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Combined DLTS/MCTS investigations of deep electrical levels of regular dislocation networks in silicon. / Trushin, M.; Varlamov, A.; Loshachenko, A.; Vyvenko, O.; Kittler, M.

в: Journal of Physics: Conference Series, Том 1190, № 1, 012005, 23.05.2019.

Результаты исследований: Научные публикации в периодических изданиях › статья в журнале по материалам конференции › Рецензирование

Harvard

Trushin, M, Varlamov, A, Loshachenko, A, Vyvenko, O & Kittler, M 2019, 'Combined DLTS/MCTS investigations of deep electrical levels of regular dislocation networks in silicon', Journal of Physics: Conference Series, Том. 1190, № 1, 012005. https://doi.org/10.1088/1742-6596/1190/1/012005

APA

Trushin, M., Varlamov, A., Loshachenko, A., Vyvenko, O., & Kittler, M. (2019). Combined DLTS/MCTS investigations of deep electrical levels of regular dislocation networks in silicon. Journal of Physics: Conference Series, 1190(1), [012005]. https://doi.org/10.1088/1742-6596/1190/1/012005

Vancouver

Trushin M, Varlamov A, Loshachenko A, Vyvenko O, Kittler M. Combined DLTS/MCTS investigations of deep electrical levels of regular dislocation networks in silicon. Journal of Physics: Conference Series. 2019 Май 23;1190(1). 012005. https://doi.org/10.1088/1742-6596/1190/1/012005

Author

Trushin, M. ; Varlamov, A. ; Loshachenko, A. ; Vyvenko, O. ; Kittler, M. / Combined DLTS/MCTS investigations of deep electrical levels of regular dislocation networks in silicon. в: Journal of Physics: Conference Series. 2019 ; Том 1190, № 1.

BibTeX

@article{17be86b0726847b9a67dcf5dcf2ae5ef,
title = "Combined DLTS/MCTS investigations of deep electrical levels of regular dislocation networks in silicon",
abstract = "Local electronic states of regular dislocation networks produced by n- and p-type silicon wafer bonding with different screw dislocation density were studied with deep-level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS). A drastic sadden changes of the electric level spectrum with increasing of dislocation density from two shallow bands located near the edges of valence and conduction bands towards two deep bands with energy positions about Ec - (0.22-0.26) eV and Ev + (0.4-0.53) eV were found. The origin of the electric level spectrum changes is ascribed to the changes of dislocation core structure from dissociated to perfect ones that occur when interdislocation distances became comparable with the dislocation equilibrium dissociation width. The obtained results correlate well with the results of recent studies of recombination activity of grain boundaries in mc-Si.",
keywords = "TRANSIENT SPECTROSCOPY, GRAIN-BOUNDARIES, STATES, DEFECTS",
author = "M. Trushin and A. Varlamov and A. Loshachenko and O. Vyvenko and M. Kittler",
year = "2019",
month = may,
day = "23",
doi = "10.1088/1742-6596/1190/1/012005",
language = "English",
volume = "1190",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",
note = "19th International Conference on Extended Defects in Semiconductors, EDS 2018 ; Conference date: 24-06-2018 Through 29-06-2018",

}

RIS

TY - JOUR

T1 - Combined DLTS/MCTS investigations of deep electrical levels of regular dislocation networks in silicon

AU - Trushin, M.

AU - Varlamov, A.

AU - Loshachenko, A.

AU - Vyvenko, O.

AU - Kittler, M.

PY - 2019/5/23

Y1 - 2019/5/23

N2 - Local electronic states of regular dislocation networks produced by n- and p-type silicon wafer bonding with different screw dislocation density were studied with deep-level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS). A drastic sadden changes of the electric level spectrum with increasing of dislocation density from two shallow bands located near the edges of valence and conduction bands towards two deep bands with energy positions about Ec - (0.22-0.26) eV and Ev + (0.4-0.53) eV were found. The origin of the electric level spectrum changes is ascribed to the changes of dislocation core structure from dissociated to perfect ones that occur when interdislocation distances became comparable with the dislocation equilibrium dissociation width. The obtained results correlate well with the results of recent studies of recombination activity of grain boundaries in mc-Si.

AB - Local electronic states of regular dislocation networks produced by n- and p-type silicon wafer bonding with different screw dislocation density were studied with deep-level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS). A drastic sadden changes of the electric level spectrum with increasing of dislocation density from two shallow bands located near the edges of valence and conduction bands towards two deep bands with energy positions about Ec - (0.22-0.26) eV and Ev + (0.4-0.53) eV were found. The origin of the electric level spectrum changes is ascribed to the changes of dislocation core structure from dissociated to perfect ones that occur when interdislocation distances became comparable with the dislocation equilibrium dissociation width. The obtained results correlate well with the results of recent studies of recombination activity of grain boundaries in mc-Si.

KW - TRANSIENT SPECTROSCOPY

KW - GRAIN-BOUNDARIES

KW - STATES

KW - DEFECTS

UR - http://www.scopus.com/inward/record.url?scp=85067076050&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1190/1/012005

DO - 10.1088/1742-6596/1190/1/012005

M3 - Conference article

AN - SCOPUS:85067076050

VL - 1190

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012005

T2 - 19th International Conference on Extended Defects in Semiconductors, EDS 2018

Y2 - 24 June 2018 through 29 June 2018

ER -

ID: 43711670