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Baric properties of InAs quantum dots. / Novikov, BV; Zegrya, GG; Peleshchak, RM; Dan'kiv, OO; Gaisin, VA; Talalaev, VG; Shtrom, IV; Cirlin, GE.
в:
Semiconductors, Том 42, № 9, 2008, стр. 1076-1083.
Результаты исследований: Научные публикации в периодических изданиях › статья
Harvard
Novikov, BV, Zegrya, GG, Peleshchak, RM, Dan'kiv, OO, Gaisin, VA, Talalaev, VG, Shtrom, IV & Cirlin, GE 2008, '
Baric properties of InAs quantum dots',
Semiconductors, Том. 42, № 9, стр. 1076-1083.
APA
Novikov, BV., Zegrya, GG., Peleshchak, RM., Dan'kiv, OO., Gaisin, VA., Talalaev, VG., Shtrom, IV., & Cirlin, GE. (2008).
Baric properties of InAs quantum dots.
Semiconductors,
42(9), 1076-1083.
Vancouver
Author
BibTeX
@article{310f6bc0cf71495b82e3e32977265eb8,
title = "Baric properties of InAs quantum dots",
author = "BV Novikov and GG Zegrya and RM Peleshchak and OO Dan'kiv and VA Gaisin and VG Talalaev and IV Shtrom and GE Cirlin",
year = "2008",
language = "не определен",
volume = "42",
pages = "1076--1083",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "9",
}
RIS
TY - JOUR
T1 - Baric properties of InAs quantum dots
AU - Novikov, BV
AU - Zegrya, GG
AU - Peleshchak, RM
AU - Dan'kiv, OO
AU - Gaisin, VA
AU - Talalaev, VG
AU - Shtrom, IV
AU - Cirlin, GE
PY - 2008
Y1 - 2008
M3 - статья
VL - 42
SP - 1076
EP - 1083
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 9
ER -
