Comparative study of nanostructured ultra-thin AlGaN/GaN heterostructures grown on hybrid compliant SiC/porSi substrates by molecular beam epitaxy with plasma nitrogen activation

Standard

Comparative study of nanostructured ultra-thin AlGaN/GaN heterostructures grown on hybrid compliant SiC/porSi substrates by molecular beam epitaxy with plasma nitrogen activation. / Seredin, P. V.; Goloshchapov, Dmitry; Radam, Ali Obaid; Lenshin, A. S.; Builov, N. S.; Mizerov, A. M.; Kasatkin, I. A.

в: Optical Materials, Том 128, 112346, 01.06.2022.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

BibTeX

@article{76b2710d6eb24c2fa187413c3c529cd5,

title = "Comparative study of nanostructured ultra-thin AlGaN/GaN heterostructures grown on hybrid compliant SiC/porSi substrates by molecular beam epitaxy with plasma nitrogen activation",

abstract = "This study demonstrates the advantages of using a hybrid compliant substrate containing a porous silicon (porSi) layer, obtained through electrochemical etching of the original silicon substrate, and a silicon carbide (SiC) layer, formed on its surface through the Kukushkin method, to grow high-quality, ultra-thin nanostructured AlхGa1-xN/GaN heterostructures with nanocolumnar morphology by molecular beam epitaxy with plasma-activated nitrogen. Comparison of our experimental results with information from prior literature illustrates that the use of such a hybrid SiC/porSi substrate has a number of undeniable advantages for the growth of ultra-thin AlхGa1-xN/GaN nanoheterostructures without the use of thick AIIIN buffer layers. Direct growth on a hybrid compliant substrate and SiC/porSi leads to a substantial relaxation of elastic stresses between the epitaxial film, porous silicon, and silicon carbide; this consequently affects the structural quality and optical characteristics of AIIIN nitride-based transistor ultra-thin structures. The experimental and computational data obtained in our research are important for understanding the physics and technology of AlхGa1-xN/GaN nanoheterostructures, and they will contribute to their potential applications in optoelectronics.",

author = "Seredin, {P. V.} and Dmitry Goloshchapov and Radam, {Ali Obaid} and Lenshin, {A. S.} and Builov, {N. S.} and Mizerov, {A. M.} and Kasatkin, {I. A.}",

note = "Publisher Copyright: {\textcopyright} 2022 Elsevier B.V.",

year = "2022",

month = jun,

day = "1",

doi = "10.1016/j.optmat.2022.112346",

language = "English",

volume = "128",

journal = "Optical Materials",

issn = "0925-3467",

publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Comparative study of nanostructured ultra-thin AlGaN/GaN heterostructures grown on hybrid compliant SiC/porSi substrates by molecular beam epitaxy with plasma nitrogen activation

AU - Seredin, P. V.

AU - Goloshchapov, Dmitry

AU - Radam, Ali Obaid

AU - Lenshin, A. S.

AU - Builov, N. S.

AU - Mizerov, A. M.

AU - Kasatkin, I. A.

PY - 2022/6/1

Y1 - 2022/6/1

N2 - This study demonstrates the advantages of using a hybrid compliant substrate containing a porous silicon (porSi) layer, obtained through electrochemical etching of the original silicon substrate, and a silicon carbide (SiC) layer, formed on its surface through the Kukushkin method, to grow high-quality, ultra-thin nanostructured AlхGa1-xN/GaN heterostructures with nanocolumnar morphology by molecular beam epitaxy with plasma-activated nitrogen. Comparison of our experimental results with information from prior literature illustrates that the use of such a hybrid SiC/porSi substrate has a number of undeniable advantages for the growth of ultra-thin AlхGa1-xN/GaN nanoheterostructures without the use of thick AIIIN buffer layers. Direct growth on a hybrid compliant substrate and SiC/porSi leads to a substantial relaxation of elastic stresses between the epitaxial film, porous silicon, and silicon carbide; this consequently affects the structural quality and optical characteristics of AIIIN nitride-based transistor ultra-thin structures. The experimental and computational data obtained in our research are important for understanding the physics and technology of AlхGa1-xN/GaN nanoheterostructures, and they will contribute to their potential applications in optoelectronics.

AB - This study demonstrates the advantages of using a hybrid compliant substrate containing a porous silicon (porSi) layer, obtained through electrochemical etching of the original silicon substrate, and a silicon carbide (SiC) layer, formed on its surface through the Kukushkin method, to grow high-quality, ultra-thin nanostructured AlхGa1-xN/GaN heterostructures with nanocolumnar morphology by molecular beam epitaxy with plasma-activated nitrogen. Comparison of our experimental results with information from prior literature illustrates that the use of such a hybrid SiC/porSi substrate has a number of undeniable advantages for the growth of ultra-thin AlхGa1-xN/GaN nanoheterostructures without the use of thick AIIIN buffer layers. Direct growth on a hybrid compliant substrate and SiC/porSi leads to a substantial relaxation of elastic stresses between the epitaxial film, porous silicon, and silicon carbide; this consequently affects the structural quality and optical characteristics of AIIIN nitride-based transistor ultra-thin structures. The experimental and computational data obtained in our research are important for understanding the physics and technology of AlхGa1-xN/GaN nanoheterostructures, and they will contribute to their potential applications in optoelectronics.

UR - http://www.scopus.com/inward/record.url?scp=85129060547&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/c677d061-93a1-38de-97a4-f762b33ff471/

U2 - 10.1016/j.optmat.2022.112346

DO - 10.1016/j.optmat.2022.112346

M3 - Article

AN - SCOPUS:85129060547

VL - 128

JO - Optical Materials

JF - Optical Materials

SN - 0925-3467

M1 - 112346

ER -

ID: 97105982