Standard

Characterization of the degradation processes in Si. / Bota, S. A.; Moranta, J. R.; Baraban, A. P.; Bulavinov, V. V.; Konorov, P. P.

Materials Research Society Symposium Proceedings. ред. / Kenneth P. Rodbell; William F. Filter; Harold J. Frost; Paul S. Ho. Materials Research Society, 1993. стр. 49-54 (Materials Research Society Symposium Proceedings; Том 309).

Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › Рецензирование

Harvard

Bota, SA, Moranta, JR, Baraban, AP, Bulavinov, VV & Konorov, PP 1993, Characterization of the degradation processes in Si. в KP Rodbell, WF Filter, HJ Frost & PS Ho (ред.), Materials Research Society Symposium Proceedings. Materials Research Society Symposium Proceedings, Том. 309, Materials Research Society, стр. 49-54, Symposium on Materials Reliability in Microelectronics III, San Francisco, CA, USA, 12/04/93.

APA

Bota, S. A., Moranta, J. R., Baraban, A. P., Bulavinov, V. V., & Konorov, P. P. (1993). Characterization of the degradation processes in Si. в K. P. Rodbell, W. F. Filter, H. J. Frost, & P. S. Ho (Ред.), Materials Research Society Symposium Proceedings (стр. 49-54). (Materials Research Society Symposium Proceedings; Том 309). Materials Research Society.

Vancouver

Bota SA, Moranta JR, Baraban AP, Bulavinov VV, Konorov PP. Characterization of the degradation processes in Si. в Rodbell KP, Filter WF, Frost HJ, Ho PS, Редакторы, Materials Research Society Symposium Proceedings. Materials Research Society. 1993. стр. 49-54. (Materials Research Society Symposium Proceedings).

Author

Bota, S. A. ; Moranta, J. R. ; Baraban, A. P. ; Bulavinov, V. V. ; Konorov, P. P. / Characterization of the degradation processes in Si. Materials Research Society Symposium Proceedings. Редактор / Kenneth P. Rodbell ; William F. Filter ; Harold J. Frost ; Paul S. Ho. Materials Research Society, 1993. стр. 49-54 (Materials Research Society Symposium Proceedings).

BibTeX

@inproceedings{27557c3904cb48a48ba0680f2d714325,
title = "Characterization of the degradation processes in Si",
abstract = "A non destructive method to characterize the properties of SiO2 films in SiO2-Si structures and analyze their variations under different external actions is presented and discussed. The characterization of hole traps, electron traps and defect precursors states in SiO2 films are carried out as well as their evolution and influence on the SiO2-Si structure degradation behavior. Results measured on SiO2-Si structures obtained from different technological processes and submitted to different treatments are reported in order to discuss the possibilities of this method as a power tool to assess the stability and quality of insulating layer on semiconductors.",
author = "Bota, {S. A.} and Moranta, {J. R.} and Baraban, {A. P.} and Bulavinov, {V. V.} and Konorov, {P. P.}",
year = "1993",
month = jan,
day = "1",
language = "English",
isbn = "1558992057",
series = "Materials Research Society Symposium Proceedings",
publisher = "Materials Research Society",
pages = "49--54",
editor = "Rodbell, {Kenneth P.} and Filter, {William F.} and Frost, {Harold J.} and Ho, {Paul S.}",
booktitle = "Materials Research Society Symposium Proceedings",
address = "United States",
note = "Symposium on Materials Reliability in Microelectronics III ; Conference date: 12-04-1993 Through 15-04-1993",

}

RIS

TY - GEN

T1 - Characterization of the degradation processes in Si

AU - Bota, S. A.

AU - Moranta, J. R.

AU - Baraban, A. P.

AU - Bulavinov, V. V.

AU - Konorov, P. P.

PY - 1993/1/1

Y1 - 1993/1/1

N2 - A non destructive method to characterize the properties of SiO2 films in SiO2-Si structures and analyze their variations under different external actions is presented and discussed. The characterization of hole traps, electron traps and defect precursors states in SiO2 films are carried out as well as their evolution and influence on the SiO2-Si structure degradation behavior. Results measured on SiO2-Si structures obtained from different technological processes and submitted to different treatments are reported in order to discuss the possibilities of this method as a power tool to assess the stability and quality of insulating layer on semiconductors.

AB - A non destructive method to characterize the properties of SiO2 films in SiO2-Si structures and analyze their variations under different external actions is presented and discussed. The characterization of hole traps, electron traps and defect precursors states in SiO2 films are carried out as well as their evolution and influence on the SiO2-Si structure degradation behavior. Results measured on SiO2-Si structures obtained from different technological processes and submitted to different treatments are reported in order to discuss the possibilities of this method as a power tool to assess the stability and quality of insulating layer on semiconductors.

UR - http://www.scopus.com/inward/record.url?scp=0027915059&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0027915059

SN - 1558992057

T3 - Materials Research Society Symposium Proceedings

SP - 49

EP - 54

BT - Materials Research Society Symposium Proceedings

A2 - Rodbell, Kenneth P.

A2 - Filter, William F.

A2 - Frost, Harold J.

A2 - Ho, Paul S.

PB - Materials Research Society

T2 - Symposium on Materials Reliability in Microelectronics III

Y2 - 12 April 1993 through 15 April 1993

ER -

ID: 47621059