Standard

CHARACTERIZATION OF VACANCY-RELATED DEFECTS INTRODUCED INTO SILICON DURING HEAT TREATMENT BY DEEP-LEVEL TRANSIENT SPECTROSCOPY AND GAMMA-RAY DIFFRACTION TECHNIQUES. / Sobolev, N.A.; Shek, E.I.; Kurbakov, A.I.; Rubinova, E.E.; Sokolov, A.E.

в: Applied Physics A: Materials Science and Processing, Том 62, № 3, 1996, стр. 259-262.

Результаты исследований: Научные публикации в периодических изданиях › статья

Harvard

Sobolev, NA, Shek, EI, Kurbakov, AI, Rubinova, EE & Sokolov, AE 1996, 'CHARACTERIZATION OF VACANCY-RELATED DEFECTS INTRODUCED INTO SILICON DURING HEAT TREATMENT BY DEEP-LEVEL TRANSIENT SPECTROSCOPY AND GAMMA-RAY DIFFRACTION TECHNIQUES', Applied Physics A: Materials Science and Processing, Том. 62, № 3, стр. 259-262.

APA

Sobolev, N. A., Shek, E. I., Kurbakov, A. I., Rubinova, E. E., & Sokolov, A. E. (1996). CHARACTERIZATION OF VACANCY-RELATED DEFECTS INTRODUCED INTO SILICON DURING HEAT TREATMENT BY DEEP-LEVEL TRANSIENT SPECTROSCOPY AND GAMMA-RAY DIFFRACTION TECHNIQUES. Applied Physics A: Materials Science and Processing, 62(3), 259-262.

Vancouver

Sobolev NA, Shek EI, Kurbakov AI, Rubinova EE, Sokolov AE. CHARACTERIZATION OF VACANCY-RELATED DEFECTS INTRODUCED INTO SILICON DURING HEAT TREATMENT BY DEEP-LEVEL TRANSIENT SPECTROSCOPY AND GAMMA-RAY DIFFRACTION TECHNIQUES. Applied Physics A: Materials Science and Processing. 1996;62(3):259-262.

Author

Sobolev, N.A. ; Shek, E.I. ; Kurbakov, A.I. ; Rubinova, E.E. ; Sokolov, A.E. / CHARACTERIZATION OF VACANCY-RELATED DEFECTS INTRODUCED INTO SILICON DURING HEAT TREATMENT BY DEEP-LEVEL TRANSIENT SPECTROSCOPY AND GAMMA-RAY DIFFRACTION TECHNIQUES. в: Applied Physics A: Materials Science and Processing. 1996 ; Том 62, № 3. стр. 259-262.

BibTeX

@article{8bcebcbcf00f4e3db779e6f41a33d81d,
title = "CHARACTERIZATION OF VACANCY-RELATED DEFECTS INTRODUCED INTO SILICON DURING HEAT TREATMENT BY DEEP-LEVEL TRANSIENT SPECTROSCOPY AND GAMMA-RAY DIFFRACTION TECHNIQUES",
author = "N.A. Sobolev and E.I. Shek and A.I. Kurbakov and E.E. Rubinova and A.E. Sokolov",
year = "1996",
language = "English",
volume = "62",
pages = "259--262",
journal = "Applied Physics A: Materials Science and Processing",
issn = "0947-8396",
publisher = "Springer Nature",
number = "3",

}

RIS

TY - JOUR

T1 - CHARACTERIZATION OF VACANCY-RELATED DEFECTS INTRODUCED INTO SILICON DURING HEAT TREATMENT BY DEEP-LEVEL TRANSIENT SPECTROSCOPY AND GAMMA-RAY DIFFRACTION TECHNIQUES

AU - Sobolev, N.A.

AU - Shek, E.I.

AU - Kurbakov, A.I.

AU - Rubinova, E.E.

AU - Sokolov, A.E.

PY - 1996

Y1 - 1996

M3 - Article

VL - 62

SP - 259

EP - 262

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

SN - 0947-8396

IS - 3

ER -

ID: 5548681