. These results should be useful for fundamental understanding of the growth of InGaN nanostructures and may help to control their morphology and chemical composition required for device applications.

KW - HVPE

KW - InGaN nanorods

KW - Model

KW - Selective area growth

KW - LIGHT-EMITTING-DIODES

KW - GAN

KW - HETEROSTRUCTURES

KW - GROWTH

KW - model

KW - selective area growth

KW - NANOWIRES

UR - http://www.scopus.com/inward/record.url?scp=85101441375&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/56dcdc5f-8b9a-318e-9424-ccc0a4e973cd/

U2 - 10.1088/1361-6528/abdb16

DO - 10.1088/1361-6528/abdb16

M3 - Article

C2 - 33434893

AN - SCOPUS:85101441375

VL - 32

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 15

M1 - 155601

ER -

ID: 88771261