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ALD synthesis of SnSe layers and nanostructures. / Drozd, V. E.; Nikiforova, I. O.; Bogevolnov, V. B.; Yafyasov, A. M.; Filatova, E. O.; Papazoglou, D.

в: Journal of Physics D: Applied Physics, Том 42, № 12, 125306, 21.09.2009.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Drozd, VE, Nikiforova, IO, Bogevolnov, VB, Yafyasov, AM, Filatova, EO & Papazoglou, D 2009, 'ALD synthesis of SnSe layers and nanostructures', Journal of Physics D: Applied Physics, Том. 42, № 12, 125306. https://doi.org/10.1088/0022-3727/42/12/125306

APA

Drozd, V. E., Nikiforova, I. O., Bogevolnov, V. B., Yafyasov, A. M., Filatova, E. O., & Papazoglou, D. (2009). ALD synthesis of SnSe layers and nanostructures. Journal of Physics D: Applied Physics, 42(12), [125306]. https://doi.org/10.1088/0022-3727/42/12/125306

Vancouver

Drozd VE, Nikiforova IO, Bogevolnov VB, Yafyasov AM, Filatova EO, Papazoglou D. ALD synthesis of SnSe layers and nanostructures. Journal of Physics D: Applied Physics. 2009 Сент. 21;42(12). 125306. https://doi.org/10.1088/0022-3727/42/12/125306

Author

Drozd, V. E. ; Nikiforova, I. O. ; Bogevolnov, V. B. ; Yafyasov, A. M. ; Filatova, E. O. ; Papazoglou, D. / ALD synthesis of SnSe layers and nanostructures. в: Journal of Physics D: Applied Physics. 2009 ; Том 42, № 12.

BibTeX

@article{f32162719ee84815b5641b810e7c194c,
title = "ALD synthesis of SnSe layers and nanostructures",
abstract = "Growth of SnSe structures by the ALD method using Et4Sn and H2Se as precursors has been investigated. It was established that coverage occurs at a temperature above 250 °C and the morphology of the layer depends on the temperature. At 350 °C we have grown sphere-shaped particles 100-200 nm in diameter completely covering the substrate in one monolayer. For samples grown at 450 °C petal-shaped crystal islands were observed. The IR spectrum of SnSe grown at 350 °C shows a small shift (∼0.20 eV) of the room-temperature band gap energy.",
author = "Drozd, {V. E.} and Nikiforova, {I. O.} and Bogevolnov, {V. B.} and Yafyasov, {A. M.} and Filatova, {E. O.} and D. Papazoglou",
year = "2009",
month = sep,
day = "21",
doi = "10.1088/0022-3727/42/12/125306",
language = "English",
volume = "42",
journal = "Journal Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd.",
number = "12",

}

RIS

TY - JOUR

T1 - ALD synthesis of SnSe layers and nanostructures

AU - Drozd, V. E.

AU - Nikiforova, I. O.

AU - Bogevolnov, V. B.

AU - Yafyasov, A. M.

AU - Filatova, E. O.

AU - Papazoglou, D.

PY - 2009/9/21

Y1 - 2009/9/21

N2 - Growth of SnSe structures by the ALD method using Et4Sn and H2Se as precursors has been investigated. It was established that coverage occurs at a temperature above 250 °C and the morphology of the layer depends on the temperature. At 350 °C we have grown sphere-shaped particles 100-200 nm in diameter completely covering the substrate in one monolayer. For samples grown at 450 °C petal-shaped crystal islands were observed. The IR spectrum of SnSe grown at 350 °C shows a small shift (∼0.20 eV) of the room-temperature band gap energy.

AB - Growth of SnSe structures by the ALD method using Et4Sn and H2Se as precursors has been investigated. It was established that coverage occurs at a temperature above 250 °C and the morphology of the layer depends on the temperature. At 350 °C we have grown sphere-shaped particles 100-200 nm in diameter completely covering the substrate in one monolayer. For samples grown at 450 °C petal-shaped crystal islands were observed. The IR spectrum of SnSe grown at 350 °C shows a small shift (∼0.20 eV) of the room-temperature band gap energy.

UR - http://www.scopus.com/inward/record.url?scp=70349090198&partnerID=8YFLogxK

U2 - 10.1088/0022-3727/42/12/125306

DO - 10.1088/0022-3727/42/12/125306

M3 - Article

AN - SCOPUS:70349090198

VL - 42

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

SN - 0022-3727

IS - 12

M1 - 125306

ER -

ID: 42239651