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Can pulsed laser deposition serve as an advanced technique in fabricating chemical sensors? / Schöning, M. J.; Mourzina, Yu G.; Schubert, J.; Zander, W.; Legin, A.; Vlasov, Yu G.; Lüth, H.

в: Sensors and Actuators, B: Chemical, Том 78, № 1-3, 30.08.2001, стр. 273-278.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Schöning, MJ, Mourzina, YG, Schubert, J, Zander, W, Legin, A, Vlasov, YG & Lüth, H 2001, 'Can pulsed laser deposition serve as an advanced technique in fabricating chemical sensors?', Sensors and Actuators, B: Chemical, Том. 78, № 1-3, стр. 273-278. https://doi.org/10.1016/S0925-4005(01)00825-5

APA

Schöning, M. J., Mourzina, Y. G., Schubert, J., Zander, W., Legin, A., Vlasov, Y. G., & Lüth, H. (2001). Can pulsed laser deposition serve as an advanced technique in fabricating chemical sensors? Sensors and Actuators, B: Chemical, 78(1-3), 273-278. https://doi.org/10.1016/S0925-4005(01)00825-5

Vancouver

Schöning MJ, Mourzina YG, Schubert J, Zander W, Legin A, Vlasov YG и пр. Can pulsed laser deposition serve as an advanced technique in fabricating chemical sensors? Sensors and Actuators, B: Chemical. 2001 Авг. 30;78(1-3):273-278. https://doi.org/10.1016/S0925-4005(01)00825-5

Author

Schöning, M. J. ; Mourzina, Yu G. ; Schubert, J. ; Zander, W. ; Legin, A. ; Vlasov, Yu G. ; Lüth, H. / Can pulsed laser deposition serve as an advanced technique in fabricating chemical sensors?. в: Sensors and Actuators, B: Chemical. 2001 ; Том 78, № 1-3. стр. 273-278.

BibTeX

@article{97a2667589c44940931f5f399e94fcb3,
title = "Can pulsed laser deposition serve as an advanced technique in fabricating chemical sensors?",
abstract = "The pulsed laser deposition (PLD) technique has been investigated as an alternative semiconductor-compatible fabrication technique in order to realise different thin film materials for chemical sensor applications. As two examples, Ta2O5 and Al2O3 layers on top of capacitive Si/SiO2 structures and chalcogenide glass layers on metallised Si substrates, show a nearly-Nernstian pH sensitivity of about 55-58 mV per decade and a high sensitivity towards heavy metal ions of about 25-29 and 56-60 mV per decade, respectively. The layer thickness of the sensor materials is in the nanometer range. Even multi-component systems consisting of up to five different materials can be stoichiometrically deposited. Besides the electrochemical sensor characterisation, Rutherford backscattering spectrometry (RBS), ion channelling experiments, X-ray diffractometry and transmission electron microscopy (TEM) have been performed in order to study the physical layer structure of the pulsed laser-deposited thin film materials.",
keywords = "Heavy metal determination, pH, Pulsed laser deposition technique, Silicon technology, Thin film sensor",
author = "Sch{\"o}ning, {M. J.} and Mourzina, {Yu G.} and J. Schubert and W. Zander and A. Legin and Vlasov, {Yu G.} and H. L{\"u}th",
year = "2001",
month = aug,
day = "30",
doi = "10.1016/S0925-4005(01)00825-5",
language = "English",
volume = "78",
pages = "273--278",
journal = "Sensors and Actuators, B: Chemical",
issn = "0925-4005",
publisher = "Elsevier",
number = "1-3",

}

RIS

TY - JOUR

T1 - Can pulsed laser deposition serve as an advanced technique in fabricating chemical sensors?

AU - Schöning, M. J.

AU - Mourzina, Yu G.

AU - Schubert, J.

AU - Zander, W.

AU - Legin, A.

AU - Vlasov, Yu G.

AU - Lüth, H.

PY - 2001/8/30

Y1 - 2001/8/30

N2 - The pulsed laser deposition (PLD) technique has been investigated as an alternative semiconductor-compatible fabrication technique in order to realise different thin film materials for chemical sensor applications. As two examples, Ta2O5 and Al2O3 layers on top of capacitive Si/SiO2 structures and chalcogenide glass layers on metallised Si substrates, show a nearly-Nernstian pH sensitivity of about 55-58 mV per decade and a high sensitivity towards heavy metal ions of about 25-29 and 56-60 mV per decade, respectively. The layer thickness of the sensor materials is in the nanometer range. Even multi-component systems consisting of up to five different materials can be stoichiometrically deposited. Besides the electrochemical sensor characterisation, Rutherford backscattering spectrometry (RBS), ion channelling experiments, X-ray diffractometry and transmission electron microscopy (TEM) have been performed in order to study the physical layer structure of the pulsed laser-deposited thin film materials.

AB - The pulsed laser deposition (PLD) technique has been investigated as an alternative semiconductor-compatible fabrication technique in order to realise different thin film materials for chemical sensor applications. As two examples, Ta2O5 and Al2O3 layers on top of capacitive Si/SiO2 structures and chalcogenide glass layers on metallised Si substrates, show a nearly-Nernstian pH sensitivity of about 55-58 mV per decade and a high sensitivity towards heavy metal ions of about 25-29 and 56-60 mV per decade, respectively. The layer thickness of the sensor materials is in the nanometer range. Even multi-component systems consisting of up to five different materials can be stoichiometrically deposited. Besides the electrochemical sensor characterisation, Rutherford backscattering spectrometry (RBS), ion channelling experiments, X-ray diffractometry and transmission electron microscopy (TEM) have been performed in order to study the physical layer structure of the pulsed laser-deposited thin film materials.

KW - Heavy metal determination

KW - pH

KW - Pulsed laser deposition technique

KW - Silicon technology

KW - Thin film sensor

UR - http://www.scopus.com/inward/record.url?scp=0035975029&partnerID=8YFLogxK

U2 - 10.1016/S0925-4005(01)00825-5

DO - 10.1016/S0925-4005(01)00825-5

M3 - Article

AN - SCOPUS:0035975029

VL - 78

SP - 273

EP - 278

JO - Sensors and Actuators, B: Chemical

JF - Sensors and Actuators, B: Chemical

SN - 0925-4005

IS - 1-3

ER -

ID: 30515877