Standard

Charge-controlled fixation of DNA molecules on silicon surface and electro-physical properties of Au–DNA–Si interface. / Bazlov, N.V.; Vyvenko, O.F.; Sokolov, P.A.; Kas'Yanenko, N.A.; Petrov, Y.V.

в: Applied Surface Science, Том 267, 2013, стр. 224-228.

Результаты исследований: Научные публикации в периодических изданиях › статья

Harvard

Bazlov, NV, Vyvenko, OF, Sokolov, PA, Kas'Yanenko, NA & Petrov, YV 2013, 'Charge-controlled fixation of DNA molecules on silicon surface and electro-physical properties of Au–DNA–Si interface', Applied Surface Science, Том. 267, стр. 224-228. https://doi.org/10.1016/j.apsusc.2012.11.002

APA

Bazlov, N. V., Vyvenko, O. F., Sokolov, P. A., Kas'Yanenko, N. A., & Petrov, Y. V. (2013). Charge-controlled fixation of DNA molecules on silicon surface and electro-physical properties of Au–DNA–Si interface. Applied Surface Science, 267, 224-228. https://doi.org/10.1016/j.apsusc.2012.11.002

Vancouver

Bazlov NV, Vyvenko OF, Sokolov PA, Kas'Yanenko NA, Petrov YV. Charge-controlled fixation of DNA molecules on silicon surface and electro-physical properties of Au–DNA–Si interface. Applied Surface Science. 2013;267:224-228. https://doi.org/10.1016/j.apsusc.2012.11.002

Author

Bazlov, N.V. ; Vyvenko, O.F. ; Sokolov, P.A. ; Kas'Yanenko, N.A. ; Petrov, Y.V. / Charge-controlled fixation of DNA molecules on silicon surface and electro-physical properties of Au–DNA–Si interface. в: Applied Surface Science. 2013 ; Том 267. стр. 224-228.

BibTeX

@article{090dea10f79445dd8c9f55c6ca660319,
title = "Charge-controlled fixation of DNA molecules on silicon surface and electro-physical properties of Au–DNA–Si interface",
abstract = "Light-induced fixation of DNA molecules on silicon surface was done and electro-physical properties of Schottky diodes with DNA on interfaces were investigated. Thymus DNA molecules were deposited on silicon from a water solution. Fixed molecular structures were observed with helium ionic microscopy and atomic force microscopy and then they were covered with thermal sputtered gold film. Obtained structures Au–DNA–(n-Si) were examined with current–voltage and frequency dependent admittance measurements. In darkness immobilizing of molecules leaded to form DNA ropes with thickness up to 10 nm and distances between them about 1 mkm. Fixation under illumination resulted in forming of single DNA mesh with thickness about 1 nm and cell size about 100 nm. Presence of molecular mesh on interface leaded to increasing of charge density controlled by metal Fermi level and improved diode quality. Presence of molecular ropes resulted in increasing of charge density controlled by semiconductor. From the estimation of inter",
author = "N.V. Bazlov and O.F. Vyvenko and P.A. Sokolov and N.A. Kas'Yanenko and Y.V. Petrov",
year = "2013",
doi = "10.1016/j.apsusc.2012.11.002",
language = "English",
volume = "267",
pages = "224--228",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Charge-controlled fixation of DNA molecules on silicon surface and electro-physical properties of Au–DNA–Si interface

AU - Bazlov, N.V.

AU - Vyvenko, O.F.

AU - Sokolov, P.A.

AU - Kas'Yanenko, N.A.

AU - Petrov, Y.V.

PY - 2013

Y1 - 2013

N2 - Light-induced fixation of DNA molecules on silicon surface was done and electro-physical properties of Schottky diodes with DNA on interfaces were investigated. Thymus DNA molecules were deposited on silicon from a water solution. Fixed molecular structures were observed with helium ionic microscopy and atomic force microscopy and then they were covered with thermal sputtered gold film. Obtained structures Au–DNA–(n-Si) were examined with current–voltage and frequency dependent admittance measurements. In darkness immobilizing of molecules leaded to form DNA ropes with thickness up to 10 nm and distances between them about 1 mkm. Fixation under illumination resulted in forming of single DNA mesh with thickness about 1 nm and cell size about 100 nm. Presence of molecular mesh on interface leaded to increasing of charge density controlled by metal Fermi level and improved diode quality. Presence of molecular ropes resulted in increasing of charge density controlled by semiconductor. From the estimation of inter

AB - Light-induced fixation of DNA molecules on silicon surface was done and electro-physical properties of Schottky diodes with DNA on interfaces were investigated. Thymus DNA molecules were deposited on silicon from a water solution. Fixed molecular structures were observed with helium ionic microscopy and atomic force microscopy and then they were covered with thermal sputtered gold film. Obtained structures Au–DNA–(n-Si) were examined with current–voltage and frequency dependent admittance measurements. In darkness immobilizing of molecules leaded to form DNA ropes with thickness up to 10 nm and distances between them about 1 mkm. Fixation under illumination resulted in forming of single DNA mesh with thickness about 1 nm and cell size about 100 nm. Presence of molecular mesh on interface leaded to increasing of charge density controlled by metal Fermi level and improved diode quality. Presence of molecular ropes resulted in increasing of charge density controlled by semiconductor. From the estimation of inter

U2 - 10.1016/j.apsusc.2012.11.002

DO - 10.1016/j.apsusc.2012.11.002

M3 - Article

VL - 267

SP - 224

EP - 228

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -

ID: 7369019